NL1018057A1 - Schakeling voor het compenseren van kromming en temperatuursafhankelijkheid van een bipolaire transistor. - Google Patents

Schakeling voor het compenseren van kromming en temperatuursafhankelijkheid van een bipolaire transistor.

Info

Publication number
NL1018057A1
NL1018057A1 NL1018057A NL1018057A NL1018057A1 NL 1018057 A1 NL1018057 A1 NL 1018057A1 NL 1018057 A NL1018057 A NL 1018057A NL 1018057 A NL1018057 A NL 1018057A NL 1018057 A1 NL1018057 A1 NL 1018057A1
Authority
NL
Netherlands
Prior art keywords
circuit
bipolar transistor
temperature dependence
compensating curvature
compensating
Prior art date
Application number
NL1018057A
Other languages
English (en)
Other versions
NL1018057C2 (nl
Inventor
Bruce Michael Furman
Original Assignee
Maxim Integrated Products
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxim Integrated Products filed Critical Maxim Integrated Products
Publication of NL1018057A1 publication Critical patent/NL1018057A1/nl
Application granted granted Critical
Publication of NL1018057C2 publication Critical patent/NL1018057C2/nl

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
NL1018057A 2000-05-11 2001-05-11 Schakeling voor het compenseren van kromming en temperatuursafhankelijkheid van een bipolaire transistor. NL1018057C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56997000 2000-05-11
US09/569,970 US6329868B1 (en) 2000-05-11 2000-05-11 Circuit for compensating curvature and temperature function of a bipolar transistor

Publications (2)

Publication Number Publication Date
NL1018057A1 true NL1018057A1 (nl) 2001-11-13
NL1018057C2 NL1018057C2 (nl) 2003-12-16

Family

ID=24277656

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1018057A NL1018057C2 (nl) 2000-05-11 2001-05-11 Schakeling voor het compenseren van kromming en temperatuursafhankelijkheid van een bipolaire transistor.

Country Status (4)

Country Link
US (1) US6329868B1 (nl)
JP (1) JP2002098595A (nl)
NL (1) NL1018057C2 (nl)
TW (1) TW503617B (nl)

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* Cited by examiner, † Cited by third party
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US6791307B2 (en) * 2002-10-04 2004-09-14 Intersil Americas Inc. Non-linear current generator for high-order temperature-compensated references
US6828847B1 (en) 2003-02-27 2004-12-07 Analog Devices, Inc. Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
US7543253B2 (en) * 2003-10-07 2009-06-02 Analog Devices, Inc. Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry
US7193454B1 (en) 2004-07-08 2007-03-20 Analog Devices, Inc. Method and a circuit for producing a PTAT voltage, and a method and a circuit for producing a bandgap voltage reference
US7127368B2 (en) * 2004-11-19 2006-10-24 Stmicroelectronics Asia Pacific Pte. Ltd. On-chip temperature sensor for low voltage operation
US7326947B2 (en) * 2005-11-15 2008-02-05 Avago Technologies Ecbu Ip Pte Ltd Current transfer ratio temperature coefficient compensation method and apparatus
US7331708B2 (en) * 2006-02-23 2008-02-19 National Semiconductor Corporation Frequency ratio digitizing temperature sensor with linearity correction
KR100913974B1 (ko) * 2006-02-23 2009-08-25 내셔널 세미콘덕터 코포레이션 선형성 정정 기능을 가지는 주파수비 디지털화 온도 센서
JP4745102B2 (ja) * 2006-03-29 2011-08-10 パナソニック株式会社 基準電流制御回路、温度補償機能付き水晶発振器制御ｉｃ、水晶発振器および携帯電話機
WO2008074149A1 (en) * 2006-12-21 2008-06-26 Icera Canada ULC Current controlled biasing for current-steering based rf variable gain amplifiers
US7593701B2 (en) * 2006-04-24 2009-09-22 Icera Canada ULC Low noise CMOS transmitter circuit with high range of gain
US8102201B2 (en) 2006-09-25 2012-01-24 Analog Devices, Inc. Reference circuit and method for providing a reference
US7576598B2 (en) * 2006-09-25 2009-08-18 Analog Devices, Inc. Bandgap voltage reference and method for providing same
US7556423B2 (en) * 2007-01-08 2009-07-07 Microchip Technology Incorporated Temperature sensor bow compensation
US7714563B2 (en) * 2007-03-13 2010-05-11 Analog Devices, Inc. Low noise voltage reference circuit
US20080265860A1 (en) * 2007-04-30 2008-10-30 Analog Devices, Inc. Low voltage bandgap reference source
US7605578B2 (en) 2007-07-23 2009-10-20 Analog Devices, Inc. Low noise bandgap voltage reference
US7719341B2 (en) * 2007-10-25 2010-05-18 Atmel Corporation MOS resistor with second or higher order compensation
US7612606B2 (en) * 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7598799B2 (en) * 2007-12-21 2009-10-06 Analog Devices, Inc. Bandgap voltage reference circuit
US7750728B2 (en) * 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
US7902912B2 (en) 2008-03-25 2011-03-08 Analog Devices, Inc. Bias current generator
US7880533B2 (en) * 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
JP5189882B2 (ja) * 2008-04-11 2013-04-24 ルネサスエレクトロニクス株式会社 温度センサ回路
US8350418B2 (en) * 2009-10-02 2013-01-08 Skyworks Solutions, Inc. Circuit and method for generating a reference voltage
JP5392225B2 (ja) * 2010-10-07 2014-01-22 株式会社デンソー 半導体装置、及び、その製造方法
CN105955391A (zh) * 2016-07-14 2016-09-21 泰凌微电子（上海）有限公司 一种带隙基准电压产生方法及电路
CN111351589B (zh) * 2020-03-09 2021-11-12 西安微电子技术研究所 一种集成于cmos图像传感器的温度传感器及其控制方法
CN115113676B (zh) * 2021-03-18 2024-03-01 纮康科技股份有限公司 具有温度补偿功能的参考电路
CN118032148A (zh) * 2024-04-11 2024-05-14 苏州领慧立芯科技有限公司 一种集成温度传感器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061959A (en) * 1976-10-05 1977-12-06 Rca Corporation Voltage standard based on semiconductor junction offset potentials
US4313082A (en) * 1980-06-30 1982-01-26 Motorola, Inc. Positive temperature coefficient current source and applications
US5608353A (en) * 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
JP3039611B2 (ja) * 1995-05-26 2000-05-08 日本電気株式会社 カレントミラー回路
US5900772A (en) * 1997-03-18 1999-05-04 Motorola, Inc. Bandgap reference circuit and method

Also Published As

Publication number Publication date
JP2002098595A (ja) 2002-04-05
TW503617B (en) 2002-09-21
NL1018057C2 (nl) 2003-12-16
US6329868B1 (en) 2001-12-11

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20031015

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20051201