NL1034411A1 - Immersie-lithografiesysteem met gebruikmaking van een afgedichte waferbodem. - Google Patents

Immersie-lithografiesysteem met gebruikmaking van een afgedichte waferbodem.

Info

Publication number
NL1034411A1
NL1034411A1 NL1034411A NL1034411A NL1034411A1 NL 1034411 A1 NL1034411 A1 NL 1034411A1 NL 1034411 A NL1034411 A NL 1034411A NL 1034411 A NL1034411 A NL 1034411A NL 1034411 A1 NL1034411 A1 NL 1034411A1
Authority
NL
Netherlands
Prior art keywords
wafer
fluid
immersion
wafer stage
retained
Prior art date
Application number
NL1034411A
Other languages
English (en)
Other versions
NL1034411C (nl
Inventor
Burn-Jeng Lin
Ching-Yu Chang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1034411A1 publication Critical patent/NL1034411A1/nl
Priority to NL2004506A priority Critical patent/NL2004506C2/nl
Application granted granted Critical
Publication of NL1034411C publication Critical patent/NL1034411C/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1034411A 2006-11-03 2007-09-20 Immersie-lithografiesysteem met gebruikmaking van een afgedichte waferbodem. NL1034411C (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL2004506A NL2004506C2 (nl) 2006-11-03 2010-04-02 Immersie - lithografiesysteem met gebruikmaking van een afgedichte waferbodem.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86420406P 2006-11-03 2006-11-03
US86420406 2006-11-03
US67086007 2007-02-02
US11/670,860 US8208116B2 (en) 2006-11-03 2007-02-02 Immersion lithography system using a sealed wafer bath

Publications (2)

Publication Number Publication Date
NL1034411A1 true NL1034411A1 (nl) 2008-05-08
NL1034411C NL1034411C (nl) 2010-04-09

Family

ID=39359439

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1034411A NL1034411C (nl) 2006-11-03 2007-09-20 Immersie-lithografiesysteem met gebruikmaking van een afgedichte waferbodem.

Country Status (5)

Country Link
US (2) US8208116B2 (nl)
JP (1) JP4742077B2 (nl)
CN (1) CN101174100B (nl)
NL (1) NL1034411C (nl)
TW (1) TWI443467B (nl)

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US8208116B2 (en) 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
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NL1036579A1 (nl) * 2008-02-19 2009-08-20 Asml Netherlands Bv Lithographic apparatus and methods.
NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
SG159467A1 (en) * 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
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CN105093849B (zh) * 2015-08-11 2017-06-23 上海华力微电子有限公司 一种基于多曝光程序的多硅片循环运动方法
US9793183B1 (en) 2016-07-29 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measuring and improving overlay using electronic microscopic imaging and digital processing
US10043650B2 (en) 2016-09-22 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for wet chemical bath process
US10274818B2 (en) 2016-12-15 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with sub-resolution assistant patterns and off-axis illumination
US11054742B2 (en) 2018-06-15 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metallic resist performance enhancement via additives
US11069526B2 (en) 2018-06-27 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Using a self-assembly layer to facilitate selective formation of an etching stop layer
US10867805B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Selective removal of an etching stop layer for improving overlay shift tolerance
US11289376B2 (en) 2019-07-31 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd Methods for forming self-aligned interconnect structures
CN114402263A (zh) * 2019-09-13 2022-04-26 Asml荷兰有限公司 流体处置系统和光刻设备
US12009400B2 (en) 2021-02-14 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Device providing multiple threshold voltages and methods of making the same
US11543754B1 (en) 2021-06-16 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Extractor piping on outermost sidewall of immersion hood apparatus

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US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
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CN100547488C (zh) * 2004-06-23 2009-10-07 台湾积体电路制造股份有限公司 浸入式光学投影系统与集成电路晶片的制造方法
US7501226B2 (en) 2004-06-23 2009-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Immersion lithography system with wafer sealing mechanisms
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006080150A (ja) * 2004-09-07 2006-03-23 Sony Corp 露光装置
JP2006190996A (ja) 2004-12-06 2006-07-20 Nikon Corp 基板処理方法、露光方法、露光装置及びデバイス製造方法
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8208116B2 (en) 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath

Also Published As

Publication number Publication date
US20080106710A1 (en) 2008-05-08
TW200821767A (en) 2008-05-16
US8767178B2 (en) 2014-07-01
CN101174100A (zh) 2008-05-07
JP4742077B2 (ja) 2011-08-10
TWI443467B (zh) 2014-07-01
US20120236276A1 (en) 2012-09-20
NL1034411C (nl) 2010-04-09
JP2008118102A (ja) 2008-05-22
CN101174100B (zh) 2010-06-02
US8208116B2 (en) 2012-06-26

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20091202