NL194383C - - Google Patents

Download PDF

Info

Publication number
NL194383C
NL194383C NL9201779A NL9201779A NL194383C NL 194383 C NL194383 C NL 194383C NL 9201779 A NL9201779 A NL 9201779A NL 9201779 A NL9201779 A NL 9201779A NL 194383 C NL194383 C NL 194383C
Authority
NL
Netherlands
Prior art keywords
output
level
mos transistor
terminal
channel transistor
Prior art date
Application number
NL9201779A
Other languages
English (en)
Dutch (nl)
Other versions
NL194383B (enExample
NL9201779A (nl
Inventor
Daisuke Shichinohe
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL9201779A publication Critical patent/NL9201779A/nl
Publication of NL194383B publication Critical patent/NL194383B/xx
Application granted granted Critical
Publication of NL194383C publication Critical patent/NL194383C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
NL9201779A 1991-10-14 1992-10-13 Werkwijze en inrichting voor een met hoge snelheid werkend uitgangsorgaan. NL9201779A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3264635A JP2670651B2 (ja) 1991-10-14 1991-10-14 出力装置
JP26463591 1991-10-14

Publications (3)

Publication Number Publication Date
NL9201779A NL9201779A (nl) 1993-05-03
NL194383B NL194383B (enExample) 2001-10-01
NL194383C true NL194383C (enExample) 2002-02-04

Family

ID=17406091

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9201779A NL9201779A (nl) 1991-10-14 1992-10-13 Werkwijze en inrichting voor een met hoge snelheid werkend uitgangsorgaan.

Country Status (3)

Country Link
US (1) US5343099A (enExample)
JP (1) JP2670651B2 (enExample)
NL (1) NL9201779A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100261962B1 (ko) * 1993-12-31 2000-07-15 김영환 데이타 출력버퍼
JP3229164B2 (ja) * 1994-07-28 2001-11-12 インターナショナル・ビジネス・マシーンズ・コーポレーション ラッチ回路
US5418476A (en) * 1994-07-28 1995-05-23 At&T Corp. Low voltage output buffer with improved speed
US5892383A (en) * 1995-06-13 1999-04-06 Intel Corporation Parallel voltage controlled resistance elements
TW372101U (en) * 1996-10-11 1999-10-11 United Microelectronics Corp Input buffer
US6100743A (en) * 1998-08-25 2000-08-08 Lucent Technologies Inc. Circuit arrangement for adding functionality to a circuit with reduced propagation delays
JP3950120B2 (ja) * 2004-03-31 2007-07-25 株式会社東芝 ドライバ回路及びドライバ回路を有するシステム
US7518424B2 (en) * 2004-11-08 2009-04-14 Elite Semiconductor Memory Technology Inc. Slew rate controlled output circuit
JP2008219249A (ja) * 2007-03-01 2008-09-18 Nec Corp Ｃｍｏｓ回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1938468C3 (de) * 1969-07-29 1974-04-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Dynamische Schaltungsanordnung
JPS5696532A (en) * 1979-12-29 1981-08-04 Citizen Watch Co Ltd Frequency divider
JPS5772429A (en) * 1980-10-22 1982-05-06 Toshiba Corp Semiconductor integrated circuit device
JPS61292412A (ja) * 1985-06-20 1986-12-23 Fujitsu Ltd 出力回路
US4736117A (en) * 1986-11-14 1988-04-05 National Semiconductor Corporation VDS clamp for limiting impact ionization in high density CMOS devices
JPH01305616A (ja) * 1988-06-02 1989-12-08 Toshiba Corp 半導体集積回路の出力回路
JPH02162824A (ja) * 1988-12-16 1990-06-22 Hitachi Ltd 半導体集積回路装置
US5089728A (en) * 1989-09-06 1992-02-18 National Semiconductor Corporation Spike current reduction in cmos switch drivers
JPH0793565B2 (ja) * 1989-11-09 1995-10-09 日本電気株式会社 レベル変換回路
JPH03217118A (ja) * 1990-01-23 1991-09-24 Matsushita Electric Ind Co Ltd 論理増幅器
JPH04114511A (ja) * 1990-09-05 1992-04-15 Nec Corp Ｃｍｏｓインバータ

Also Published As

Publication number Publication date
NL194383B (enExample) 2001-10-01
JP2670651B2 (ja) 1997-10-29
JPH05110402A (ja) 1993-04-30
NL9201779A (nl) 1993-05-03
US5343099A (en) 1994-08-30

Similar Documents

Publication Publication Date Title
US6466063B2 (en) Push-pull output buffer with gate voltage feedback loop
US5036222A (en) Output buffer circuit with output voltage sensing for reducing switching induced noise
EP0329285B1 (en) Output buffer
US5128567A (en) Output circuit of semiconductor integrated circuit with reduced power source line noise
US5391939A (en) Output circuit of a semiconductor integrated circuit
US6459322B1 (en) Level adjustment circuit and data output circuit thereof
US5448182A (en) Driver circuit with self-adjusting impedance matching
US4862018A (en) Noise reduction for output drivers
JP2567153B2 (ja) Ｃｍｏｓ出力バッファ回路
EP0422391B1 (en) CMOS driver circuit
US4902914A (en) Logic circuit used in standard IC or CMOS logic level
US6366114B1 (en) Output buffer with control circuitry
US7053679B2 (en) Output driver for controlling slew rate in a semiconductor device
US5801550A (en) Output circuit device preventing overshoot and undershoot
JPH04233820A (ja) 集積回路
US6242942B1 (en) Integrated circuit output buffers having feedback switches therein for reducing simultaneous switching noise and improving impedance matching characteristics
US5552719A (en) Output buffer circuit having gate voltage control circuit of gate current controlling transistor connected to output transistor
US6157215A (en) Method and apparatus for controlling impedance
US5059823A (en) Supply bounce controlled output buffer circuit
US6091260A (en) Integrated circuit output buffers having low propagation delay and improved noise characteristics
NL9201779A (nl) Werkwijze en inrichting voor een met hoge snelheid werkend uitgangsorgaan.
US6356102B1 (en) Integrated circuit output buffers having control circuits therein that utilize output signal feedback to control pull-up and pull-down time intervals
US6958626B2 (en) Off chip driver
US5160854A (en) Single-drive level shifter with low dynamic impedance
US5517130A (en) Method and structure for reducing noise in output buffer circuits

Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20040501