NL251143A - - Google Patents
Info
- Publication number
- NL251143A NL251143A NL251143DA NL251143A NL 251143 A NL251143 A NL 251143A NL 251143D A NL251143D A NL 251143DA NL 251143 A NL251143 A NL 251143A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1388159 | 1959-05-04 | ||
| JP1540359 | 1959-05-16 | ||
| JP1682159 | 1959-05-28 | ||
| JP3290459 | 1959-10-20 | ||
| JP349960 | 1960-02-08 | ||
| JP350060 | 1960-02-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL251143A true NL251143A (en:Method) |
Family
ID=27547774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL251143D NL251143A (en:Method) | 1959-05-04 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3147141A (en:Method) |
| DE (1) | DE1176103B (en:Method) |
| GB (1) | GB950444A (en:Method) |
| NL (1) | NL251143A (en:Method) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL271345A (en:Method) * | 1960-11-30 | |||
| US3459152A (en) * | 1964-08-28 | 1969-08-05 | Westinghouse Electric Corp | Apparatus for epitaxially producing a layer on a substrate |
| DE2253498A1 (de) * | 1972-10-31 | 1974-05-02 | Siemens Ag | Verfahren zum herstellen von mindestens einseitig offenen hohlkoerpern aus halbleitermaterial |
| US4040848A (en) * | 1976-01-06 | 1977-08-09 | General Electric Company | Polycrystalline silicon articles containing boron by sintering |
| US4040849A (en) * | 1976-01-06 | 1977-08-09 | General Electric Company | Polycrystalline silicon articles by sintering |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| JPS53108029A (en) * | 1977-03-03 | 1978-09-20 | Komatsu Mfg Co Ltd | Method of making high purity silicon having uniform shape |
| DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
| US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
| JPS5656649U (en:Method) * | 1980-06-13 | 1981-05-16 | ||
| US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
| US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
| US4559219A (en) * | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
| JPS61101410A (ja) * | 1984-10-24 | 1986-05-20 | Hiroshi Ishizuka | 多結晶珪素の製造法及びそのための装置 |
| FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
| US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
| GB2210062A (en) * | 1987-09-19 | 1989-06-01 | Stc Plc | Chemical vapour deposition apparatus incorporating demountable filter |
| US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
| US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| DE19608885B4 (de) * | 1996-03-07 | 2006-11-16 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern |
| DE10101040A1 (de) * | 2001-01-11 | 2002-07-25 | Wacker Chemie Gmbh | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
| US7033561B2 (en) | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
| US20090191336A1 (en) * | 2008-01-30 | 2009-07-30 | Mohan Chandra | Method and apparatus for simpified startup of chemical vapor deposition of polysilicon |
| CA2721095A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| RU2503905C2 (ru) * | 2008-04-14 | 2014-01-10 | Хемлок Семикондактор Корпорейшн | Производственная установка для осаждения материала и электрод для использования в ней |
| JP5762949B2 (ja) * | 2008-04-14 | 2015-08-12 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
| JP5477145B2 (ja) * | 2009-04-28 | 2014-04-23 | 三菱マテリアル株式会社 | 多結晶シリコン反応炉 |
| KR101115697B1 (ko) | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
| US8871153B2 (en) | 2012-05-25 | 2014-10-28 | Rokstar Technologies Llc | Mechanically fluidized silicon deposition systems and methods |
| EP2907882A1 (de) * | 2014-02-14 | 2015-08-19 | Rolf Naumann | Rückgewinnung von Selten-Erd-Metallen |
| KR102525767B1 (ko) * | 2021-11-11 | 2023-04-27 | 오씨아이 주식회사 | 고순도 SiC 결정체의 제조방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA585154A (en) * | 1959-10-13 | H. Lorenz James | Preparation of mono-silane | |
| CA546346A (en) * | 1957-09-17 | M. Wilson Jack | Methods of producing silicon of high purity | |
| GB200879A (en) * | 1922-03-24 | 1923-07-24 | Philips Nv | Improvements in or relating to the manufacture of bodies from metals having a high melting-point |
| US1728814A (en) * | 1924-01-24 | 1929-09-17 | Gen Electric | Manufacture of ductile bodies from highly-refractory metals |
| US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
| US2834648A (en) * | 1953-03-25 | 1958-05-13 | Union Carbide Corp | Disproportionation of chlorosilanes employing amine-type catalysts |
| DE1042553B (de) * | 1953-09-25 | 1958-11-06 | Int Standard Electric Corp | Verfahren zur Herstellung von Silicium grosser Reinheit |
| NL113118C (en:Method) * | 1954-05-18 | 1900-01-01 | ||
| US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
| NL105573C (en:Method) * | 1955-08-25 | |||
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| US2904404A (en) * | 1957-01-09 | 1959-09-15 | Raytheon Co | Preparation of silicon |
| US2993763A (en) * | 1957-11-14 | 1961-07-25 | Plessey Co Ltd | Manufacturing process for the preparation of flakes of sintered silicon |
| US3017251A (en) * | 1958-08-19 | 1962-01-16 | Du Pont | Process for the production of silicon |
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0
- NL NL251143D patent/NL251143A/xx unknown
-
1960
- 1960-05-03 US US26581A patent/US3147141A/en not_active Expired - Lifetime
- 1960-05-03 GB GB15510/60A patent/GB950444A/en not_active Expired
- 1960-05-04 DE DEJ18072A patent/DE1176103B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3147141A (en) | 1964-09-01 |
| DE1176103B (de) | 1964-08-20 |
| GB950444A (en) | 1964-02-26 |