NL2007885C2 - Detector array with a through-via interposer. - Google Patents
Detector array with a through-via interposer. Download PDFInfo
- Publication number
- NL2007885C2 NL2007885C2 NL2007885A NL2007885A NL2007885C2 NL 2007885 C2 NL2007885 C2 NL 2007885C2 NL 2007885 A NL2007885 A NL 2007885A NL 2007885 A NL2007885 A NL 2007885A NL 2007885 C2 NL2007885 C2 NL 2007885C2
- Authority
- NL
- Netherlands
- Prior art keywords
- sensor
- integrated circuit
- sensor element
- interposer
- detector array
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/243—Modular detectors, e.g. arrays formed from self contained units
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
- A61B6/4233—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/956,139 US8575558B2 (en) | 2010-11-30 | 2010-11-30 | Detector array with a through-via interposer |
| US95613910 | 2010-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2007885A NL2007885A (en) | 2012-05-31 |
| NL2007885C2 true NL2007885C2 (en) | 2013-11-20 |
Family
ID=45841571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2007885A NL2007885C2 (en) | 2010-11-30 | 2011-11-29 | Detector array with a through-via interposer. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8575558B2 (enExample) |
| JP (1) | JP6039179B2 (enExample) |
| NL (1) | NL2007885C2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011012989B4 (de) * | 2011-03-03 | 2019-05-02 | Ketek Gmbh | Sensorkopf für einen Röntgendetektor |
| US8937285B2 (en) | 2012-06-18 | 2015-01-20 | General Electric Company | Methods and systems for signal communication in gamma ray detectors |
| JP6169922B2 (ja) * | 2012-08-29 | 2017-07-26 | 東芝メディカルシステムズ株式会社 | X線検出サブモジュール、x線検出モジュールおよびx線ct装置 |
| CZ2013669A3 (cs) * | 2013-08-30 | 2015-01-07 | České vysoké učení technické v Praze Ústav technické a experimentální fyziky | Detektor ionizujícího záření umožňující vytvoření souvislého digitálního obrazu |
| US9794499B2 (en) * | 2014-04-29 | 2017-10-17 | Fermi Research Alliance, Llc | Wafer-scale pixelated detector system |
| US9788804B2 (en) * | 2014-07-22 | 2017-10-17 | Samsung Electronics Co., Ltd. | Anatomical imaging system with improved detector block module |
| CN105765406B (zh) | 2014-09-26 | 2018-01-05 | 皇家飞利浦有限公司 | 具有加热设备的辐射探测器 |
| CN106662661B (zh) * | 2014-10-31 | 2019-06-25 | 皇家飞利浦有限公司 | 用于探测辐射信号的传感器设备和成像系统 |
| CN107533145B (zh) * | 2015-04-07 | 2019-03-19 | 深圳帧观德芯科技有限公司 | 制作半导体x射线检测器的方法 |
| US11137504B2 (en) * | 2016-02-05 | 2021-10-05 | General Electric Company | Tiled radiation detector |
| WO2019152340A1 (en) * | 2018-01-30 | 2019-08-08 | Butterfly Network, Inc. | Methods and apparatuses for packaging an ultrasound-on-a-chip |
| CN110664422A (zh) * | 2019-09-09 | 2020-01-10 | 东软医疗系统股份有限公司 | 探测器模块、探测器及医疗成像设备 |
| EP3839575A1 (en) | 2019-12-17 | 2021-06-23 | Koninklijke Philips N.V. | Photon counting detector |
| JP7539272B2 (ja) * | 2020-08-24 | 2024-08-23 | 富士フイルムヘルスケア株式会社 | 放射線検出器モジュール、放射線検出器、及び放射線撮像装置 |
| WO2023101702A1 (en) * | 2021-12-01 | 2023-06-08 | Siemens Medical Solutions Usa, Inc. | Interposer for semiconductor-based single photon emission computed tomography detector |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757878A (en) * | 1996-08-16 | 1998-05-26 | Analogic Corporation | Detector arrangement for x-ray tomography system |
| GB2332608B (en) * | 1997-12-18 | 2000-09-06 | Simage Oy | Modular imaging apparatus |
| US6618267B1 (en) | 1998-09-22 | 2003-09-09 | International Business Machines Corporation | Multi-level electronic package and method for making same |
| US6703617B1 (en) | 1999-04-26 | 2004-03-09 | Simage Oy | Device for imaging radiation |
| US6303992B1 (en) | 1999-07-06 | 2001-10-16 | Visteon Global Technologies, Inc. | Interposer for mounting semiconductor dice on substrates |
| US6441479B1 (en) | 2000-03-02 | 2002-08-27 | Micron Technology, Inc. | System-on-a-chip with multi-layered metallized through-hole interconnection |
| US7282382B2 (en) | 2001-10-29 | 2007-10-16 | Stmicroelectronics N.V. | Method for producing a photodiode contact for a TFA image sensor |
| US7189971B2 (en) | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
| AU2003276401A1 (en) | 2002-10-25 | 2004-05-13 | Goldpower Limited | Circuit substrate and method |
| US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
| JP3935091B2 (ja) | 2003-02-27 | 2007-06-20 | 浜松ホトニクス株式会社 | 半導体装置、及びそれを用いた放射線検出器 |
| JP2005051155A (ja) * | 2003-07-31 | 2005-02-24 | Sony Corp | 半導体集積回路装置 |
| US20050098732A1 (en) | 2003-11-10 | 2005-05-12 | Ls Technologies, Inc. | Flat-panel detector utilizing electrically interconnecting tiled photosensor arrays |
| JP2007524234A (ja) * | 2003-12-30 | 2007-08-23 | ディクスレイ,インコーポレイティド | ピクセル化されたカドミウム亜鉛テルライドに基づいた光子カウントモード検出器 |
| US7289336B2 (en) | 2004-10-28 | 2007-10-30 | General Electric Company | Electronic packaging and method of making the same |
| JP4509806B2 (ja) * | 2005-01-18 | 2010-07-21 | 株式会社日立メディコ | Icパッケージ及びそれを用いたx線ct装置 |
| RU2408110C2 (ru) * | 2006-03-30 | 2010-12-27 | Конинклейке Филипс Электроникс, Н.В. | Матрица детекторов излучения |
| US8330332B2 (en) * | 2006-07-24 | 2012-12-11 | Koninklijke Philips Electronics N.V. | Ultrasound transducer featuring a pitch independent interposer and method of making the same |
| US20080068815A1 (en) | 2006-09-18 | 2008-03-20 | Oliver Richard Astley | Interface Assembly And Method for Integrating A Data Acquisition System on a Sensor Array |
| JP5175853B2 (ja) | 2006-09-25 | 2013-04-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | フリップチップ相互接続貫通チップビア |
| JP2008122116A (ja) * | 2006-11-09 | 2008-05-29 | Ge Medical Systems Global Technology Co Llc | 放射線検出器およびx線断層撮影装置 |
| US7423335B2 (en) | 2006-12-29 | 2008-09-09 | Advanced Chip Engineering Technology Inc. | Sensor module package structure and method of the same |
| US7606346B2 (en) | 2007-01-04 | 2009-10-20 | General Electric Company | CT detector module construction |
| JP4722103B2 (ja) * | 2007-09-21 | 2011-07-13 | 京セラ株式会社 | X線検出素子搭載用配線基板およびx線検出装置 |
| KR101413220B1 (ko) * | 2007-10-02 | 2014-06-30 | 삼성전자주식회사 | 인터포저를 포함하는 반도체 패키지 및 반도체 패키지의 제조방법 |
| JP4855439B2 (ja) * | 2008-04-30 | 2012-01-18 | 浜松ホトニクス株式会社 | 放射線検出器 |
| JP5638540B2 (ja) * | 2009-02-12 | 2014-12-10 | セルン − ヨーロピアン オーガナイゼーション フォー ニュークリア リサーチCERN − European Organization for Nuclear Research | 保護された読み出し電極アセンブリ及びアバランシェ粒子検出器 |
| JP5868575B2 (ja) * | 2010-04-15 | 2016-02-24 | 浜松ホトニクス株式会社 | 接続基板 |
| KR20120005341A (ko) * | 2010-07-08 | 2012-01-16 | 주식회사 하이닉스반도체 | 반도체 칩 및 패키지 |
-
2010
- 2010-11-30 US US12/956,139 patent/US8575558B2/en not_active Expired - Fee Related
-
2011
- 2011-11-29 JP JP2011259727A patent/JP6039179B2/ja not_active Expired - Fee Related
- 2011-11-29 NL NL2007885A patent/NL2007885C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL2007885A (en) | 2012-05-31 |
| US20120133054A1 (en) | 2012-05-31 |
| US8575558B2 (en) | 2013-11-05 |
| JP6039179B2 (ja) | 2016-12-07 |
| JP2012118073A (ja) | 2012-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20201201 |