NL2010409C2 - Charged particle lithography system with alignment sensor and beam measurement sensor. - Google Patents
Charged particle lithography system with alignment sensor and beam measurement sensor. Download PDFInfo
- Publication number
- NL2010409C2 NL2010409C2 NL2010409A NL2010409A NL2010409C2 NL 2010409 C2 NL2010409 C2 NL 2010409C2 NL 2010409 A NL2010409 A NL 2010409A NL 2010409 A NL2010409 A NL 2010409A NL 2010409 C2 NL2010409 C2 NL 2010409C2
- Authority
- NL
- Netherlands
- Prior art keywords
- charged particle
- clamping unit
- sensor
- substrate
- chuck
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 148
- 239000002245 particle Substances 0.000 title claims abstract description 129
- 238000001459 lithography Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 230000000903 blocking effect Effects 0.000 claims description 96
- 238000000034 method Methods 0.000 claims description 27
- 230000000737 periodic effect Effects 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 5
- 239000003550 marker Substances 0.000 claims 7
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000002039 particle-beam lithography Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 28
- 238000000059 patterning Methods 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 17
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 14
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000001012 protector Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013519 translation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 229910000595 mu-metal Inorganic materials 0.000 description 1
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- 239000005297 pyrex Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1502—Mechanical adjustments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/3045—Deflection calibration
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261608513P | 2012-03-08 | 2012-03-08 | |
| US201261608513 | 2012-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2010409A NL2010409A (en) | 2013-09-10 |
| NL2010409C2 true NL2010409C2 (en) | 2014-08-04 |
Family
ID=47846008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010409A NL2010409C2 (en) | 2012-03-08 | 2013-03-08 | Charged particle lithography system with alignment sensor and beam measurement sensor. |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9665014B2 (cg-RX-API-DMAC7.html) |
| JP (4) | JP2015509666A (cg-RX-API-DMAC7.html) |
| KR (1) | KR101902469B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104272427B (cg-RX-API-DMAC7.html) |
| NL (1) | NL2010409C2 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI584334B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2013132064A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9665014B2 (en) * | 2012-03-08 | 2017-05-30 | Mapper Lithography Ip B.V. | Charged particle lithography system with alignment sensor and beam measurement sensor |
| US9182219B1 (en) | 2013-01-21 | 2015-11-10 | Kla-Tencor Corporation | Overlay measurement based on moire effect between structured illumination and overlay target |
| JP2014225428A (ja) * | 2013-04-24 | 2014-12-04 | キヤノン株式会社 | 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法 |
| NL2012029C2 (en) * | 2013-12-24 | 2015-06-26 | Mapper Lithography Ip Bv | Charged particle lithography system with sensor assembly. |
| JP2015177032A (ja) * | 2014-03-14 | 2015-10-05 | キヤノン株式会社 | リソグラフィ装置及び物品の製造方法 |
| JP6449985B2 (ja) | 2014-07-30 | 2019-01-09 | エーエスエムエル ネザーランズ ビー．ブイ． | アライメントセンサおよびリソグラフィ装置 |
| US10008364B2 (en) * | 2015-02-27 | 2018-06-26 | Kla-Tencor Corporation | Alignment of multi-beam patterning tool |
| WO2016150631A1 (en) * | 2015-03-23 | 2016-09-29 | Asml Netherlands B.V. | Lithographic apparatus, and device manufacturing method |
| US10585360B2 (en) * | 2017-08-25 | 2020-03-10 | Applied Materials, Inc. | Exposure system alignment and calibration method |
| TWI794530B (zh) * | 2018-07-20 | 2023-03-01 | 美商應用材料股份有限公司 | 基板定位設備及方法 |
| IL298348A (en) * | 2020-06-10 | 2023-01-01 | Asml Netherlands Bv | Interchangeable module for charged particle device |
| TWI888948B (zh) * | 2020-09-03 | 2025-07-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 孔徑陣列、包括孔徑陣列之帶電粒子工具、及其相關非暫時性電腦可讀媒體 |
| EP4202970A1 (en) * | 2021-12-24 | 2023-06-28 | ASML Netherlands B.V. | Alignment determination method and computer program |
| CN118996307A (zh) | 2022-04-20 | 2024-11-22 | 日本制铁株式会社 | 热浸镀钢材 |
| WO2025223848A1 (en) * | 2024-04-23 | 2025-10-30 | Carl Zeiss Smt Gmbh | Inspection apparatus for 3D tomography with improved stand-still performance |
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| US9383662B2 (en) * | 2011-05-13 | 2016-07-05 | Mapper Lithography Ip B.V. | Lithography system for processing at least a part of a target |
| US9665014B2 (en) * | 2012-03-08 | 2017-05-30 | Mapper Lithography Ip B.V. | Charged particle lithography system with alignment sensor and beam measurement sensor |
-
2013
- 2013-03-08 US US14/383,569 patent/US9665014B2/en not_active Ceased
- 2013-03-08 CN CN201380022770.XA patent/CN104272427B/zh active Active
- 2013-03-08 US US16/427,228 patent/USRE49732E1/en active Active
- 2013-03-08 JP JP2014560393A patent/JP2015509666A/ja not_active Withdrawn
- 2013-03-08 KR KR1020147028395A patent/KR101902469B1/ko active Active
- 2013-03-08 TW TW102108399A patent/TWI584334B/zh active
- 2013-03-08 WO PCT/EP2013/054723 patent/WO2013132064A2/en not_active Ceased
- 2013-03-08 NL NL2010409A patent/NL2010409C2/en active
-
2017
- 2017-11-16 JP JP2017220887A patent/JP6931317B2/ja active Active
-
2019
- 2019-10-10 JP JP2019186915A patent/JP7040878B2/ja active Active
-
2022
- 2022-03-09 JP JP2022036220A patent/JP2022069530A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TWI584334B (zh) | 2017-05-21 |
| JP2018061048A (ja) | 2018-04-12 |
| TW201344737A (zh) | 2013-11-01 |
| KR20140138895A (ko) | 2014-12-04 |
| WO2013132064A2 (en) | 2013-09-12 |
| NL2010409A (en) | 2013-09-10 |
| CN104272427A (zh) | 2015-01-07 |
| US20150109601A1 (en) | 2015-04-23 |
| USRE49732E1 (en) | 2023-11-21 |
| JP2022069530A (ja) | 2022-05-11 |
| WO2013132064A3 (en) | 2013-10-31 |
| JP7040878B2 (ja) | 2022-03-23 |
| JP6931317B2 (ja) | 2021-09-01 |
| CN104272427B (zh) | 2017-05-17 |
| US9665014B2 (en) | 2017-05-30 |
| JP2020005005A (ja) | 2020-01-09 |
| KR101902469B1 (ko) | 2018-09-28 |
| JP2015509666A (ja) | 2015-03-30 |
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