NL1018956A1 - Ge´ntegreerde schakeling bevattende een diepe put en dienovereenkomstige werkwijzen. - Google Patents
Ge´ntegreerde schakeling bevattende een diepe put en dienovereenkomstige werkwijzen.Info
- Publication number
- NL1018956A1 NL1018956A1 NL1018956A NL1018956A NL1018956A1 NL 1018956 A1 NL1018956 A1 NL 1018956A1 NL 1018956 A NL1018956 A NL 1018956A NL 1018956 A NL1018956 A NL 1018956A NL 1018956 A1 NL1018956 A1 NL 1018956A1
- Authority
- NL
- Netherlands
- Prior art keywords
- integrated circuit
- deep well
- circuit containing
- corresponding methods
- methods
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66402400 | 2000-09-19 | ||
| US09/664,024 US6534828B1 (en) | 2000-09-19 | 2000-09-19 | Integrated circuit device including a deep well region and associated methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1018956A1 true NL1018956A1 (nl) | 2002-03-21 |
| NL1018956C2 NL1018956C2 (nl) | 2004-11-30 |
Family
ID=24664196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1018956A NL1018956C2 (nl) | 2000-09-19 | 2001-09-14 | Geïntegreerde schakeling bevattende een diepe put en dienovereenkomstige werkwijzen. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6534828B1 (nl) |
| JP (1) | JP2002164542A (nl) |
| DE (1) | DE10145045A1 (nl) |
| FR (1) | FR2814282A1 (nl) |
| IT (1) | ITMI20011952A1 (nl) |
| NL (1) | NL1018956C2 (nl) |
| TW (1) | TW538533B (nl) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6683346B2 (en) * | 2001-03-09 | 2004-01-27 | Fairchild Semiconductor Corporation | Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge |
| JP4024503B2 (ja) * | 2001-09-19 | 2007-12-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US7161208B2 (en) * | 2002-05-14 | 2007-01-09 | International Rectifier Corporation | Trench mosfet with field relief feature |
| JP3971327B2 (ja) | 2003-03-11 | 2007-09-05 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
| US7279743B2 (en) * | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
| TWI222685B (en) * | 2003-12-18 | 2004-10-21 | Episil Technologies Inc | Metal oxide semiconductor device and fabricating method thereof |
| GB0403934D0 (en) * | 2004-02-21 | 2004-03-24 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and the manufacture thereof |
| US7262111B1 (en) * | 2004-09-07 | 2007-08-28 | National Semiconductor Corporation | Method for providing a deep connection to a substrate or buried layer in a semiconductor device |
| GB0419867D0 (en) | 2004-09-08 | 2004-10-13 | Koninkl Philips Electronics Nv | Semiconductor devices and methods of manufacture thereof |
| US7265415B2 (en) * | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| KR100552827B1 (ko) * | 2004-12-22 | 2006-02-21 | 동부아남반도체 주식회사 | 깊은 웰과 게이트 산화막을 동시에 형성하는 고전압반도체 소자의 제조 방법 |
| EP1959495B1 (en) * | 2005-11-22 | 2017-09-20 | Shindengen Electric Manufacturing Co., Ltd. | Trench gate power semiconductor device |
| US8704295B1 (en) | 2008-02-14 | 2014-04-22 | Maxpower Semiconductor, Inc. | Schottky and MOSFET+Schottky structures, devices, and methods |
| JP2011512677A (ja) * | 2008-02-14 | 2011-04-21 | マックスパワー・セミコンダクター・インコーポレイテッド | 半導体素子構造及び関連プロセス |
| JP6047297B2 (ja) * | 2012-04-09 | 2016-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
| JP3260944B2 (ja) * | 1993-12-15 | 2002-02-25 | 三菱電機株式会社 | 電圧駆動型サイリスタおよびその製造方法 |
| JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| EP0746042B1 (en) | 1995-06-02 | 2004-03-31 | SILICONIX Incorporated | Bidirectional blocking trench power MOSFET |
| US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
| DE69617098T2 (de) * | 1995-06-02 | 2002-04-18 | Siliconix Inc | Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer Anordnung |
| GB2314206A (en) * | 1996-06-13 | 1997-12-17 | Plessey Semiconductors Ltd | Preventing voltage breakdown in semiconductor devices |
| JP3904648B2 (ja) * | 1997-01-31 | 2007-04-11 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6096608A (en) * | 1997-06-30 | 2000-08-01 | Siliconix Incorporated | Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench |
| US6084264A (en) | 1998-11-25 | 2000-07-04 | Siliconix Incorporated | Trench MOSFET having improved breakdown and on-resistance characteristics |
-
2000
- 2000-09-19 US US09/664,024 patent/US6534828B1/en not_active Expired - Lifetime
-
2001
- 2001-09-13 DE DE10145045A patent/DE10145045A1/de not_active Withdrawn
- 2001-09-13 TW TW090122760A patent/TW538533B/zh not_active IP Right Cessation
- 2001-09-14 NL NL1018956A patent/NL1018956C2/nl not_active IP Right Cessation
- 2001-09-18 FR FR0112053A patent/FR2814282A1/fr not_active Withdrawn
- 2001-09-18 IT IT2001MI001952A patent/ITMI20011952A1/it unknown
- 2001-09-19 JP JP2001284497A patent/JP2002164542A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002164542A (ja) | 2002-06-07 |
| DE10145045A1 (de) | 2002-08-01 |
| ITMI20011952A1 (it) | 2003-03-18 |
| ITMI20011952A0 (it) | 2001-09-18 |
| FR2814282A1 (fr) | 2002-03-22 |
| TW538533B (en) | 2003-06-21 |
| NL1018956C2 (nl) | 2004-11-30 |
| US6534828B1 (en) | 2003-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| AD1A | A request for search or an international type search has been filed | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) | ||
| PD2B | A search report has been drawn up | ||
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20151001 |