NL181829C - Halfgeleiderschakeling voorzien van een brontransistor voor het leveren van een instelstroom voor een schakeltransistor, met aan een hoofdoppervlak van het halfgeleiderlichaam van de transistoren door de als basis van de schakeltransistor dienende zone gedragen collectorzones. - Google Patents
Halfgeleiderschakeling voorzien van een brontransistor voor het leveren van een instelstroom voor een schakeltransistor, met aan een hoofdoppervlak van het halfgeleiderlichaam van de transistoren door de als basis van de schakeltransistor dienende zone gedragen collectorzones.Info
- Publication number
- NL181829C NL181829C NLAANVRAGE7503550,A NL7503550A NL181829C NL 181829 C NL181829 C NL 181829C NL 7503550 A NL7503550 A NL 7503550A NL 181829 C NL181829 C NL 181829C
- Authority
- NL
- Netherlands
- Prior art keywords
- switch transistor
- transistor
- supplying
- main surface
- circuit provided
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/087—I2L integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45478974A | 1974-03-26 | 1974-03-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7503550A NL7503550A (nl) | 1975-09-30 |
| NL181829B NL181829B (nl) | 1987-06-01 |
| NL181829C true NL181829C (nl) | 1987-11-02 |
Family
ID=23806089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7503550,A NL181829C (nl) | 1974-03-26 | 1975-03-25 | Halfgeleiderschakeling voorzien van een brontransistor voor het leveren van een instelstroom voor een schakeltransistor, met aan een hoofdoppervlak van het halfgeleiderlichaam van de transistoren door de als basis van de schakeltransistor dienende zone gedragen collectorzones. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4160988A (ja) |
| JP (2) | JPS5415753B2 (ja) |
| CA (1) | CA1038085A (ja) |
| DE (1) | DE2512737C2 (ja) |
| GB (2) | GB1507299A (ja) |
| NL (1) | NL181829C (ja) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7413264A (nl) * | 1974-10-09 | 1976-04-13 | Philips Nv | Geintegreerde schakeling. |
| JPS561783B2 (ja) * | 1974-12-27 | 1981-01-16 | ||
| JPS5182584A (ja) * | 1974-12-27 | 1976-07-20 | Tokyo Shibaura Electric Co | |
| JPS5547464B2 (ja) * | 1974-12-27 | 1980-11-29 | ||
| US4054900A (en) * | 1974-12-27 | 1977-10-18 | Tokyo Shibaura Electric Co., Ltd. | I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor |
| JPS5513584B2 (ja) * | 1974-12-27 | 1980-04-10 | ||
| JPS5176983A (ja) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | |
| US4119998A (en) * | 1974-12-27 | 1978-10-10 | Tokyo Shibaura Electric Co., Ltd. | Integrated injection logic with both grid and internal double-diffused injectors |
| US4058419A (en) * | 1974-12-27 | 1977-11-15 | Tokyo Shibaura Electric, Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
| JPS5182578A (ja) * | 1974-12-27 | 1976-07-20 | Tokyo Shibaura Electric Co | |
| DE2530288C3 (de) * | 1975-07-07 | 1982-02-18 | Siemens AG, 1000 Berlin und 8000 München | Inverter in integrierter Injektionslogik |
| JPS5811102B2 (ja) * | 1975-12-09 | 1983-03-01 | ザイダンホウジン ハンドウタイケンキユウシンコウカイ | 半導体集積回路 |
| JPS5276887A (en) * | 1975-12-22 | 1977-06-28 | Fujitsu Ltd | Semiconductor device |
| GB1580977A (en) * | 1976-05-31 | 1980-12-10 | Siemens Ag | Schottkytransisitor-logic arrangements |
| JPS5422783A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Iil semiconductor device and its manufacture |
| US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
| US4283236A (en) * | 1979-09-19 | 1981-08-11 | Harris Corporation | Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping |
| US4463369A (en) * | 1981-06-15 | 1984-07-31 | Rca | Integrated circuit overload protection device |
| FR2523370B1 (fr) * | 1982-03-12 | 1985-12-13 | Thomson Csf | Transistor pnp fort courant faisant partie d'un circuit integre monolithique |
| JPH0669101B2 (ja) * | 1983-08-25 | 1994-08-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| JPS6161441A (ja) * | 1984-09-03 | 1986-03-29 | Toshiba Corp | 半導体装置の製造方法 |
| US4644381A (en) * | 1985-04-08 | 1987-02-17 | Siemens Corporate Research & Support, Inc. | I2 L heterostructure bipolar transistors and method of making the same |
| US4745085A (en) * | 1985-04-08 | 1988-05-17 | Siemens Corporate Research & Support, Inc. | Method of making I2 L heterostructure bipolar transistors |
