CH695521A5 - Strombegrenzendes Bauelement. - Google Patents

Strombegrenzendes Bauelement.

Info

Publication number
CH695521A5
CH695521A5 CH00353/01A CH3532001A CH695521A5 CH 695521 A5 CH695521 A5 CH 695521A5 CH 00353/01 A CH00353/01 A CH 00353/01A CH 3532001 A CH3532001 A CH 3532001A CH 695521 A5 CH695521 A5 CH 695521A5
Authority
CH
Switzerland
Prior art keywords
current
limiting component
limiting
component
Prior art date
Application number
CH00353/01A
Other languages
English (en)
Other versions
CH695521A8 (de
Inventor
Yoshihiro Yamaguchi
Takeaki Asaeda
Noritoshi Hirano
Katsumi Satoh
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CH695521A5 publication Critical patent/CH695521A5/de
Publication of CH695521A8 publication Critical patent/CH695521A8/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH00353/01A 2000-06-15 2001-02-26 Strombegrenzendes Bauelement. CH695521A8 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000180031A JP4213329B2 (ja) 2000-06-15 2000-06-15 限流装置

Publications (2)

Publication Number Publication Date
CH695521A5 true CH695521A5 (de) 2006-06-15
CH695521A8 CH695521A8 (de) 2006-08-15

Family

ID=18681201

Family Applications (1)

Application Number Title Priority Date Filing Date
CH00353/01A CH695521A8 (de) 2000-06-15 2001-02-26 Strombegrenzendes Bauelement.

Country Status (4)

Country Link
US (1) US6479882B2 (de)
JP (1) JP4213329B2 (de)
CH (1) CH695521A8 (de)
DE (1) DE10109172B4 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1509144A4 (de) * 2002-06-03 2008-09-03 Nmt Medical Inc Vorrichtung mit einem biologischen gewebegerüst für den intrakardialen defektverschluss
US6813178B2 (en) * 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
FR2971623B1 (fr) * 2011-02-14 2017-03-10 Centre Nat Rech Scient Cellule de detection terahertz
US9224951B1 (en) * 2014-07-21 2015-12-29 Intermolecular, Inc. Current-limiting electrodes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3596149A (en) * 1967-08-16 1971-07-27 Hitachi Ltd Semiconductor integrated circuit with reduced minority carrier storage effect
GB1381778A (en) * 1972-06-08 1975-01-29 Cableform Ltd Semiconductor clamping means
FR2430653A1 (fr) * 1978-07-04 1980-02-01 Thomson Csf Resistance au silicium a tres faible coefficient de temperature
JPH0239556A (ja) * 1988-07-29 1990-02-08 Mitsubishi Electric Corp 半導体装置
EP0535536B1 (de) * 1991-09-30 2001-12-05 Texas Instruments Incorporated Durch Verarmung kontrollierte Isolationsstufe
JPH0621349A (ja) 1992-07-01 1994-01-28 Rohm Co Ltd アモルファス半導体素子
JP3983285B2 (ja) * 1994-12-20 2007-09-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ 供給電圧により負荷を動作させる回路
US5880513A (en) 1996-04-18 1999-03-09 Harris Corporation Asymmetric snubber resistor

Also Published As

Publication number Publication date
US20020011647A1 (en) 2002-01-31
JP2001358306A (ja) 2001-12-26
JP4213329B2 (ja) 2009-01-21
DE10109172B4 (de) 2006-10-19
US6479882B2 (en) 2002-11-12
DE10109172A1 (de) 2002-01-03
CH695521A8 (de) 2006-08-15

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Legal Events

Date Code Title Description
PFA Name/firm changed

Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA

Free format text: MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP) -TRANSFER TO- MITSUBISHI DENKI KABUSHIKI KAISHA#NO. 2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU#TOKYO 100-8310 (JP)

PL Patent ceased