JPS56126966A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56126966A
JPS56126966A JP18949680A JP18949680A JPS56126966A JP S56126966 A JPS56126966 A JP S56126966A JP 18949680 A JP18949680 A JP 18949680A JP 18949680 A JP18949680 A JP 18949680A JP S56126966 A JPS56126966 A JP S56126966A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18949680A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0127592B2 (en, 2012
Inventor
Yan Bagenaaru Korunerisu
Hendoriku Degurafu Korunerisu
Arunorudasu Aperusu Yohanesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS56126966A publication Critical patent/JPS56126966A/ja
Publication of JPH0127592B2 publication Critical patent/JPH0127592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP18949680A 1980-03-10 1980-12-29 Semiconductor device Granted JPS56126966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE8001409,A NL186665C (nl) 1980-03-10 1980-03-10 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS56126966A true JPS56126966A (en) 1981-10-05
JPH0127592B2 JPH0127592B2 (en, 2012) 1989-05-30

Family

ID=19834952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18949680A Granted JPS56126966A (en) 1980-03-10 1980-12-29 Semiconductor device

Country Status (9)

Country Link
US (1) US4409606A (en, 2012)
JP (1) JPS56126966A (en, 2012)
CA (1) CA1155971A (en, 2012)
DE (1) DE3047738C2 (en, 2012)
FR (1) FR2477776A1 (en, 2012)
GB (1) GB2071412B (en, 2012)
IT (1) IT1194011B (en, 2012)
NL (1) NL186665C (en, 2012)
SE (1) SE8009091L (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985373A (en) * 1982-04-23 1991-01-15 At&T Bell Laboratories Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
JPH0758228A (ja) * 1993-07-22 1995-03-03 Philips Electron Nv 集積化デバイス

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
CA1200622A (en) * 1981-12-04 1986-02-11 Western Electric Company, Incorporated Collector for radiation-generated current carriers in a semiconductor structure
DE3215652A1 (de) * 1982-04-27 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierbarer bipolarer transistor
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
US4717679A (en) * 1986-11-26 1988-01-05 General Electric Company Minimal mask process for fabricating a lateral insulated gate semiconductor device
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
JP3412332B2 (ja) * 1995-04-26 2003-06-03 株式会社デンソー 半導体装置
SE512661C2 (sv) * 1996-11-13 2000-04-17 Ericsson Telefon Ab L M Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US5912501A (en) * 1997-07-18 1999-06-15 Advanced Micro Devices, Inc. Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
US6011297A (en) * 1997-07-18 2000-01-04 Advanced Micro Devices,Inc. Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage
US5859469A (en) * 1997-07-18 1999-01-12 Advanced Micro Devices, Inc. Use of tungsten filled slots as ground plane in integrated circuit structure
US6392274B1 (en) * 2000-04-04 2002-05-21 United Microelectronics Corp. High-voltage metal-oxide-semiconductor transistor
DE102009039056A1 (de) 2008-11-12 2010-05-20 Sew-Eurodrive Gmbh & Co. Kg Asynchronmotor und Verfahren zum Herstellen eines Asynchronmotor
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564356A (en) * 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
DE2229122A1 (de) * 1972-06-15 1974-01-10 Bosch Gmbh Robert Integrierter schaltkreis
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
US4329703A (en) * 1978-07-21 1982-05-11 Monolithic Memories, Inc. Lateral PNP transistor
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985373A (en) * 1982-04-23 1991-01-15 At&T Bell Laboratories Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
JPH0758228A (ja) * 1993-07-22 1995-03-03 Philips Electron Nv 集積化デバイス

Also Published As

Publication number Publication date
US4409606A (en) 1983-10-11
IT8026985A0 (it) 1980-12-29
GB2071412B (en) 1984-04-18
NL186665C (nl) 1992-01-16
IT1194011B (it) 1988-08-31
DE3047738A1 (de) 1981-09-24
NL186665B (nl) 1990-08-16
FR2477776A1 (fr) 1981-09-11
FR2477776B1 (en, 2012) 1984-08-24
JPH0127592B2 (en, 2012) 1989-05-30
SE8009091L (sv) 1981-09-11
NL8001409A (nl) 1981-10-01
CA1155971A (en) 1983-10-25
DE3047738C2 (de) 1986-07-17
GB2071412A (en) 1981-09-16

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