AU2001251572A1 - Single supply hfet with temperature compensation - Google Patents
Single supply hfet with temperature compensationInfo
- Publication number
- AU2001251572A1 AU2001251572A1 AU2001251572A AU5157201A AU2001251572A1 AU 2001251572 A1 AU2001251572 A1 AU 2001251572A1 AU 2001251572 A AU2001251572 A AU 2001251572A AU 5157201 A AU5157201 A AU 5157201A AU 2001251572 A1 AU2001251572 A1 AU 2001251572A1
- Authority
- AU
- Australia
- Prior art keywords
- temperature compensation
- single supply
- hfet
- supply hfet
- compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09559791 | 2000-04-27 | ||
US09/559,791 US6479843B2 (en) | 2000-04-27 | 2000-04-27 | Single supply HFET with temperature compensation |
PCT/US2001/011921 WO2001084630A1 (en) | 2000-04-27 | 2001-04-11 | Single supply hfet with temperature compensation |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001251572A1 true AU2001251572A1 (en) | 2001-11-12 |
Family
ID=24235037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001251572A Abandoned AU2001251572A1 (en) | 2000-04-27 | 2001-04-11 | Single supply hfet with temperature compensation |
Country Status (7)
Country | Link |
---|---|
US (1) | US6479843B2 (en) |
JP (1) | JP5219324B2 (en) |
KR (1) | KR100708228B1 (en) |
CN (1) | CN1249813C (en) |
AU (1) | AU2001251572A1 (en) |
TW (1) | TW503576B (en) |
WO (1) | WO2001084630A1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
JP4469139B2 (en) * | 2003-04-28 | 2010-05-26 | シャープ株式会社 | Compound semiconductor FET |
US7253015B2 (en) * | 2004-02-17 | 2007-08-07 | Velox Semiconductor Corporation | Low doped layer for nitride-based semiconductor device |
JP4866007B2 (en) * | 2005-01-14 | 2012-02-01 | 富士通株式会社 | Compound semiconductor device |
US7504677B2 (en) * | 2005-03-28 | 2009-03-17 | Freescale Semiconductor, Inc. | Multi-gate enhancement mode RF switch and bias arrangement |
CN101317253B (en) * | 2005-11-28 | 2010-10-27 | Nxp股份有限公司 | Method of fabricating self aligned schottky junctions for semiconductors devices |
CN101461067B (en) * | 2006-03-20 | 2011-01-19 | St微电子有限公司 | Semiconductor field-effect transistor, memory cell and memory device |
US7701031B2 (en) * | 2006-04-07 | 2010-04-20 | United Microelectronics Corp. | Integrated circuit structure and manufacturing method thereof |
DE102006018765A1 (en) | 2006-04-20 | 2007-10-25 | Infineon Technologies Ag | Power semiconductor component, power semiconductor component and method for its production |
US7915704B2 (en) * | 2009-01-26 | 2011-03-29 | Freescale Semiconductor, Inc. | Schottky diode |
JP2011082216A (en) * | 2009-10-02 | 2011-04-21 | Fujitsu Ltd | Compound semiconductor device and method for manufacturing the same |
US8368121B2 (en) | 2010-06-21 | 2013-02-05 | Power Integrations, Inc. | Enhancement-mode HFET circuit arrangement having high power and high threshold voltage |
CN102194819A (en) * | 2011-04-26 | 2011-09-21 | 电子科技大学 | Enhanced GaN heterojunction field effect transistor based on metal oxide semiconductor (MOS) control |
TWI508281B (en) * | 2011-08-01 | 2015-11-11 | Murata Manufacturing Co | Field effect transistor |
