GB2210062A - Chemical vapour deposition apparatus incorporating demountable filter - Google Patents
Chemical vapour deposition apparatus incorporating demountable filter Download PDFInfo
- Publication number
- GB2210062A GB2210062A GB8722081A GB8722081A GB2210062A GB 2210062 A GB2210062 A GB 2210062A GB 8722081 A GB8722081 A GB 8722081A GB 8722081 A GB8722081 A GB 8722081A GB 2210062 A GB2210062 A GB 2210062A
- Authority
- GB
- United Kingdom
- Prior art keywords
- phosphorus
- deposition
- metal
- chemical vapour
- vapour deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Treating Waste Gases (AREA)
Abstract
An apparatus for the chemical vapour deposition of metal/phosphorus semiconductor alloys is provided with a demountable filter 20 for the removal and subsequent disposal of excess, highly pyrophoric, white phosphorus. Filter 20 comprises a stainless steel cartridge packed with activated charcoal 21. The cartridge can be removed under nitrogen without the risk of fire and the contents rendered safe by a controlled burn-off procedure or by immersion in water. <IMAGE>
Description
SEMICONDUCTOR DEPOSITION APPARATUS
This invention relates to apparatus for the
MOCVD deposition (metal - organic chemical vapour deposition) of alloy semiconductors and in particular to a filter construction for the removal of reaction products in such apparatus.
The MOCVD growth of semiconductor metal/phosphorus alloys, particularly Indium Phosphide (InP)involves a number of problems. The most difficult problem is a considerable fire risk arising from the highly pyrophoric nature of the yellow phophorus byproduct. To minimise the risk, conventional deposition systems require cumbersome arrangements of air locks.
This results in difficulties in wafer handling and relatively low through put.
The object of the invention is to minimise or to overcome this disadvantage.
According to the invention there is provided an apparatus for the deposition of metal/phophorus semiconductor alloys, the apparatus including a demountable cartridge containing an absorbent material whereby, in use, phosphorus generated as a byproduct from the deposition process may be concentrated.
An embodiment of the invention will now be described with reference to the accompanying drawing in which the single figure is a schematic cross-sectional view of a MOCVD apparatus provided with a demountable cartridge filter.
Referring to the drawing, the apparatus includes a reaction chamber 11 having an inner chamber or work tube 12 in which a susceptor 13 is mounted for receiving a substrate workpiece 14. The work tube 12 has a demoutable section 12a. Hydrogen is supplied to the outer chamber 11 via inlet 15 and a mixture of Hydrogen and reactants is supplied to the inner chamber 12 via inlet tube 16. Radio frequency heating of the susceptor and workpiece is supplied via coil 17.
The system incorporates a removable stainless steel filter cartridge, generally indicated as 20, packed with activated charcoal 21. Unlike previous pipeline mounted charcoal filter assemblies there are no exposed internal surfaces between the cartridge and the removable worktube 12a to be contaminated. The charcoal is held in place by two stainless steel gauzes 22, 23 which are compressed by threaded pressure ring 24 and a set of Bellville washers (not shown). An adapter plate 25 provided with a cut-out to match the worktube 12a is used to couple the tube to the cartridge. As the demoutable section 12a of the worktube and the entire cartridge assembly can be changed om a run-to-run basis, no significant phosphorus contamination is retain between runs and the reactor is returned to a standard condition at the start of each run. The cartridge filter has been found to be extremely effective proventing the passage of phosphorus byproducts into the exhaust line 26 whilst imposing no perceptible increase in back pressure even after process runs of up to six hours in duration have been carried out. The cartridge can be removed under a Nitrogen ambient without the risk of fire and the contents rendered safe either by a controlled burn-off procedure effected by passing a
Nitrogen/Oxygen mixture through it, or by immersion in water. The cartridge can then be dismantled and cleaned in Nitric acid prior to re-packing with a fresh charcoal charge.
Claims (3)
1. An apparatus for the deposition of metal/phophorus semiconductor alloys, the apparatus including a demountable cartridge containing an absorbent material whereby, in use, phosphorus generated as a byproduct from the deposition process may be concentrated.
2. An apparatus for the deposition of metal/phosphorus semiconductor alloys, the apparatus including a reaction chamber wherein, in use, chemical vapour deposition of volatile metal and phosphorus compounds is effected, and a demountable filter assembly in communication with said reaction chamber whereby excess phosphorus is removed therefrom, and wherein said filter comprises a body of activated charcoal disposed in a housing detachable from the reaction chamber and retained in said housing between first and second gauze members.
3. An apparatus for the deposition of metal/phosphorus semiconductor alloys substantially as described herein with reference to and as shown in the accompanying drawing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8722081A GB2210062A (en) | 1987-09-19 | 1987-09-19 | Chemical vapour deposition apparatus incorporating demountable filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8722081A GB2210062A (en) | 1987-09-19 | 1987-09-19 | Chemical vapour deposition apparatus incorporating demountable filter |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8722081D0 GB8722081D0 (en) | 1987-10-28 |
GB2210062A true GB2210062A (en) | 1989-06-01 |
Family
ID=10624060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8722081A Withdrawn GB2210062A (en) | 1987-09-19 | 1987-09-19 | Chemical vapour deposition apparatus incorporating demountable filter |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2210062A (en) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB247219A (en) * | 1925-02-06 | 1927-06-07 | Ig Farbenindustrie Ag | Process for the production of phosphorus |
GB768378A (en) * | 1954-10-01 | 1957-02-13 | Ohio Commw Eng Co | Gas plating with copper acetylacetonate |
GB942831A (en) * | 1961-01-19 | 1963-11-27 | Monsanto Chemicals | Process for the production of purified phosphorus or sulphur |
GB949952A (en) * | 1960-11-28 | 1964-02-19 | Pintsch Bamag Ag | Process for the recovery of carbon disulphide and sulphur from exhaust gas |
GB950444A (en) * | 1959-05-04 | 1964-02-26 | Ishizuka Hiroshi | Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane |
GB1096871A (en) * | 1964-01-07 | 1967-12-29 | Aquitaine Petrole | Process for the recovery of gaseous sulphur compounds present in small quantities inresidual gases |
GB1305508A (en) * | 1970-05-18 | 1973-02-07 | ||
EP0068738A1 (en) * | 1981-06-18 | 1983-01-05 | Itt Industries, Inc. | Metallisation plant |
JPS58100671A (en) * | 1981-12-11 | 1983-06-15 | Canon Inc | Plasma cvd device provided with capturing device for fine powder |
GB2124924A (en) * | 1982-07-14 | 1984-02-29 | Advanced Semiconductor Mat | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
US4556584A (en) * | 1984-05-03 | 1985-12-03 | Btu Engineering Corporation | Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates |
US4608063A (en) * | 1983-11-25 | 1986-08-26 | Canon Kabushiki Kaisha | Exhaust system for chemical vapor deposition apparatus |
-
1987
- 1987-09-19 GB GB8722081A patent/GB2210062A/en not_active Withdrawn
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB247219A (en) * | 1925-02-06 | 1927-06-07 | Ig Farbenindustrie Ag | Process for the production of phosphorus |
GB768378A (en) * | 1954-10-01 | 1957-02-13 | Ohio Commw Eng Co | Gas plating with copper acetylacetonate |
GB950444A (en) * | 1959-05-04 | 1964-02-26 | Ishizuka Hiroshi | Process for the manufacture of high purity metallic silicon by thermal decomposition of monosilane |
GB949952A (en) * | 1960-11-28 | 1964-02-19 | Pintsch Bamag Ag | Process for the recovery of carbon disulphide and sulphur from exhaust gas |
GB942831A (en) * | 1961-01-19 | 1963-11-27 | Monsanto Chemicals | Process for the production of purified phosphorus or sulphur |
GB1096871A (en) * | 1964-01-07 | 1967-12-29 | Aquitaine Petrole | Process for the recovery of gaseous sulphur compounds present in small quantities inresidual gases |
GB1305508A (en) * | 1970-05-18 | 1973-02-07 | ||
EP0068738A1 (en) * | 1981-06-18 | 1983-01-05 | Itt Industries, Inc. | Metallisation plant |
JPS58100671A (en) * | 1981-12-11 | 1983-06-15 | Canon Inc | Plasma cvd device provided with capturing device for fine powder |
GB2124924A (en) * | 1982-07-14 | 1984-02-29 | Advanced Semiconductor Mat | Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions |
US4608063A (en) * | 1983-11-25 | 1986-08-26 | Canon Kabushiki Kaisha | Exhaust system for chemical vapor deposition apparatus |
US4556584A (en) * | 1984-05-03 | 1985-12-03 | Btu Engineering Corporation | Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates |
Also Published As
Publication number | Publication date |
---|---|
GB8722081D0 (en) | 1987-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |