GB2210062A - Chemical vapour deposition apparatus incorporating demountable filter - Google Patents

Chemical vapour deposition apparatus incorporating demountable filter Download PDF

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Publication number
GB2210062A
GB2210062A GB8722081A GB8722081A GB2210062A GB 2210062 A GB2210062 A GB 2210062A GB 8722081 A GB8722081 A GB 8722081A GB 8722081 A GB8722081 A GB 8722081A GB 2210062 A GB2210062 A GB 2210062A
Authority
GB
United Kingdom
Prior art keywords
phosphorus
deposition
metal
chemical vapour
vapour deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8722081A
Other versions
GB8722081D0 (en
Inventor
Edward John Thrush
Joseph Mark Trigg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8722081A priority Critical patent/GB2210062A/en
Publication of GB8722081D0 publication Critical patent/GB8722081D0/en
Publication of GB2210062A publication Critical patent/GB2210062A/en
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

An apparatus for the chemical vapour deposition of metal/phosphorus semiconductor alloys is provided with a demountable filter 20 for the removal and subsequent disposal of excess, highly pyrophoric, white phosphorus. Filter 20 comprises a stainless steel cartridge packed with activated charcoal 21. The cartridge can be removed under nitrogen without the risk of fire and the contents rendered safe by a controlled burn-off procedure or by immersion in water. <IMAGE>

Description

SEMICONDUCTOR DEPOSITION APPARATUS This invention relates to apparatus for the MOCVD deposition (metal - organic chemical vapour deposition) of alloy semiconductors and in particular to a filter construction for the removal of reaction products in such apparatus.
The MOCVD growth of semiconductor metal/phosphorus alloys, particularly Indium Phosphide (InP)involves a number of problems. The most difficult problem is a considerable fire risk arising from the highly pyrophoric nature of the yellow phophorus byproduct. To minimise the risk, conventional deposition systems require cumbersome arrangements of air locks.
This results in difficulties in wafer handling and relatively low through put.
The object of the invention is to minimise or to overcome this disadvantage.
According to the invention there is provided an apparatus for the deposition of metal/phophorus semiconductor alloys, the apparatus including a demountable cartridge containing an absorbent material whereby, in use, phosphorus generated as a byproduct from the deposition process may be concentrated.
An embodiment of the invention will now be described with reference to the accompanying drawing in which the single figure is a schematic cross-sectional view of a MOCVD apparatus provided with a demountable cartridge filter.
Referring to the drawing, the apparatus includes a reaction chamber 11 having an inner chamber or work tube 12 in which a susceptor 13 is mounted for receiving a substrate workpiece 14. The work tube 12 has a demoutable section 12a. Hydrogen is supplied to the outer chamber 11 via inlet 15 and a mixture of Hydrogen and reactants is supplied to the inner chamber 12 via inlet tube 16. Radio frequency heating of the susceptor and workpiece is supplied via coil 17.
The system incorporates a removable stainless steel filter cartridge, generally indicated as 20, packed with activated charcoal 21. Unlike previous pipeline mounted charcoal filter assemblies there are no exposed internal surfaces between the cartridge and the removable worktube 12a to be contaminated. The charcoal is held in place by two stainless steel gauzes 22, 23 which are compressed by threaded pressure ring 24 and a set of Bellville washers (not shown). An adapter plate 25 provided with a cut-out to match the worktube 12a is used to couple the tube to the cartridge. As the demoutable section 12a of the worktube and the entire cartridge assembly can be changed om a run-to-run basis, no significant phosphorus contamination is retain between runs and the reactor is returned to a standard condition at the start of each run. The cartridge filter has been found to be extremely effective proventing the passage of phosphorus byproducts into the exhaust line 26 whilst imposing no perceptible increase in back pressure even after process runs of up to six hours in duration have been carried out. The cartridge can be removed under a Nitrogen ambient without the risk of fire and the contents rendered safe either by a controlled burn-off procedure effected by passing a Nitrogen/Oxygen mixture through it, or by immersion in water. The cartridge can then be dismantled and cleaned in Nitric acid prior to re-packing with a fresh charcoal charge.

Claims (3)

CLAIMS.
1. An apparatus for the deposition of metal/phophorus semiconductor alloys, the apparatus including a demountable cartridge containing an absorbent material whereby, in use, phosphorus generated as a byproduct from the deposition process may be concentrated.
2. An apparatus for the deposition of metal/phosphorus semiconductor alloys, the apparatus including a reaction chamber wherein, in use, chemical vapour deposition of volatile metal and phosphorus compounds is effected, and a demountable filter assembly in communication with said reaction chamber whereby excess phosphorus is removed therefrom, and wherein said filter comprises a body of activated charcoal disposed in a housing detachable from the reaction chamber and retained in said housing between first and second gauze members.
3. An apparatus for the deposition of metal/phosphorus semiconductor alloys substantially as described herein with reference to and as shown in the accompanying drawing.
GB8722081A 1987-09-19 1987-09-19 Chemical vapour deposition apparatus incorporating demountable filter Withdrawn GB2210062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8722081A GB2210062A (en) 1987-09-19 1987-09-19 Chemical vapour deposition apparatus incorporating demountable filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8722081A GB2210062A (en) 1987-09-19 1987-09-19 Chemical vapour deposition apparatus incorporating demountable filter

Publications (2)

Publication Number Publication Date
GB8722081D0 GB8722081D0 (en) 1987-10-28
GB2210062A true GB2210062A (en) 1989-06-01

Family

ID=10624060

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8722081A Withdrawn GB2210062A (en) 1987-09-19 1987-09-19 Chemical vapour deposition apparatus incorporating demountable filter

Country Status (1)

Country Link
GB (1) GB2210062A (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB247219A (en) * 1925-02-06 1927-06-07 Ig Farbenindustrie Ag Process for the production of phosphorus
GB768378A (en) * 1954-10-01 1957-02-13 Ohio Commw Eng Co Gas plating with copper acetylacetonate
GB942831A (en) * 1961-01-19 1963-11-27 Monsanto Chemicals Process for the production of purified phosphorus or sulphur
GB949952A (en) * 1960-11-28 1964-02-19 Pintsch Bamag Ag Process for the recovery of carbon disulphide and sulphur from exhaust gas
GB950444A (en) * 1959-05-04 1964-02-26 Ishizuka Hiroshi Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane
GB1096871A (en) * 1964-01-07 1967-12-29 Aquitaine Petrole Process for the recovery of gaseous sulphur compounds present in small quantities inresidual gases
GB1305508A (en) * 1970-05-18 1973-02-07
EP0068738A1 (en) * 1981-06-18 1983-01-05 Itt Industries, Inc. Metallisation plant
JPS58100671A (en) * 1981-12-11 1983-06-15 Canon Inc Plasma cvd device provided with capturing device for fine powder
GB2124924A (en) * 1982-07-14 1984-02-29 Advanced Semiconductor Mat Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
US4608063A (en) * 1983-11-25 1986-08-26 Canon Kabushiki Kaisha Exhaust system for chemical vapor deposition apparatus

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB247219A (en) * 1925-02-06 1927-06-07 Ig Farbenindustrie Ag Process for the production of phosphorus
GB768378A (en) * 1954-10-01 1957-02-13 Ohio Commw Eng Co Gas plating with copper acetylacetonate
GB950444A (en) * 1959-05-04 1964-02-26 Ishizuka Hiroshi Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane
GB949952A (en) * 1960-11-28 1964-02-19 Pintsch Bamag Ag Process for the recovery of carbon disulphide and sulphur from exhaust gas
GB942831A (en) * 1961-01-19 1963-11-27 Monsanto Chemicals Process for the production of purified phosphorus or sulphur
GB1096871A (en) * 1964-01-07 1967-12-29 Aquitaine Petrole Process for the recovery of gaseous sulphur compounds present in small quantities inresidual gases
GB1305508A (en) * 1970-05-18 1973-02-07
EP0068738A1 (en) * 1981-06-18 1983-01-05 Itt Industries, Inc. Metallisation plant
JPS58100671A (en) * 1981-12-11 1983-06-15 Canon Inc Plasma cvd device provided with capturing device for fine powder
GB2124924A (en) * 1982-07-14 1984-02-29 Advanced Semiconductor Mat Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4608063A (en) * 1983-11-25 1986-08-26 Canon Kabushiki Kaisha Exhaust system for chemical vapor deposition apparatus
US4556584A (en) * 1984-05-03 1985-12-03 Btu Engineering Corporation Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates

Also Published As

Publication number Publication date
GB8722081D0 (en) 1987-10-28

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