NL164158C - Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode. - Google Patents

Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode.

Info

Publication number
NL164158C
NL164158C NL6904620.A NL6904620A NL164158C NL 164158 C NL164158 C NL 164158C NL 6904620 A NL6904620 A NL 6904620A NL 164158 C NL164158 C NL 164158C
Authority
NL
Netherlands
Prior art keywords
switching
field effect
effect transistor
electrodes provided
steering electrodes
Prior art date
Application number
NL6904620.A
Other languages
English (en)
Dutch (nl)
Other versions
NL6904620A (xx
NL164158B (nl
Inventor
Frederik Leonard Joha Sangster
Rijkert Jan Ir Nienhuis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to DE1919406A priority Critical patent/DE1919406C3/de
Priority to JP44029753A priority patent/JPS4838991B1/ja
Priority to DK214069AA priority patent/DK119523B/da
Priority to FR6912191A priority patent/FR2006741A1/fr
Priority to ES366200A priority patent/ES366200A1/es
Priority to CH594169A priority patent/CH493941A/de
Priority to SE05532/69A priority patent/SE355694B/xx
Priority to BE731765D priority patent/BE731765A/xx
Priority to AT383169A priority patent/AT303818B/de
Priority to GB20261/69A priority patent/GB1260526A/en
Priority to US818725A priority patent/US3624468A/en
Priority to BR208290/69A priority patent/BR6908290D0/pt
Publication of NL6904620A publication Critical patent/NL6904620A/xx
Publication of NL164158B publication Critical patent/NL164158B/xx
Application granted granted Critical
Publication of NL164158C publication Critical patent/NL164158C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL6904620.A 1968-04-23 1969-03-25 Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode. NL164158C (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE1919406A DE1919406C3 (de) 1968-04-23 1969-04-17 Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator
BE731765D BE731765A (xx) 1968-04-23 1969-04-18
FR6912191A FR2006741A1 (fr) 1968-04-23 1969-04-18 Perfectionnements aux transistors a effet de champ
ES366200A ES366200A1 (es) 1968-04-23 1969-04-18 Un dispositivo de transistor de efecto de campo.
CH594169A CH493941A (de) 1968-04-23 1969-04-18 Feldeffekttransistor
SE05532/69A SE355694B (xx) 1968-04-23 1969-04-18
JP44029753A JPS4838991B1 (xx) 1969-03-25 1969-04-18
DK214069AA DK119523B (da) 1968-04-23 1969-04-18 Felteffekttransistor.
AT383169A AT303818B (de) 1968-04-23 1969-04-21 Feldeffekttransistor
GB20261/69A GB1260526A (en) 1968-04-23 1969-04-21 Field effect transistor
US818725A US3624468A (en) 1968-04-23 1969-04-23 Insulated gate field-effect transistor with opposite-type gate connected region inset in source or drain
BR208290/69A BR6908290D0 (pt) 1968-04-23 1969-04-23 Transistor de efeito de campo

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.

Publications (3)

Publication Number Publication Date
NL6904620A NL6904620A (xx) 1969-10-27
NL164158B NL164158B (nl) 1980-06-16
NL164158C true NL164158C (nl) 1980-11-17

Family

ID=19803413

Family Applications (2)

Application Number Title Priority Date Filing Date
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.
NL6904620.A NL164158C (nl) 1968-04-23 1969-03-25 Schakeling met een veldeffecttransistor met een geisoleerde stuurelektrode voorzien van een beveiligingsdiode.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.

Country Status (12)

Country Link
JP (2) JPS4830171B1 (xx)
AT (1) AT301907B (xx)
BE (1) BE731897A (xx)
BR (1) BR6908247D0 (xx)
CH (1) CH505506A (xx)
DE (1) DE1920077C2 (xx)
DK (1) DK135253B (xx)
ES (2) ES366284A1 (xx)
FR (1) FR2010994A1 (xx)
GB (1) GB1273181A (xx)
NL (2) NL174503C (xx)
SE (2) SE429797B (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US3790825A (en) * 1972-10-10 1974-02-05 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3825995A (en) * 1972-10-10 1974-07-30 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
JPS5936401U (ja) * 1982-08-31 1984-03-07 満企業株式会社 コンロ付き缶詰
JPS5936402U (ja) * 1982-08-31 1984-03-07 満企業株式会社 缶詰用加熱台
JPS5975602U (ja) * 1982-11-12 1984-05-22 井上　定夫 携帯用こん炉付容器
JPS60119333U (ja) * 1984-01-23 1985-08-12 株式会社　八木商店 コツヘル等の火台
DE3546745C2 (de) * 1984-05-30 1994-06-30 Toshiba Kawasaki Kk Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61252433A (ja) * 1985-05-02 1986-11-10 Mitsutaka Uto 携帯簡易コンロ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) 1963-11-21 1966-11-29 Burroughs Corp Shift register
FR1430601A (fr) 1964-05-08 1966-03-04 Gen Micro Electronics Inc Dispositif de mémoire
DE1474510B2 (de) 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme

Also Published As

Publication number Publication date
DE1920077A1 (de) 1969-11-06
FR2010994A1 (xx) 1970-02-27
BR6908247D0 (pt) 1973-05-31
DE1920077C2 (de) 1984-11-29
ES366284A1 (es) 1971-05-01
DK135253B (da) 1977-03-21
NL6904620A (xx) 1969-10-27
AT301907B (de) 1972-09-25
SE440420B (sv) 1985-07-29
NL174503B (nl) 1984-01-16
DK135253C (xx) 1977-08-29
BE731897A (xx) 1969-10-22
NL6805705A (xx) 1969-10-27
JPS4817779B1 (xx) 1973-05-31
SE7605172L (sv) 1976-05-06
SE429797B (sv) 1983-09-26
ES386995A1 (es) 1973-04-16
GB1273181A (en) 1972-05-03
JPS4830171B1 (xx) 1973-09-18
NL174503C (nl) 1984-06-18
NL164158B (nl) 1980-06-16
CH505506A (de) 1971-03-31

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee