DK135253B - Kobling til ladningsoverføring. - Google Patents

Kobling til ladningsoverføring.

Info

Publication number
DK135253B
DK135253B DK217669AA DK217669A DK135253B DK 135253 B DK135253 B DK 135253B DK 217669A A DK217669A A DK 217669AA DK 217669 A DK217669 A DK 217669A DK 135253 B DK135253 B DK 135253B
Authority
DK
Denmark
Prior art keywords
coupling
charge transfer
charge
transfer
Prior art date
Application number
DK217669AA
Other languages
English (en)
Other versions
DK135253C (da
Inventor
Frederick Leonard Joh Sangster
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK135253B publication Critical patent/DK135253B/da
Application granted granted Critical
Publication of DK135253C publication Critical patent/DK135253C/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76883—Three-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DK217669AA 1968-04-23 1969-04-21 Kobling til ladningsoverføring. DK135253B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE6805705,A NL174503C (nl) 1968-04-23 1968-04-23 Inrichting voor het overhevelen van lading.

Publications (2)

Publication Number Publication Date
DK135253B true DK135253B (da) 1977-03-21
DK135253C DK135253C (da) 1977-08-29

Family

ID=19803413

Family Applications (1)

Application Number Title Priority Date Filing Date
DK217669AA DK135253B (da) 1968-04-23 1969-04-21 Kobling til ladningsoverføring.

Country Status (12)

Country Link
JP (2) JPS4817779B1 (da)
AT (1) AT301907B (da)
BE (1) BE731897A (da)
BR (1) BR6908247D0 (da)
CH (1) CH505506A (da)
DE (1) DE1920077C2 (da)
DK (1) DK135253B (da)
ES (2) ES366284A1 (da)
FR (1) FR2010994A1 (da)
GB (1) GB1273181A (da)
NL (2) NL174503C (da)
SE (2) SE429797B (da)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3789240A (en) * 1970-10-26 1974-01-29 Rca Corp Bucket brigade scanning of sensor array
US3825996A (en) * 1972-10-10 1974-07-30 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US3825995A (en) * 1972-10-10 1974-07-30 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3790825A (en) * 1972-10-10 1974-02-05 Gen Electric Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
JPS5936401U (ja) * 1982-08-31 1984-03-07 満企業株式会社 コンロ付き缶詰
JPS5936402U (ja) * 1982-08-31 1984-03-07 満企業株式会社 缶詰用加熱台
JPS5975602U (ja) * 1982-11-12 1984-05-22 井上　定夫 携帯用こん炉付容器
JPS60119333U (ja) * 1984-01-23 1985-08-12 株式会社　八木商店 コツヘル等の火台
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
DE3546745C2 (de) * 1984-05-30 1994-06-30 Toshiba Kawasaki Kk Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
JPS61252433A (ja) * 1985-05-02 1986-11-10 Mitsutaka Uto 携帯簡易コンロ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) 1963-11-21 1966-11-29 Burroughs Corp Shift register
FR1430601A (fr) 1964-05-08 1966-03-04 Gen Micro Electronics Inc Dispositif de mémoire
DE1474510B2 (de) 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme

Also Published As

Publication number Publication date
ES386995A1 (es) 1973-04-16
SE440420B (sv) 1985-07-29
JPS4830171B1 (da) 1973-09-18
DK135253C (da) 1977-08-29
DE1920077C2 (de) 1984-11-29
ES366284A1 (es) 1971-05-01
CH505506A (de) 1971-03-31
BE731897A (da) 1969-10-22
SE429797B (sv) 1983-09-26
NL164158B (nl) 1980-06-16
NL6904620A (da) 1969-10-27
SE7605172L (sv) 1976-05-06
DE1920077A1 (de) 1969-11-06
AT301907B (de) 1972-09-25
FR2010994A1 (da) 1970-02-27
NL174503B (nl) 1984-01-16
GB1273181A (en) 1972-05-03
BR6908247D0 (pt) 1973-05-31
NL164158C (nl) 1980-11-17
NL174503C (nl) 1984-06-18
NL6805705A (da) 1969-10-27
JPS4817779B1 (da) 1973-05-31

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Legal Events

Date Code Title Description
PUP Patent expired