| US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
| JPS62289544A (ja) * | 1986-06-09 | 1987-12-16 | Daikin Ind Ltd | 含フツ素化合物 |
| US5077594A (en) * | 1990-03-16 | 1991-12-31 | Motorola, Inc. | Integrated high voltage transistors having minimum transistor to transistor crosstalk |
| TWI316772B (en) * | 2005-09-20 | 2009-11-01 | Showa Denko Kk | Group iii nitride semiconductor light-emitting device |
| US7974119B2 (en) | 2008-07-10 | 2011-07-05 | Seagate Technology Llc | Transmission gate-based spin-transfer torque memory unit |
| US7936580B2 (en) * | 2008-10-20 | 2011-05-03 | Seagate Technology Llc | MRAM diode array and access method |
| US9030867B2 (en) * | 2008-10-20 | 2015-05-12 | Seagate Technology Llc | Bipolar CMOS select device for resistive sense memory |
| US7936583B2 (en) * | 2008-10-30 | 2011-05-03 | Seagate Technology Llc | Variable resistive memory punchthrough access method |
| US7825478B2 (en) | 2008-11-07 | 2010-11-02 | Seagate Technology Llc | Polarity dependent switch for resistive sense memory |
| US8178864B2 (en) | 2008-11-18 | 2012-05-15 | Seagate Technology Llc | Asymmetric barrier diode |
| US8203869B2 (en) | 2008-12-02 | 2012-06-19 | Seagate Technology Llc | Bit line charge accumulation sensing for resistive changing memory |
| US8159856B2 (en) | 2009-07-07 | 2012-04-17 | Seagate Technology Llc | Bipolar select device for resistive sense memory |
| US8158964B2 (en) | 2009-07-13 | 2012-04-17 | Seagate Technology Llc | Schottky diode switch and memory units containing the same |
| US8648426B2 (en) | 2010-12-17 | 2014-02-11 | Seagate Technology Llc | Tunneling transistors |
| CN102931238A (zh) * | 2011-08-10 | 2013-02-13 | 美丽微半导体股份有限公司 | 具备肖特基能障的定电流半导体元件 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE205262C (ja) * | ||||
| US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
| US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
| US3631311A (en) * | 1968-03-26 | 1971-12-28 | Telefunken Patent | Semiconductor circuit arrangement with integrated base leakage resistance |
| US3643235A (en) * | 1968-12-30 | 1972-02-15 | Ibm | Monolithic semiconductor memory |
| US3659160A (en) * | 1970-02-13 | 1972-04-25 | Texas Instruments Inc | Integrated circuit process utilizing orientation dependent silicon etch |
| US3617827A (en) * | 1970-03-30 | 1971-11-02 | Albert Schmitz | Semiconductor device with complementary transistors |
| US3611067A (en) * | 1970-04-20 | 1971-10-05 | Fairchild Camera Instr Co | Complementary npn/pnp structure for monolithic integrated circuits |
| DE2021824C3 (de) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Halbleiterschaltung |
| DE2026778C3 (de) * | 1970-06-01 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleitervierschichtdiode |
| NL7107040A (ja) * | 1971-05-22 | 1972-11-24 | ||
| US3790817A (en) * | 1972-02-14 | 1974-02-05 | Nat Semiconductor Corp | Schottky clamped ttl circuit |
| DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
| DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
-
1975
- 1975-03-11 GB GB47297/77A patent/GB1507299A/en not_active Expired
- 1975-03-11 GB GB10098/75A patent/GB1507061A/en not_active Expired
- 1975-03-22 DE DE2512737A patent/DE2512737C2/de not_active Expired
- 1975-03-25 NL NLAANVRAGE7503550,A patent/NL181829C/xx not_active IP Right Cessation
- 1975-03-25 JP JP3651575A patent/JPS5415753B2/ja not_active Expired
- 1975-03-25 CA CA223,006A patent/CA1038085A/en not_active Expired
-
1977
- 1977-06-24 US US05/809,615 patent/US4160988A/en not_active Expired - Lifetime
-
1978
- 1978-11-04 JP JP13621878A patent/JPS54122985A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5415753B2 (ja) | 1979-06-16 |
| JPS5538831B2 (ja) | 1980-10-07 |
| GB1507061A (en) | 1978-04-12 |
| DE2512737C2 (de) | 1983-08-04 |
| GB1507299A (en) | 1978-04-12 |
| US4160988A (en) | 1979-07-10 |
| NL7503550A (nl) | 1975-09-30 |
| JPS54122985A (en) | 1979-09-22 |
| NL181829B (nl) | 1987-06-01 |
| CA1038085A (en) | 1978-09-05 |
| DE2512737A1 (de) | 1975-10-02 |
| JPS50134386A (ja) | 1975-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| V1 | Lapsed because of non-payment of the annual fee |