NL1007964C2 - Reeks van dunne laag-aangedreven spiegels en werkwijze voor de vervaardiging ervan. - Google Patents
Reeks van dunne laag-aangedreven spiegels en werkwijze voor de vervaardiging ervan. Download PDFInfo
- Publication number
- NL1007964C2 NL1007964C2 NL1007964A NL1007964A NL1007964C2 NL 1007964 C2 NL1007964 C2 NL 1007964C2 NL 1007964 A NL1007964 A NL 1007964A NL 1007964 A NL1007964 A NL 1007964A NL 1007964 C2 NL1007964 C2 NL 1007964C2
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- thin
- series
- diffusion boundary
- boundary layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 24
- 238000006073 displacement reaction Methods 0.000 claims description 18
- 239000011159 matrix material Substances 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 156
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19970016170 | 1997-04-29 | ||
| KR19970016178 | 1997-04-29 | ||
| KR1019970016179A KR100248987B1 (ko) | 1997-04-29 | 1997-04-29 | 박막형 광로 조절 장치의 제조 방법 |
| KR1019970016178A KR100248988B1 (ko) | 1997-04-29 | 1997-04-29 | 박막형 광로 조절 장치의 제조 방법 |
| KR1019970016170A KR100248491B1 (ko) | 1997-04-29 | 1997-04-29 | 박막형 광로 조절 장치의 제조 방법 |
| KR19970016179 | 1997-04-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1007964A1 NL1007964A1 (nl) | 1998-11-02 |
| NL1007964C2 true NL1007964C2 (nl) | 1999-03-16 |
Family
ID=27349521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1007964A NL1007964C2 (nl) | 1997-04-29 | 1998-01-06 | Reeks van dunne laag-aangedreven spiegels en werkwijze voor de vervaardiging ervan. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6104525A (fr) |
| JP (1) | JPH10301040A (fr) |
| CN (1) | CN1197932A (fr) |
| DE (1) | DE19800323A1 (fr) |
| FR (1) | FR2762687A1 (fr) |
| GB (1) | GB2324882B (fr) |
| NL (1) | NL1007964C2 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
| US6392775B1 (en) * | 1998-01-13 | 2002-05-21 | Seagate Technology Llc | Optical reflector for micro-machined mirrors |
| KR100374486B1 (ko) * | 2001-02-22 | 2003-03-03 | 주식회사 나노위즈 | 초미세전기기계시스템을 이용한 자유 공간 광스위치용박막 미소거울어레이의 구조와 그의 제조방법, 그리고이를 이용한 다차원 광스위칭 방식 |
| US7711013B2 (en) * | 2004-03-31 | 2010-05-04 | Imra America, Inc. | Modular fiber-based chirped pulse amplification system |
| US7369296B2 (en) | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
| US7417783B2 (en) | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
| JP2006114633A (ja) * | 2004-10-13 | 2006-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| EP2495212A3 (fr) * | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Dispositifs MEMS comportant des structures de support et procédés de fabrication associés |
| EP1910218A1 (fr) | 2005-07-22 | 2008-04-16 | Qualcomm Mems Technologies, Inc. | Dispositifs de microsysteme electromecanique comportant des structures de support et leurs procedes de fabrication |
| US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7545552B2 (en) | 2006-10-19 | 2009-06-09 | Qualcomm Mems Technologies, Inc. | Sacrificial spacer process and resultant structure for MEMS support structure |
| US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US7625825B2 (en) | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
| US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
| US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| US8854772B1 (en) | 2013-05-03 | 2014-10-07 | Seagate Technology Llc | Adhesion enhancement of thin film PZT structure |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990997A (en) * | 1988-04-20 | 1991-02-05 | Fujitsu Limited | Crystal grain diffusion barrier structure for a semiconductor device |
| US5232871A (en) * | 1990-12-27 | 1993-08-03 | Intel Corporation | Method for forming a titanium nitride barrier layer |
| US5421974A (en) * | 1993-04-01 | 1995-06-06 | Advanced Micro Devices, Inc. | Integrated circuit having silicide-nitride based multi-layer metallization |
| US5710657A (en) * | 1994-02-23 | 1998-01-20 | Aura Systems, Inc. | Monomorph thin film actuated mirror array |
| CA2149952A1 (fr) * | 1994-06-30 | 1995-12-31 | Robert M. Wallace | Enduit monomoleculaire compose par reconnaissance moleculaire, pour dispositifs micromecaniques |
| JP2789309B2 (ja) * | 1995-03-20 | 1998-08-20 | エルジイ・セミコン・カンパニイ・リミテッド | 高融点金属窒化膜の形成方法 |
| EP0735586B1 (fr) * | 1995-03-28 | 2002-12-11 | Texas Instruments Incorporated | Structures semi-conductrices |
| TW305943B (fr) * | 1995-04-21 | 1997-05-21 | Daewoo Electronics Co Ltd | |
| US5604140A (en) * | 1995-05-22 | 1997-02-18 | Lg Semicon, Co. Ltd. | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same |
| JPH1062614A (ja) * | 1996-05-23 | 1998-03-06 | Daewoo Electron Co Ltd | Ｍ×ｎ個の薄膜アクチュエーテッドミラーアレイの製造方法 |
| KR100212539B1 (ko) * | 1996-06-29 | 1999-08-02 | 전주범 | 박막형 광로조절장치의 엑츄에이터 및 제조방법 |
| US5877889A (en) * | 1996-08-30 | 1999-03-02 | Daewoo Electronics Co., Ltd. | Method for the manufacture of a thin film actuated mirror array |
-
1997
- 1997-12-23 US US08/997,517 patent/US6104525A/en not_active Expired - Lifetime
- 1997-12-23 GB GB9727237A patent/GB2324882B/en not_active Expired - Fee Related
- 1997-12-24 JP JP9354329A patent/JPH10301040A/ja active Pending
-
1998
- 1998-01-06 FR FR9800056A patent/FR2762687A1/fr active Pending
- 1998-01-06 NL NL1007964A patent/NL1007964C2/nl not_active IP Right Cessation
- 1998-01-07 DE DE19800323A patent/DE19800323A1/de not_active Withdrawn
- 1998-01-07 CN CN98103935A patent/CN1197932A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2324882B (en) | 2001-05-23 |
| GB9727237D0 (en) | 1998-02-25 |
| JPH10301040A (ja) | 1998-11-13 |
| US6104525A (en) | 2000-08-15 |
| NL1007964A1 (nl) | 1998-11-02 |
| FR2762687A1 (fr) | 1998-10-30 |
| DE19800323A1 (de) | 1998-11-05 |
| GB2324882A (en) | 1998-11-04 |
| CN1197932A (zh) | 1998-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1B | A search report has been drawn up | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 19981113 |
|
| PD2B | A search report has been drawn up | ||
| VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20040801 |