NL245969A - - Google Patents

Info

Publication number: NL245969A
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-11-28

Publication of NL245969A publication Critical patent/NL245969A/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Inorganic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)
Conductive Materials (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Glass Compositions (AREA)

NL245969D 1958-11-28 NL245969A (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
DES60756A DE1121225B (de)	1958-11-28	1958-11-28	Halbleiteranordnung und Verfahren zu ihrer Herstellung
DES64465A DE1121736B (de)	1958-11-28	1959-08-17	Halbleiteranordnung
DES0075092		1961-07-29
DES0075091		1961-07-29

Publications (1)

Publication Number	Publication Date
NL245969A true NL245969A (zh)

Family

ID=27437499

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
NL280217D NL280217A (zh)	1958-11-28
NL245969D NL245969A (zh)	1958-11-28
NL245568D NL245568A (zh)	1958-11-28

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
NL280217D NL280217A (zh)	1958-11-28

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
NL245568D NL245568A (zh)	1958-11-28

Country Status (6)

Country	Link
US (3)	US3140998A (zh)
CH (3)	CH411136A (zh)
DE (4)	DE1121225B (zh)
FR (2)	FR1238050A (zh)
GB (3)	GB933211A (zh)
NL (3)	NL245568A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3303005A (en) *	1962-12-03	1967-02-07	Ibm	Ternary semiconductor compounds and method of preparation
US3485757A (en) *	1964-11-23	1969-12-23	Atomic Energy Commission	Thermoelectric composition comprising doped bismuth telluride,silicon and boron
US3945855A (en) *	1965-11-24	1976-03-23	Teledyne, Inc.	Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element
US3460996A (en) *	1968-04-02	1969-08-12	Rca Corp	Thermoelectric lead telluride base compositions and devices utilizing them
SU519042A1 (ru) *	1974-05-21	1978-07-25	Предприятие П/Я М-5273	Фотоэлектрический эмиттер
US4447277A (en) *	1982-01-22	1984-05-08	Energy Conversion Devices, Inc.	Multiphase thermoelectric alloys and method of making same
US6312617B1 (en) *	1998-10-13	2001-11-06	Board Of Trustees Operating Michigan State University	Conductive isostructural compounds
CN100452466C (zh) *	2003-09-12	2009-01-14	密歇根州州立大学托管委员会	热电材料及其制备方法、热电元件以及从热能生成电流的方法
US8481843B2 (en) *	2003-09-12	2013-07-09	Board Of Trustees Operating Michigan State University	Silver-containing p-type semiconductor
CN111710775A (zh) *	2020-07-22	2020-09-25	中国科学院宁波材料技术与工程研究所	一种硒化锡基热电材料、其制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE510303A (zh) *	1951-11-16
FR1129505A (fr) *	1954-04-01	1957-01-22	Philips Nv	Procédé de fabrication de corps semi-conducteurs
US2858275A (en) *	1954-12-23	1958-10-28	Siemens Ag	Mixed-crystal semiconductor devices
AT194489B (de) *	1954-12-23	1958-01-10	Siemens Ag	Halbleitergerät
DE1044980B (de) *	1955-11-14	1958-11-27	Siemens Ag	Halbleiteranordnung mit mehreren Elektroden und Verfahren zu ihrer Herstellung
US2882195A (en) *	1957-05-10	1959-04-14	Bell Telephone Labor Inc	Semiconducting materials and devices made therefrom
US2882468A (en) *	1957-05-10	1959-04-14	Bell Telephone Labor Inc	Semiconducting materials and devices made therefrom

0
- CH CH566462A patent/CH441508A/de unknown
- NL NL280217D patent/NL280217A/xx unknown
- CH CH7995559A patent/CH441507A/de unknown
- NL NL245969D patent/NL245969A/xx unknown
- NL NL245568D patent/NL245568A/xx unknown
1958
- 1958-11-28 DE DES60756A patent/DE1121225B/de active Pending
1959
- 1959-08-17 DE DES64465A patent/DE1121736B/de active Pending
- 1959-10-07 FR FR806955A patent/FR1238050A/fr not_active Expired
- 1959-10-14 GB GB34887/59A patent/GB933211A/en not_active Expired
- 1959-10-21 CH CH7968359A patent/CH411136A/de unknown
- 1959-10-27 GB GB36426/59A patent/GB933212A/en not_active Expired
- 1959-10-29 FR FR808852A patent/FR76972E/fr not_active Expired
- 1959-11-30 US US856087A patent/US3140998A/en not_active Expired - Lifetime
1961
- 1961-07-29 DE DE19611414632 patent/DE1414632A1/de active Pending
- 1961-07-29 DE DE19611414631 patent/DE1414631B2/de active Pending
1962
- 1962-07-25 US US212411A patent/US3211656A/en not_active Expired - Lifetime
- 1962-07-25 US US212412A patent/US3211655A/en not_active Expired - Lifetime
- 1962-07-27 GB GB29005/62A patent/GB974601A/en not_active Expired

Also Published As

Publication number	Publication date
DE1414631B2 (de)	1971-07-22
US3211656A (en)	1965-10-12
US3140998A (en)	1964-07-14
FR1238050A (fr)	1960-08-05
GB974601A (en)	1964-11-04
FR76972E (fr)	1961-12-29
GB933211A (en)	1963-08-08
NL280217A (zh)
CH411136A (de)	1966-04-15
CH441507A (de)	1968-01-15
DE1121736B (de)	1962-01-11
DE1414632A1 (de)	1969-02-27
US3211655A (en)	1965-10-12
NL245568A (zh)
DE1121225B (de)	1962-01-04
GB933212A (en)	1963-08-08
CH441508A (de)	1968-01-15
DE1414631A1 (de)	1969-01-23

Publication	Publication Date	Title
DE1249715B (zh)
JPS4428940B1 (zh)	1969-11-26
JPS3510165B1 (zh)	1960-07-29
FR69551E (zh)	1958-11-10
AT217439B (zh)	1961-10-10
AT221043B (zh)	1962-04-25
AT216227B (zh)	1961-07-10
AT216612B (zh)	1961-08-10
FR535M (zh)	1961-05-23
FR1202640A (zh)	1960-01-12
AT216831B (zh)	1961-08-25
AT213631B (zh)	1961-02-27
AT217982B (zh)	1961-11-10
AT219815B (zh)	1962-02-26
AT219868B (zh)	1962-02-26
BE562866A (zh)
BE543812A (zh)
BE576475A (zh)
BE576233A (zh)
BE566753A (zh)
BE563683A (zh)
BE563346A (zh)
BE563272A (zh)	1958-01-15
BE563232A (zh)
NL280217A (zh)