GB942831A - Process for the production of purified phosphorus or sulphur - Google Patents
Process for the production of purified phosphorus or sulphurInfo
- Publication number
- GB942831A GB942831A GB223461A GB223461A GB942831A GB 942831 A GB942831 A GB 942831A GB 223461 A GB223461 A GB 223461A GB 223461 A GB223461 A GB 223461A GB 942831 A GB942831 A GB 942831A
- Authority
- GB
- United Kingdom
- Prior art keywords
- vapour
- column
- purified
- silicon carbide
- passed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/04—Purification of phosphorus
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/02—Preparation of sulfur; Purification
- C01B17/0232—Purification, e.g. degassing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Impure phosphorus or sulphur is purified by passage of its vapour through a gas chromatographic column. The impure substance may be vaporized with an inert entraining gas e.g. Ar2He, N2 or H2 and the mixture passed through the column operated at 250-550 DEG C., e.g. at least 280 DEG C. for P, and at least 450 DEG C. for S. The column may be stainless steel, carbon, zirconium oxide, rhenium, tantalum, tungsten, silicon carbide, molybdenum, niobium, ruthenium or iridium. The stationary phase can be a liquid metal, e.g. tin, bismuth, lead, thallium or zinc, or a fused salt e.g. a nitrite, such as a mixture of potassium and sodium nitrites, supported on a packing, which can be one of the materials used for the column, or magnesia, and may be foamed or sintered to give a large surface area. The stationary phase may also be a solid, e.g. silicon carbide, aluminium, or a silica aerogel having a large surface area. The column may be heated by an electrically heated rod or winding, or by induction or resistance heating, and may have an external layer of thermal insulation, e.g. graphite, magnesia, foamed silicon carbide, or vermiculite fire-brick. The purified phosphorus vapour may be passed into indium vapour to form indium phosphide, and the purified sulphur vapour may be passed into cadmium vapour to form cadmium sulphide.ALSO:Impure phosphorus or sulphur is purified by passage of its vapour through a gas chromatographic column. The impure substance may be vaporized with an inert entraining gas e.g. Ar, He, N2 or H2 and the mixture passed through the column operated at 250-550 DEG C., e.g. at least 280 DEG C. for P and at least 450 DEG C. for S. The column may be stainless steel, carbon, zirconium oxide, rhenium, tantalum, tungsten, silicon carbide, molybdenum, niobium, ruthenium or iridium. The stationary phase can be a liquid metal, e.g. tin, bismuth, lead, thallium or zinc, or a fused salt, e.g. a nitrite, such as a mixture of potassium or sodium nitrites, supported on a packing, which can be one of the materials used for the column, or magnesia, and may be foamed or sintered to give a large surface area. The stationary phase may also be a solid, e.g. silicon carbide, aluminium, or a silica aerogel having a large surface area. The column may be heated by an electrically heated rod or winding, or by induction or resistance heating, and may have an external layer of thermal insulation, e.g. graphite, magnesia, foamed silicon carbide or vermiculite firebrick. The purified phosphorus vapour may be passed into indium vapour to form indium phosphide, and the purified suphur vapour may be passed into cadmium vapour to form cadmium sulphide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB223461A GB942831A (en) | 1961-01-19 | 1961-01-19 | Process for the production of purified phosphorus or sulphur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB223461A GB942831A (en) | 1961-01-19 | 1961-01-19 | Process for the production of purified phosphorus or sulphur |
Publications (1)
Publication Number | Publication Date |
---|---|
GB942831A true GB942831A (en) | 1963-11-27 |
Family
ID=9735961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB223461A Expired GB942831A (en) | 1961-01-19 | 1961-01-19 | Process for the production of purified phosphorus or sulphur |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB942831A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2210062A (en) * | 1987-09-19 | 1989-06-01 | Stc Plc | Chemical vapour deposition apparatus incorporating demountable filter |
CN107398547A (en) * | 2016-05-20 | 2017-11-28 | 中国科学院理化技术研究所 | Autonomic liquid metal amoeba mechanism that warp |
CN112429708A (en) * | 2020-11-24 | 2021-03-02 | 中国电子科技集团公司第十三研究所 | Method for purifying non-metal semiconductor material |
-
1961
- 1961-01-19 GB GB223461A patent/GB942831A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2210062A (en) * | 1987-09-19 | 1989-06-01 | Stc Plc | Chemical vapour deposition apparatus incorporating demountable filter |
CN107398547A (en) * | 2016-05-20 | 2017-11-28 | 中国科学院理化技术研究所 | Autonomic liquid metal amoeba mechanism that warp |
CN107398547B (en) * | 2016-05-20 | 2019-04-19 | 中国科学院理化技术研究所 | Autonomic liquid metal amoeba mechanism that warp |
CN112429708A (en) * | 2020-11-24 | 2021-03-02 | 中国电子科技集团公司第十三研究所 | Method for purifying non-metal semiconductor material |
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