GB1174361A - Insulated Gate Field-Effect Transistor. - Google Patents
Insulated Gate Field-Effect Transistor.Info
- Publication number
- GB1174361A GB1174361A GB5121567A GB5121567A GB1174361A GB 1174361 A GB1174361 A GB 1174361A GB 5121567 A GB5121567 A GB 5121567A GB 5121567 A GB5121567 A GB 5121567A GB 1174361 A GB1174361 A GB 1174361A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- source
- substrate
- insulated gate
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
1,174,361. Semi-conductor devices. RCA CORP. 10 Nov., 1967, No. 51215/67. Heading H1K. An IGFET comprises a high resistivity substrate on one surface of which, is a layer of semi-conductor material of one conductivity type throughout, spaced source and drain regions defining the ends of the channel within the layer, and a gate electrode extending adjacent to a portion only of the channel length and offset towards the source electrode. As shown, Fig. 2, the IGFET is produced by epitaxially depositing an N-type silicon layer 46 doped with arsenic or phosphorus on to a sapphire substrate 42, providing source and drain regions 48, 50 of higher conductivity, producing an oxide layer 52 by heating in steam, and providing source, drain and gate electrodes 56, 58, 60 respectively. The production of the oxide layer 52 generates an accumulation layer at the surface 54 of the layer 46 and this accumulation layer may be enhanced by heating the device in a hydrogen ambient before applying the electrodes. In a second embodiment, Fig. 3 (not shown), the substrate is of intrinsic or of high resistivity P-type silicon. A second insulated gate may be provided over the channel region.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59808066A | 1966-11-30 | 1966-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1174361A true GB1174361A (en) | 1969-12-17 |
Family
ID=24394147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5121567A Expired GB1174361A (en) | 1966-11-30 | 1967-11-10 | Insulated Gate Field-Effect Transistor. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS497392B1 (en) |
| DE (1) | DE1614395B2 (en) |
| ES (1) | ES347711A1 (en) |
| GB (1) | GB1174361A (en) |
| NL (1) | NL6716233A (en) |
| SE (1) | SE345929B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2264125A1 (en) * | 1971-12-29 | 1973-07-19 | Hitachi Ltd | CHARGE-COUPLED SEMICONDUCTOR DEVICE |
-
1967
- 1967-11-10 GB GB5121567A patent/GB1174361A/en not_active Expired
- 1967-11-24 DE DE19671614395 patent/DE1614395B2/en active Pending
- 1967-11-28 ES ES347711A patent/ES347711A1/en not_active Expired
- 1967-11-28 JP JP7696267A patent/JPS497392B1/ja active Pending
- 1967-11-29 NL NL6716233A patent/NL6716233A/xx unknown
- 1967-11-29 SE SE1638867A patent/SE345929B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2264125A1 (en) * | 1971-12-29 | 1973-07-19 | Hitachi Ltd | CHARGE-COUPLED SEMICONDUCTOR DEVICE |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS497392B1 (en) | 1974-02-20 |
| SE345929B (en) | 1972-06-12 |
| DE1614395A1 (en) | 1970-08-20 |
| NL6716233A (en) | 1968-05-31 |
| ES347711A1 (en) | 1969-06-01 |
| DE1614395B2 (en) | 1973-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |