AT274433B - Schaltung zum Übertragen von Ladung eines ersten Kondensators in einen zweiten Kondensator, Einrichtung zur Verwendung dieser Schaltung und Halbleiterelement für eine derartige Einrichtung - Google Patents

Schaltung zum Übertragen von Ladung eines ersten Kondensators in einen zweiten Kondensator, Einrichtung zur Verwendung dieser Schaltung und Halbleiterelement für eine derartige Einrichtung

Info

Publication number
AT274433B
AT274433B AT954567A AT954567A AT274433B AT 274433 B AT274433 B AT 274433B AT 954567 A AT954567 A AT 954567A AT 954567 A AT954567 A AT 954567A AT 274433 B AT274433 B AT 274433B
Authority
AT
Austria
Prior art keywords
capacitor
circuit
semiconductor element
transferring charge
transferring
Prior art date
Application number
AT954567A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT274433B publication Critical patent/AT274433B/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/26Time-delay networks
    • H03H11/265Time-delay networks with adjustable delay
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Networks Using Active Elements (AREA)
  • Processing Of Color Television Signals (AREA)
  • Amplifiers (AREA)
  • Picture Signal Circuits (AREA)
AT954567A 1966-10-25 1967-10-23 Schaltung zum Übertragen von Ladung eines ersten Kondensators in einen zweiten Kondensator, Einrichtung zur Verwendung dieser Schaltung und Halbleiterelement für eine derartige Einrichtung AT274433B (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL6615058A NL6615058A (de) 1966-10-25 1966-10-25
NL6615057.A NL163392C (nl) 1966-10-25 1966-10-25 Condensatoroverlaadinrichting.
NL6711463A NL6711463A (de) 1966-10-25 1967-08-18

Publications (1)

Publication Number Publication Date
AT274433B true AT274433B (de) 1969-09-25

Family

ID=27351388

Family Applications (1)

Application Number Title Priority Date Filing Date
AT954567A AT274433B (de) 1966-10-25 1967-10-23 Schaltung zum Übertragen von Ladung eines ersten Kondensators in einen zweiten Kondensator, Einrichtung zur Verwendung dieser Schaltung und Halbleiterelement für eine derartige Einrichtung

Country Status (10)

Country Link
US (1) US3546490A (de)
AT (1) AT274433B (de)
BE (1) BE705579A (de)
DE (1) DE1541954C3 (de)
DK (1) DK130130B (de)
ES (1) ES346339A1 (de)
FR (1) FR1557707A (de)
GB (1) GB1175600A (de)
NL (3) NL163392C (de)
SE (1) SE343706B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1967141C3 (de) * 1968-04-23 1982-06-03 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Integrierte Halbleiter-Ladungsübertragungsvorrichtung
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
US3912944A (en) * 1968-04-23 1975-10-14 Philips Corp Integrated bucket brigade memory using transistor barrier capacitors for storage
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
NL6901778A (de) * 1969-02-04 1970-08-06
FR2034274A1 (de) * 1969-03-06 1970-12-11 Automatisme Cie Gle
BE755785A (fr) * 1969-09-06 1971-03-04 Philips Nv Memoire capacitive
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3676863A (en) * 1970-03-11 1972-07-11 Ibm Monolithic bipolar dynamic shift register
US3638047A (en) * 1970-07-07 1972-01-25 Gen Instrument Corp Delay and controlled pulse-generating circuit
NL7014137A (de) * 1970-09-25 1972-03-28
NL7014135A (de) * 1970-09-25 1972-03-28
NL7101037A (de) * 1971-01-27 1972-07-31 Philips Nv
JPS5419744B1 (de) * 1971-04-06 1979-07-17
US3742252A (en) * 1972-01-06 1973-06-26 Woodward Governor Co Signal conversion circuit
AU459101B2 (en) * 1972-02-10 1975-03-20 Matsushita Electric Industrial Co., Ltd. Samplling modulation system for an electronic misical instrument
NL7202070A (de) * 1972-02-17 1973-08-21
US3740591A (en) * 1972-02-25 1973-06-19 Gen Electric Bucket-brigade tuned sampled data filter
GB1435708A (en) * 1972-09-25 1976-05-12 Rca Corp Charge amplifier defibrillators
US3983409A (en) * 1973-04-06 1976-09-28 Itt Industries, Inc. Bucket-brigade circuit
DE2317253C3 (de) * 1973-04-06 1975-09-25 Deutsche Itt Industries Gmbh, 7800 Freiburg Eimerkettenschaltung
US3942034A (en) * 1973-12-28 1976-03-02 Texas Instruments Incorporated Charge transfer device for frequency filtering respective time segments of an input signal
US3942035A (en) * 1974-06-24 1976-03-02 Texas Instruments Incorporated Charge coupled device signal processing apparatus using chirp-Z-transform techniques
US3952188A (en) * 1975-03-24 1976-04-20 Sperry Rand Corporation Monolithic transversal filter with charge transfer delay line
US3971998A (en) * 1975-05-02 1976-07-27 Bell Telephone Laboratories, Incorporated Recursive detector-oscillator circuit
NL7510311A (nl) * 1975-09-02 1977-03-04 Philips Nv Ladingsoverdrachtinrichting.
GB1537843A (en) * 1975-11-17 1979-01-04 Nat Res Dev Charge-coupled devices
IT1075851B (it) * 1975-11-17 1985-04-22 Ibm Circuito perfezionato a trasferimento di carica
US4091342A (en) * 1976-01-02 1978-05-23 General Electric Company Time delay modulator
GB2213007B (en) * 1978-11-25 1989-10-25 Emi Ltd Improvements in or relating to emission of pulsed energy
US4344001A (en) * 1978-12-19 1982-08-10 Sony Corporation Clocking signal drive circuit for charge transfer device
JPS5597097A (en) * 1979-01-12 1980-07-23 Sony Corp Feedback circuit for charge transfer element
FR3043591A1 (fr) 2015-11-13 2017-05-19 Michelin & Cie Composite a base de composant metallique et d'une matrice polymere fonctionnelle
CN112119590A (zh) * 2018-05-11 2020-12-22 维德鸿兴科技发展有限公司 活体检测方法和设备(触摸行为)

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Publication number Priority date Publication date Assignee Title
GB760919A (en) * 1953-05-15 1956-11-07 Nat Res Dev Improvements in or relating to shift register circuits employing transistors
NL112530C (de) * 1955-10-20
GB841844A (en) * 1955-11-04 1960-07-20 Siemens Edison Swan Ltd Improvements relating to chain circuits such as are used for storage purposes in automatic exchange systems
US3047807A (en) * 1958-02-28 1962-07-31 Jeremiah E Langan Delay timer comprising successively charged capacitors with gaseous tube discharge means
US3084288A (en) * 1959-06-01 1963-04-02 Jersey Prod Res Co Electronic delay line using sequentially gated voltage samplers
NL262046A (de) * 1960-03-08
US3230388A (en) * 1960-09-17 1966-01-18 Emi Ltd Integrated structure forming shift register from reactively coupled active elements
US3172043A (en) * 1961-12-11 1965-03-02 Daniel E Altman Signal delay utilizing plurality of samplers each comprising switch, amplifier, andstorage element connected serially
US3207923A (en) * 1962-02-28 1965-09-21 Prager Melvin Storage counter
US3289010A (en) * 1963-11-21 1966-11-29 Burroughs Corp Shift register
DE1227079B (de) * 1963-12-20 1966-10-20 Siemens Ag Schaltungsanordnung zur impulsweisen Energieuebertragung, insbesondere fuer Zeitmultiplex-Vermittlungssysteme
DE1276117C2 (de) * 1964-03-05 1974-07-18 Schaltungsanordnung zur energieuebertragung zwischen mindestens zwei energiespeichern in anlagen zur elektrischen signaluebertragung
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation
FR1430601A (fr) * 1964-05-08 1966-03-04 Gen Micro Electronics Inc Dispositif de mémoire
US3258614A (en) * 1964-08-27 1966-06-28 Shift register employing an energy storage means for each four-layer diode in each stage
US3411018A (en) * 1965-09-27 1968-11-12 Avco Corp Pulse amplitude difference integrator
DE1474510B2 (de) * 1965-12-14 1971-11-25 Siemens AG, 1000 Berlin u. 8000 München Durch schiebeimpulse gesteuerte schieberegister insbesondere fuer zeitmultiplex systeme

Also Published As

Publication number Publication date
ES346339A1 (es) 1969-03-16
SE343706B (de) 1972-03-13
DK130130B (da) 1974-12-23
NL163392B (nl) 1980-03-17
NL163392C (nl) 1980-03-17
DE1541954C3 (de) 1981-07-09
US3546490A (en) 1970-12-08
NL6615057A (de) 1968-04-26
NL6711463A (de) 1969-02-20
DE1541954A1 (de) 1970-11-26
GB1175600A (en) 1969-12-23
BE705579A (de) 1968-04-24
FR1557707A (de) 1969-02-21
DE1541954B2 (de) 1974-01-10
NL6615058A (de) 1968-04-26
DK130130C (de) 1975-06-02

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