NL186665C - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL186665C
NL186665C NLAANVRAGE8001409,A NL8001409A NL186665C NL 186665 C NL186665 C NL 186665C NL 8001409 A NL8001409 A NL 8001409A NL 186665 C NL186665 C NL 186665C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE8001409,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8001409A (nl
NL186665B (nl
Inventor
Drs Kornelis Jan Wagenaar
Hendrik Cornelis De Dr I Graaf
Johannes Arnoldus Ing Appels
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8001409,A priority Critical patent/NL186665C/xx
Priority to DE3047738A priority patent/DE3047738C2/de
Priority to GB8040886A priority patent/GB2071412B/en
Priority to SE8009091A priority patent/SE8009091L/
Priority to FR8027683A priority patent/FR2477776A1/fr
Priority to JP18949680A priority patent/JPS56126966A/ja
Priority to IT26985/80A priority patent/IT1194011B/it
Priority to CA000367727A priority patent/CA1155971A/en
Priority to US06/223,199 priority patent/US4409606A/en
Publication of NL8001409A publication Critical patent/NL8001409A/nl
Publication of NL186665B publication Critical patent/NL186665B/xx
Application granted granted Critical
Publication of NL186665C publication Critical patent/NL186665C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
NLAANVRAGE8001409,A 1980-03-10 1980-03-10 Halfgeleiderinrichting. NL186665C (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NLAANVRAGE8001409,A NL186665C (nl) 1980-03-10 1980-03-10 Halfgeleiderinrichting.
DE3047738A DE3047738C2 (de) 1980-03-10 1980-12-18 Halbleiteranordnung
GB8040886A GB2071412B (en) 1980-03-10 1980-12-19 Arrangement of zones in a semiconductor device
SE8009091A SE8009091L (sv) 1980-03-10 1980-12-23 Halvledaranordning
FR8027683A FR2477776A1 (fr) 1980-03-10 1980-12-29 Dispositif semiconducteur a transistor, comportant notamment des moyens de stabilisation de la tension de claquage et du coefficient d'amplification en fonction du courant
JP18949680A JPS56126966A (en) 1980-03-10 1980-12-29 Semiconductor device
IT26985/80A IT1194011B (it) 1980-03-10 1980-12-29 Dispositivo semiconduttore
CA000367727A CA1155971A (en) 1980-03-10 1980-12-30 Semiconductor device
US06/223,199 US4409606A (en) 1980-03-10 1981-01-08 High breakdown voltage semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8001409 1980-03-10
NLAANVRAGE8001409,A NL186665C (nl) 1980-03-10 1980-03-10 Halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL8001409A NL8001409A (nl) 1981-10-01
NL186665B NL186665B (nl) 1990-08-16
NL186665C true NL186665C (nl) 1992-01-16

Family

ID=19834952

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8001409,A NL186665C (nl) 1980-03-10 1980-03-10 Halfgeleiderinrichting.

Country Status (9)

Country Link
US (1) US4409606A (en, 2012)
JP (1) JPS56126966A (en, 2012)
CA (1) CA1155971A (en, 2012)
DE (1) DE3047738C2 (en, 2012)
FR (1) FR2477776A1 (en, 2012)
GB (1) GB2071412B (en, 2012)
IT (1) IT1194011B (en, 2012)
NL (1) NL186665C (en, 2012)
SE (1) SE8009091L (en, 2012)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
US4985373A (en) * 1982-04-23 1991-01-15 At&T Bell Laboratories Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
DE3215652A1 (de) * 1982-04-27 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierbarer bipolarer transistor
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
US4717679A (en) * 1986-11-26 1988-01-05 General Electric Company Minimal mask process for fabricating a lateral insulated gate semiconductor device
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
JP3412332B2 (ja) * 1995-04-26 2003-06-03 株式会社デンソー 半導体装置
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US5859469A (en) * 1997-07-18 1999-01-12 Advanced Micro Devices, Inc. Use of tungsten filled slots as ground plane in integrated circuit structure
US5912501A (en) * 1997-07-18 1999-06-15 Advanced Micro Devices, Inc. Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
US6011297A (en) * 1997-07-18 2000-01-04 Advanced Micro Devices,Inc. Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage
US6392274B1 (en) * 2000-04-04 2002-05-21 United Microelectronics Corp. High-voltage metal-oxide-semiconductor transistor
DE102009039056A1 (de) 2008-11-12 2010-05-20 Sew-Eurodrive Gmbh & Co. Kg Asynchronmotor und Verfahren zum Herstellen eines Asynchronmotor
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564356A (en) * 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
DE2229122A1 (de) * 1972-06-15 1974-01-10 Bosch Gmbh Robert Integrierter schaltkreis
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
US4329703A (en) * 1978-07-21 1982-05-11 Monolithic Memories, Inc. Lateral PNP transistor
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.

Also Published As

Publication number Publication date
US4409606A (en) 1983-10-11
JPH0127592B2 (en, 2012) 1989-05-30
IT1194011B (it) 1988-08-31
SE8009091L (sv) 1981-09-11
DE3047738C2 (de) 1986-07-17
CA1155971A (en) 1983-10-25
GB2071412B (en) 1984-04-18
NL8001409A (nl) 1981-10-01
DE3047738A1 (de) 1981-09-24
GB2071412A (en) 1981-09-16
FR2477776A1 (fr) 1981-09-11
FR2477776B1 (en, 2012) 1984-08-24
JPS56126966A (en) 1981-10-05
IT8026985A0 (it) 1980-12-29
NL186665B (nl) 1990-08-16

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BT A notification was added to the application dossier and made available to the public
A85 Still pending on 85-01-01
BC A request for examination has been filed
R1VN Request for mentioning name(s) of the inventor(s) in the patent or request for changing the name(s) of inventor(s) with respec
NP1 Patent granted (not automatically)
V1 Lapsed because of non-payment of the annual fee