AT301907B - Schaltung zum Übertragen von Ladung von einer ersten Kapazität auf eine zweite Kapazität, Vorrichtung mit solchen Schaltungen und Halbleitervorrichtung zur Verwendung in einer derartigen Vorrichtung - Google Patents
Schaltung zum Übertragen von Ladung von einer ersten Kapazität auf eine zweite Kapazität, Vorrichtung mit solchen Schaltungen und Halbleitervorrichtung zur Verwendung in einer derartigen VorrichtungInfo
- Publication number
- AT301907B AT301907B AT383069A AT383069A AT301907B AT 301907 B AT301907 B AT 301907B AT 383069 A AT383069 A AT 383069A AT 383069 A AT383069 A AT 383069A AT 301907 B AT301907 B AT 301907B
- Authority
- AT
- Austria
- Prior art keywords
- capacitance
- circuits
- circuit
- semiconductor device
- transferring charge
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Networks Using Active Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE6805705,A NL174503C (nl) | 1968-04-23 | 1968-04-23 | Inrichting voor het overhevelen van lading. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT301907B true AT301907B (de) | 1972-09-25 |
Family
ID=19803413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT383069A AT301907B (de) | 1968-04-23 | 1969-04-21 | Schaltung zum Übertragen von Ladung von einer ersten Kapazität auf eine zweite Kapazität, Vorrichtung mit solchen Schaltungen und Halbleitervorrichtung zur Verwendung in einer derartigen Vorrichtung |
Country Status (12)
| Country | Link |
|---|---|
| JP (2) | JPS4817779B1 (de) |
| AT (1) | AT301907B (de) |
| BE (1) | BE731897A (de) |
| BR (1) | BR6908247D0 (de) |
| CH (1) | CH505506A (de) |
| DE (1) | DE1920077C2 (de) |
| DK (1) | DK135253B (de) |
| ES (2) | ES366284A1 (de) |
| FR (1) | FR2010994A1 (de) |
| GB (1) | GB1273181A (de) |
| NL (2) | NL174503C (de) |
| SE (2) | SE429797B (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| US3770988A (en) * | 1970-09-04 | 1973-11-06 | Gen Electric | Self-registered surface charge launch-receive device and method for making |
| US3789240A (en) * | 1970-10-26 | 1974-01-29 | Rca Corp | Bucket brigade scanning of sensor array |
| US3825995A (en) * | 1972-10-10 | 1974-07-30 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
| US3784847A (en) * | 1972-10-10 | 1974-01-08 | Gen Electric | Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit |
| US3825996A (en) * | 1972-10-10 | 1974-07-30 | Gen Electric | Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit |
| US3790825A (en) * | 1972-10-10 | 1974-02-05 | Gen Electric | Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit |
| GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
| JPS5936401U (ja) * | 1982-08-31 | 1984-03-07 | 満企業株式会社 | コンロ付き缶詰 |
| JPS5936402U (ja) * | 1982-08-31 | 1984-03-07 | 満企業株式会社 | 缶詰用加熱台 |
| JPS5975602U (ja) * | 1982-11-12 | 1984-05-22 | 井上 定夫 | 携帯用こん炉付容器 |
| JPS60119333U (ja) * | 1984-01-23 | 1985-08-12 | 株式会社 八木商店 | コツヘル等の火台 |
| DE3546745C2 (de) * | 1984-05-30 | 1994-06-30 | Toshiba Kawasaki Kk | Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation |
| US4672407A (en) | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
| JPS61252433A (ja) * | 1985-05-02 | 1986-11-10 | Mitsutaka Uto | 携帯簡易コンロ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3289010A (en) | 1963-11-21 | 1966-11-29 | Burroughs Corp | Shift register |
| FR1430601A (fr) | 1964-05-08 | 1966-03-04 | Gen Micro Electronics Inc | Dispositif de mémoire |
| DE1474510B2 (de) | 1965-12-14 | 1971-11-25 | Siemens AG, 1000 Berlin u. 8000 München | Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme |
-
1968
- 1968-04-23 NL NLAANVRAGE6805705,A patent/NL174503C/xx not_active IP Right Cessation
-
1969
- 1969-03-25 NL NL6904620.A patent/NL164158C/xx not_active IP Right Cessation
- 1969-04-21 AT AT383069A patent/AT301907B/de not_active IP Right Cessation
- 1969-04-21 CH CH600369A patent/CH505506A/de not_active IP Right Cessation
- 1969-04-21 DK DK217669AA patent/DK135253B/da not_active IP Right Cessation
- 1969-04-21 ES ES366284A patent/ES366284A1/es not_active Expired
- 1969-04-21 DE DE1920077A patent/DE1920077C2/de not_active Expired
- 1969-04-22 FR FR6912626A patent/FR2010994A1/fr active Pending
- 1969-04-22 BR BR208247/69A patent/BR6908247D0/pt unknown
- 1969-04-22 BE BE731897D patent/BE731897A/xx not_active IP Right Cessation
- 1969-04-22 GB GB20475/69A patent/GB1273181A/en not_active Expired
-
1971
- 1971-01-02 ES ES386995A patent/ES386995A1/es not_active Expired
-
1972
- 1972-02-07 JP JP47012935A patent/JPS4817779B1/ja active Pending
- 1972-02-07 JP JP47012936A patent/JPS4830171B1/ja active Pending
- 1972-04-21 SE SE7205249A patent/SE429797B/xx unknown
-
1976
- 1976-05-06 SE SE7605172A patent/SE440420B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH505506A (de) | 1971-03-31 |
| DK135253B (da) | 1977-03-21 |
| NL174503C (nl) | 1984-06-18 |
| NL174503B (nl) | 1984-01-16 |
| GB1273181A (en) | 1972-05-03 |
| BE731897A (de) | 1969-10-22 |
| NL6904620A (de) | 1969-10-27 |
| ES366284A1 (es) | 1971-05-01 |
| SE7605172L (sv) | 1976-05-06 |
| ES386995A1 (es) | 1973-04-16 |
| NL164158B (nl) | 1980-06-16 |
| NL164158C (nl) | 1980-11-17 |
| DE1920077A1 (de) | 1969-11-06 |
| DE1920077C2 (de) | 1984-11-29 |
| SE429797B (sv) | 1983-09-26 |
| SE440420B (sv) | 1985-07-29 |
| BR6908247D0 (pt) | 1973-05-31 |
| FR2010994A1 (de) | 1970-02-27 |
| JPS4830171B1 (de) | 1973-09-18 |
| JPS4817779B1 (de) | 1973-05-31 |
| DK135253C (de) | 1977-08-29 |
| NL6805705A (de) | 1969-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |