BE584431A - - Google Patents

Info

Publication number
BE584431A
BE584431A BE584431DA BE584431A BE 584431 A BE584431 A BE 584431A BE 584431D A BE584431D A BE 584431DA BE 584431 A BE584431 A BE 584431A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE584431A publication Critical patent/BE584431A/xx

Links

Classifications

    • H10W72/20
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W72/00
    • H10W76/17
BE584431D 1959-02-09 BE584431A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US791934A US3059158A (en) 1959-02-09 1959-02-09 Protected semiconductor device and method of making it

Publications (1)

Publication Number Publication Date
BE584431A true BE584431A (en:Method)

Family

ID=25155270

Family Applications (1)

Application Number Title Priority Date Filing Date
BE584431D BE584431A (en:Method) 1959-02-09

Country Status (6)

Country Link
US (1) US3059158A (en:Method)
BE (1) BE584431A (en:Method)
DE (1) DE1212220B (en:Method)
FR (1) FR1247196A (en:Method)
GB (1) GB944943A (en:Method)
NL (1) NL244815A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300165B (de) * 1961-01-16 1969-07-31 Western Electric Co Mikrominiaturisierte Halbleiterdiodenanordnung

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435516A (en) * 1959-05-06 1969-04-01 Texas Instruments Inc Semiconductor structure fabrication
FR1319150A (fr) * 1961-04-05 1963-02-22 Gen Electric Perfectionnements aux dispositifs à semi-conducteurs
US3202888A (en) * 1962-02-09 1965-08-24 Hughes Aircraft Co Micro-miniature semiconductor devices
US3213337A (en) * 1962-10-02 1965-10-19 Whittaker Corp Composite ceramic body and method of forming the same
US3217088A (en) * 1962-11-30 1965-11-09 Owens Illinois Glass Co Joining glass members and encapsulation of small electrical components
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
GB1027737A (en) * 1963-05-14 1966-04-27 Nat Res Dev Semiconductor diode construction
DE1230918B (de) * 1964-05-08 1966-12-22 Telefunken Patent Halbleiteranordnung
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
DE1764096A1 (de) * 1967-04-04 1971-05-27 Marconi Co Ltd Oberflaechen-Feldeffekt-Transistor
US3648121A (en) * 1967-09-06 1972-03-07 Tokyo Shibaura Electric Co A laminated semiconductor structure
US3735208A (en) * 1971-08-26 1973-05-22 Rca Corp Thermal fatigue lead-soldered semiconductor device
US3715636A (en) * 1972-01-03 1973-02-06 Gen Electric Silicon carbide lamp mounted on a ceramic of poor thermal conductivity
JPS49135749U (en:Method) * 1973-03-24 1974-11-21
JPS52116074A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Electronic part
US4262165A (en) * 1976-03-26 1981-04-14 Hitachi, Ltd. Packaging structure for semiconductor IC chip
EP0582694B1 (en) * 1992-01-27 1998-05-20 Harris Corporation Semiconductor device with a semiconductor substrate and a ceramic plate as lid
CN109467386A (zh) * 2018-01-15 2019-03-15 杭州创屹机电科技有限公司 一种快速固化的3d打印陶瓷浆料及打印方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2874340A (en) * 1953-06-26 1959-02-17 Sprague Electric Co Rectifying contact
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
AT193945B (de) * 1955-06-28 1957-12-10 Western Electric Co Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials
DE1068816B (en:Method) * 1955-09-12 1959-11-12
NL213425A (en:Method) * 1956-01-03
NL101297C (en:Method) * 1956-06-12
US2959718A (en) * 1957-04-08 1960-11-08 Int Rectifier Corp Rectifier assembly
DE1047949B (de) * 1957-06-24 1958-12-31 Siemens Ag Insbesondere auf Strahlung ansprechende Halbleiterkristallanordnung mit p-n-UEbergang und den p-n-UEbergang gegen Feuchtigkeit schuetzender Huelle
US2946935A (en) * 1958-10-27 1960-07-26 Sarkes Tarzian Diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1300165B (de) * 1961-01-16 1969-07-31 Western Electric Co Mikrominiaturisierte Halbleiterdiodenanordnung

Also Published As

Publication number Publication date
GB944943A (en) 1963-12-18
NL244815A (en:Method)
FR1247196A (fr) 1960-11-25
DE1212220B (de) 1966-03-10
US3059158A (en) 1962-10-16

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