GB1365281A - Manufacture of semiconductor devices - Google Patents

Manufacture of semiconductor devices

Info

Publication number
GB1365281A
GB1365281A GB186774A GB186774A GB1365281A GB 1365281 A GB1365281 A GB 1365281A GB 186774 A GB186774 A GB 186774A GB 186774 A GB186774 A GB 186774A GB 1365281 A GB1365281 A GB 1365281A
Authority
GB
United Kingdom
Prior art keywords
layer
pattern
islands
oxidation
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB186774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7010208A external-priority patent/NL7010208A/xx
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Priority claimed from GB3184371A external-priority patent/GB1363515A/en
Publication of GB1365281A publication Critical patent/GB1365281A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)

Abstract

1365281 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 7 July 1971 [10 July 1970] 01867/74 Divided out of 1363515 Heading H1K One or more highly doped buried zones 62, each of which forms a P-N junction with an underlying semi-conductor substrate 68, interrupt inversion channels which might otherwise interconnect islands such as 69 defined in a Si epitaxial layer 61 by a pattern of silicon oxide 65 which penetrates through the layer 61 to the buried zone(s) 62 and is formed by selective oxidation thereof. Each zone 62 extends across the entire bottom of at least one of the islands 69, and in a modification of the illustrated structure a single common zone 62 underlies all the islands and the intervening oxide pattern 65. The epitaxial layer 61 is preferably of the same conductivity type as the substrate 68. The zones 62 are preferably provided by predoping the substrate 68 before deposition of the layer 61. The pattern 65 may be formed by steam oxidation through a silicon nitride or an oxidenitride mask. Recesses may be etched half-way through the layer 61 prior to oxidation so that the pattern 65 finishes flush with the upper surface of layer 61, or the same result may be achieved by oxidizing initially only partly through the layer 61, etching the oxide so formed and reoxidizing to complete the pattern 65. Alternatively the pattern 65 may be allowed to project above the layer 61, or the excess oxide may be removed after oxidation. Transistors, diodes, resistors, capacitors and PNPN photo-detectors may be formed in the isolated islands 69.
GB186774A 1970-07-10 1971-07-07 Manufacture of semiconductor devices Expired GB1365281A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7010208A NL7010208A (en) 1966-10-05 1970-07-10
GB3184371A GB1363515A (en) 1970-07-10 1971-07-07 Manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
GB1365281A true GB1365281A (en) 1974-08-29

Family

ID=26261104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB186774A Expired GB1365281A (en) 1970-07-10 1971-07-07 Manufacture of semiconductor devices

Country Status (1)

Country Link
GB (1) GB1365281A (en)

Similar Documents

Publication Publication Date Title
GB1382082A (en) Methods of manufacturing semiconductor devices
GB1421212A (en) Semiconductor device manufacture
GB1208574A (en) Methods of manufacturing semiconductor devices
GB1452884A (en) Semiconductor devices
GB1338358A (en) Semiconductor devices
GB1194159A (en) Improvements relating to Integrated Circuits.
GB1206427A (en) Manufacturing semiconductor devices
GB1457139A (en) Method of manufacturing semiconductor device
GB1339095A (en) Fabrication of monolithic integrated circuits
GB1515639A (en) Integrated circuits
ES393035A1 (en) Semiconductor devices having local oxide isolation
GB1515953A (en) Semiconductor devices
GB1260977A (en) Improvements in semiconductor devices
GB1504636A (en) Monolithic compound semiconductor arrangements
GB1435670A (en) Integrated circuits
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1365281A (en) Manufacture of semiconductor devices
GB1368190A (en) Monolithic integrated circuit
GB1300033A (en) Integrated circuits
GB1315573A (en) Formation of openings in insulating layers in mos semiconductor devices
GB1099049A (en) A method of manufacturing transistors
GB1052135A (en)
GB1187611A (en) Method of manufacturing Semiconductors Device
GB1470804A (en) Method for fabrucating semiconductor devices utilizing compo site masking
GB1260567A (en) Improvements in or relating to semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years