AU2001227942A1 - Monolithic temperature compensation scheme for field effect transistor integrated circuits - Google Patents

Monolithic temperature compensation scheme for field effect transistor integrated circuits

Info

Publication number
AU2001227942A1
AU2001227942A1 AU2001227942A AU2794201A AU2001227942A1 AU 2001227942 A1 AU2001227942 A1 AU 2001227942A1 AU 2001227942 A AU2001227942 A AU 2001227942A AU 2794201 A AU2794201 A AU 2794201A AU 2001227942 A1 AU2001227942 A1 AU 2001227942A1
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
integrated circuits
temperature compensation
compensation scheme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001227942A
Inventor
Mehran M. Matloubian
Carl W. Pobanz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001227942A1 publication Critical patent/AU2001227942A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
AU2001227942A 2000-04-03 2001-01-18 Monolithic temperature compensation scheme for field effect transistor integrated circuits Abandoned AU2001227942A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/542,241 US6548840B1 (en) 2000-04-03 2000-04-03 Monolithic temperature compensation scheme for field effect transistor integrated circuits
US09542241 2000-04-03
PCT/US2001/001625 WO2001075982A2 (en) 2000-04-03 2001-01-18 Monolithic temperature compensation scheme for field effect transistor integrated circuits

Publications (1)

Publication Number Publication Date
AU2001227942A1 true AU2001227942A1 (en) 2001-10-15

Family

ID=24162933

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001227942A Abandoned AU2001227942A1 (en) 2000-04-03 2001-01-18 Monolithic temperature compensation scheme for field effect transistor integrated circuits

Country Status (4)

Country Link
US (1) US6548840B1 (en)
EP (1) EP1273044A2 (en)
AU (1) AU2001227942A1 (en)
WO (1) WO2001075982A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI239847B (en) * 1997-12-02 2005-09-21 Elan Pharm Inc N-terminal fragment of Abeta peptide and an adjuvant for preventing and treating amyloidogenic disease
JP3918090B2 (en) * 2002-01-29 2007-05-23 日本電気株式会社 Temperature compensation circuit and FET amplifier
DE102004002007B4 (en) 2004-01-14 2012-08-02 Infineon Technologies Ag Transistor arrangement with temperature compensation and method for temperature compensation
US7253074B2 (en) * 2004-11-05 2007-08-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Temperature-compensated resistor and fabrication method therefor
US7951664B2 (en) * 2009-06-05 2011-05-31 Infineon Technologies Ag Methods of manufacturing resistors and structures thereof
US8924765B2 (en) * 2011-07-03 2014-12-30 Ambiq Micro, Inc. Method and apparatus for low jitter distributed clock calibration
US8956938B2 (en) 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9297704B2 (en) * 2014-01-20 2016-03-29 International Business Machines Corporation Modulation methods for CMOS-based thermal sensors

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715638A (en) * 1971-05-10 1973-02-06 Bendix Corp Temperature compensator for capacitive pressure transducers
US4035757A (en) * 1975-11-24 1977-07-12 Rca Corporation Semiconductor device resistors having selected temperature coefficients
US4053915A (en) * 1976-03-22 1977-10-11 Motorola, Inc. Temperature compensated constant current source device
US4229753A (en) * 1977-08-18 1980-10-21 International Business Machines Corporation Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor
DE3416404A1 (en) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
DE3720304A1 (en) * 1987-06-19 1988-12-29 Licentia Gmbh Structured semiconductor body
JP2560140B2 (en) * 1990-08-03 1996-12-04 日産自動車株式会社 Semiconductor device
FR2680291B1 (en) 1991-08-08 1998-06-19 Europ Agence Spatiale POWER AMPLIFIER WITH MESFET TRANSISTORS AND ITS POWER SUPPLY, IN PARTICULAR FOR THE AMPLIFICATION OF MICROWAVE SIGNALS ON BOARD A STALLITE.
US5387880A (en) 1993-10-20 1995-02-07 Trw Inc. Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias
US5724004A (en) 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier
JP2919375B2 (en) * 1996-08-23 1999-07-12 山形日本電気株式会社 Semiconductor device and manufacturing method thereof
US6081014A (en) * 1998-11-06 2000-06-27 National Semiconductor Corporation Silicon carbide chrome thin-film resistor

Also Published As

Publication number Publication date
US6548840B1 (en) 2003-04-15
WO2001075982A2 (en) 2001-10-11
EP1273044A2 (en) 2003-01-08
WO2001075982A3 (en) 2002-04-04

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