JP5662367B2 (en) * | 2012-03-26 | 2015-01-28 | 株式会社東芝 | Nitride semiconductor device and manufacturing method thereof |
KR102182016B1 (en) | 2013-12-02 | 2020-11-23 | 엘지이노텍 주식회사 | Semiconductor device and semiconductor circuit including the device |
KR102127441B1 (en) * | 2013-12-02 | 2020-06-26 | 엘지이노텍 주식회사 | Semiconductor device and semiconductor circuit including the deivce |
EP2922093B1 (en) * | 2014-03-19 | 2017-05-10 | Nxp B.V. | Hemt temperature sensor |
KR101559111B1 (en) | 2014-04-10 | 2015-10-13 | 홍익대학교 산학협력단 | Bi-direction switching device and manufacturing method for the same |
CN112187237B (en) * | 2020-09-29 | 2021-12-21 | 西安博瑞集信电子科技有限公司 | Enabling circuit |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3682119D1 (en) | 1985-06-21 | 1991-11-28 | Honeywell Inc | COMPLEMENTARY IC STRUCTURE WITH HIGH SLOPE. |
US4760288A (en) * | 1986-07-21 | 1988-07-26 | Honeywell Inc. | Temperature compensation for semiconductor logic gates |
JPH01251819A (en) * | 1988-03-30 | 1989-10-06 | Nec Corp | Buffered fet logic circuit |
JPH03228365A (en) * | 1990-02-02 | 1991-10-09 | Sumitomo Electric Ind Ltd | Semiconductor resistor circuit |
JP2786307B2 (en) * | 1990-04-19 | 1998-08-13 | 三菱電機株式会社 | Field effect transistor and method of manufacturing the same |
US5341114A (en) * | 1990-11-02 | 1994-08-23 | Ail Systems, Inc. | Integrated limiter and amplifying devices |
DE4219523A1 (en) * | 1992-06-15 | 1993-12-16 | Daimler Benz Ag | Monolithically integrated millimeter wave circuit and method for its production |
JPH07106525A (en) * | 1993-10-01 | 1995-04-21 | Hitachi Ltd | Field-effect transistor and compound semiconductor integrated circuit |
DE69522075T2 (en) * | 1994-11-02 | 2002-01-03 | Trw Inc | Method for producing multifunctional, monolithically integrated circuit arrangements |
US5532486A (en) * | 1995-02-13 | 1996-07-02 | Hughes Aircraft Company | Heterojunction diode with low turn-on voltage |
JP2669394B2 (en) * | 1995-02-16 | 1997-10-27 | 日本電気株式会社 | Field-effect transistor |
JPH08250670A (en) * | 1995-03-08 | 1996-09-27 | Oki Electric Ind Co Ltd | Semiconductor device |
JP3379062B2 (en) | 1997-12-02 | 2003-02-17 | 富士通カンタムデバイス株式会社 | Semiconductor device and manufacturing method thereof |
-
2000
- 2000-04-27 US US09/559,791 patent/US6479843B2/en not_active Expired - Lifetime
-
2001
- 2001-04-11 AU AU2001251572A patent/AU2001251572A1/en not_active Abandoned
- 2001-04-11 JP JP2001581347A patent/JP5219324B2/en not_active Expired - Fee Related
- 2001-04-11 KR KR20027014444A patent/KR100708228B1/en active IP Right Grant
- 2001-04-11 CN CNB018086756A patent/CN1249813C/en not_active Expired - Lifetime
- 2001-04-11 WO PCT/US2001/011921 patent/WO2001084630A1/en active Application Filing
- 2001-04-26 TW TW090109999A patent/TW503576B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW503576B (en) | 2002-09-21 |
US20020127787A1 (en) | 2002-09-12 |
KR100708228B1 (en) | 2007-04-17 |
JP5219324B2 (en) | 2013-06-26 |
CN1452789A (en) | 2003-10-29 |
JP2003533027A (en) | 2003-11-05 |
US6479843B2 (en) | 2002-11-12 |
CN1249813C (en) | 2006-04-05 |
WO2001084630A1 (en) | 2001-11-08 |
KR20020093089A (en) | 2002-12-12 |
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