NL163063B - Geintegreerde halfgeleiderschakeling van het lading- gekoppelde type voor het opslaan en in volgorde over- dragen van pakketten minderheidsladingsdragers. - Google Patents
Geintegreerde halfgeleiderschakeling van het lading- gekoppelde type voor het opslaan en in volgorde over- dragen van pakketten minderheidsladingsdragers.Info
- Publication number
- NL163063B NL163063B NL7217758.A NL7217758A NL163063B NL 163063 B NL163063 B NL 163063B NL 7217758 A NL7217758 A NL 7217758A NL 163063 B NL163063 B NL 163063B
- Authority
- NL
- Netherlands
- Prior art keywords
- packages
- storing
- load
- semiconductor circuit
- integrated semiconductor
- Prior art date
Links
- 239000000969 carrier Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP165672A JPS5318155B2 (nl) | 1971-12-29 | 1971-12-29 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7217758A NL7217758A (nl) | 1973-07-03 |
NL163063B true NL163063B (nl) | 1980-02-15 |
NL163063C NL163063C (nl) | 1980-07-15 |
Family
ID=11507549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7217758.A NL163063C (nl) | 1971-12-29 | 1972-12-28 | Geintegreerde halfgeleiderschakeling van het lading- gekoppelde type voor het opslaan en in volgorde over- dragen van pakketten minderheidsladingsdragers. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3852801A (nl) |
JP (1) | JPS5318155B2 (nl) |
DE (1) | DE2264125C3 (nl) |
NL (1) | NL163063C (nl) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1442841A (en) * | 1973-11-13 | 1976-07-14 | Secr Defence | Charge coupled devices |
US3955101A (en) * | 1974-07-29 | 1976-05-04 | Fairchild Camera And Instrument Coporation | Dynamic reference voltage generator |
JPS51118969A (en) * | 1975-04-11 | 1976-10-19 | Fujitsu Ltd | Manufacturing method of semiconductor memory |
GB1518953A (en) * | 1975-09-05 | 1978-07-26 | Mullard Ltd | Charge coupled dircuit arrangements and devices |
US4194133A (en) * | 1975-09-05 | 1980-03-18 | U.S. Philips Corporation | Charge coupled circuit arrangements and devices having controlled punch-through charge introduction |
GB1532859A (en) * | 1976-03-30 | 1978-11-22 | Mullard Ltd | Charge coupled circuit arrangements and devices |
DE2642145A1 (de) * | 1976-09-20 | 1978-03-23 | Siemens Ag | Verfahren zum betrieb einer cid-anordnung |
US4271419A (en) * | 1978-01-16 | 1981-06-02 | Texas Instruments Incorporated | Serial readout stratified channel CCD |
US4266234A (en) * | 1978-01-16 | 1981-05-05 | Texas Instruments Incorporated | Parallel readout stratified channel CCD |
US4277792A (en) * | 1978-02-17 | 1981-07-07 | Texas Instruments Incorporated | Piggyback readout stratified channel CCD |
JPH08316414A (ja) * | 1995-05-19 | 1996-11-29 | Rohm Co Ltd | 半導体装置 |
US10689754B2 (en) * | 2017-09-05 | 2020-06-23 | Peter C. Salmon | Programmable charge storage arrays and associated manufacturing devices and systems |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3333115A (en) * | 1963-11-20 | 1967-07-25 | Toko Inc | Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage |
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
GB1174361A (en) * | 1966-11-30 | 1969-12-17 | Rca Corp | Insulated Gate Field-Effect Transistor. |
IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
IE35684B1 (en) * | 1970-10-22 | 1976-04-28 | Western Electric Co | Improvements in or relating to charge transfer devices |
SE383573B (sv) * | 1971-04-06 | 1976-03-15 | Western Electric Co | Laddningskopplad anordning |
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
JPS522793A (en) * | 1975-06-24 | 1977-01-10 | Denki Kagaku Keiki Co Ltd | Nitrogen content measuring device |
-
1971
- 1971-12-29 JP JP165672A patent/JPS5318155B2/ja not_active Expired
-
1972
- 1972-12-28 NL NL7217758.A patent/NL163063C/nl not_active IP Right Cessation
- 1972-12-29 DE DE2264125A patent/DE2264125C3/de not_active Expired
- 1972-12-29 US US00319612A patent/US3852801A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL7217758A (nl) | 1973-07-03 |
US3852801A (en) | 1974-12-03 |
DE2264125C3 (de) | 1984-04-26 |
DE2264125B2 (de) | 1980-01-24 |
JPS4874179A (nl) | 1973-10-05 |
NL163063C (nl) | 1980-07-15 |
DE2264125A1 (de) | 1973-07-19 |
JPS5318155B2 (nl) | 1978-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |