MXPA97007869A - Lighted movie set of delgadapara mirror for use in an opt projection system - Google Patents

Abstract

The present invention relates to a set of thin film driven mirrors M x N where M and N are total numbers for use in an optical projection system, the set comprising: an active matrix including a substrate, a set of transistors M x N and a set of connection terminals M x N, wherein each of the connection terminals is electrically connected to a corresponding transistor in the set of transistors, a stabilization layer formed in the upper part of the active matrix; an attack reagent brake layer formed on the top of the stabilization layer, and a set of M x N drive structures, each of the drive structures being provided with proximal and distant ends; drive structures have a tip at the far end thereof and an opening of reagent for attack that traverses the same, each of the action structures These include a first thin film electrode, a thin film electroplating member, a second thin film electrode, an elastic member and a conduit, wherein the first thin film electrode is located on the upper part of the electroplating film member. thin and divided into portions of drive and light reflection by a horizontal tape, the horizontal tape electrically disconnects the drive and light reflection portions thereof, the driving portion thereof is electrically connected to the floor, thereby allowing the operating portion to the light reflection portion thereof to function as a mirror or a tilt electrode and as a mirror respectively, the thin film electroplating member is placed on top of the second electrode of thin film, the second thin film electrode is formed on top of the elastic member, the second thin film electrode is electrically connected to a corresponding transistor through the conduit and the connection terminal, and electrically disconnected from the second thin film electrode in other thin film driven mirrors, thereby enabling its functioning as a signal electrode, the elastic member is located at the bottom of the second thin-film electrode and a lower portion at the proximal end thereof is joined on the upper part of the active matrix with the reagent brake for attack and the stabilization layers partially intervene between them, with this they are mounted on a bracket of drive structure, and the conduit extends from the upper part of the thin film electrodiaplate member to the upper part of the corresponding terminal connection, electrically connecting the second thin film electrode with the terminal connection

Description

LIGHT FILM POWERED MIRROR ASSEMBLY TO BE USED IN AN OPTICAL PROJECTION SYSTEM Technical Field of the Invention The present invention relates to an optical projection system; and more particularly, to a set of M x N thin film driven mirrors for use in the system and a method for manufacturing same.

Background of the Technique Among the variety of video images available in the art, a projection system is known as capable of providing high quality images on a large scale. In this type of optical projection systems, the light of a lamp is illuminated uniformly in a set of, for example, M X N, driven mirrors, wherein each of the mirrors is coupled with each of the actuators. The actuators can be made of an electrodisplacive material such as the piezoelectric or an electrostrictive material that deforms in response to an electric field applied to it.

The ray of light that is reflected in each of the mirrors is incident at the time of an opening, for example, an optical baffle. By applying an electrical signal to each of the actuators, the relative position of each of the mirrors towards the incident light beam is altered, and therefore causes a deviation in the optical path of the reflected beam from each of the Mirrors. As the optical path of each of the reflected rays varies, the amount of light reflected from each of the mirrors passing through the aperture changes, so that the intensity of the beam is modulated. The rays modulated through the aperture are transmitted on a projection screen through an appropriate optical device such as a projection lens, thereby displaying an image on it.

In Figures IA to 1G, the manufacturing steps involved in the manufacture of a set of thin film driven mirrors 101 M x N, where M and N are integers, disclosed in a joint application, are illustrated. Copendent with Serial Number 08 / 430,628 of the United States and entitled "SET OF MIRROR-POWERED SIDE-MOVIE MIRROR".

The process for manufacturing the assembly 100 begins with the preparation of an active matrix 10 comprising a substrate 12, a set of transistors M x N (not shown) and a set of connection terminals 14 of M x N.

In a subsequent step, a sacrificial layer 24 is formed on the top of the active matrix 10 using a trimming or evaporation method; whether the thin film sacrificial layer 24 is made of metal, a chemical vapor deposition (CVD) or a spin coating method if the sacrificial layer 24 of the thin film is made of a phosphorus silicate glass (PSG) ), or a CVD method if the thin film sacrificial layer 24 is made of poly-Si.

Subsequently, a support layer 20 is formed, including a set of support members M x N 22, surrounded by the thin film sacrificial layer 24, wherein the support layer 20 is formed by: creating a set of empty slots of M x N (not master) on the thin film sacrificial layer 24 by the use of a photolithographic method; each of the empty slots is located around the connection terminals 14; and forming a support member 22 in each of the empty slots located around the connection terminals 14 using a disintegration method or CVD method, as shown in Figure IA. The support members 22 are made of an insulating material.

In a next step, an elastic layer 30 made of the same insulating material as the support member 22 is formed on the upper part of the backing layer 20 using a Gel-Sol, disintegration or CVD method.

Subsequently, a conduit 26 made of a metal is formed in each of the support members 22, by: first creating a set of holes of M x N (not shown), each of the holes extending from the top from the elastic layer 30, to the upper part of the connection terminals 14, using a chemical substance attack method; and filling them with the metal to form duct 26, as shown in Figure IB.

In a next step, a second thin film layer 40 made of an electrical conduction material is formed in the upper part of the elastic layer 30, including the conduits 26 by means of the use of a disintegration method. The second layer 40 of the thin film is electrically connected to the transistors through the conduits 26 formed in the support members 22.

Then, a thin film electroplating layer 50 made of a pelecroelectric material, for example, lead zirconium titanate (PZT) is formed on top of the second thin film layer 40 using a disintegration method, a method of CVD or a method of Sol-. Gel as shown in Figure 1C.

In a next step, the thin film electroplating layer 50, the second thin film layer 40 and the elastic layer 30 are patterned into a set of thin film electroplating members 55 M x N, a set of second electrode plate 45 members. thin film of N x M and a set of elastic members of M x N using a photolithography or laser cutting method until the thin film sacrificial layer 24 in the supporting layer 20 is exposed as shown in Figure ID. Each of the second thin film electrodes 45 is electrically connected to a corresponding transistor through a conduit 26 that is formed in each of the support members 22 and functions as an electrode signal in the thin film driven mirrors 101. .

Next, each of the thin-film electroplating members 55 is heat treated at a high temperature, for example, for PZT around 650 ° C, to allow a phase transition to take place and thereby form a set of heat treated structures of M x N (not shown). Since each of the thin film electroplating members are heat treated and thin enough, there is no need to hold them with sticks if they are made of a pezoelectric material: for this purpose they can be supported with sticks with the electrical signal that is applied during the operation of the thin film driven mirrors 101.

After the previous step, a set of the first thin film electrodes 65 made of an electrical and light reflecting material is formed on the upper part of the thin film electrodeplastic members 55 in the set of heat-treated structures M x N by: first forming a layer 60 made of an electrical conductive and light reflecting material, which completely covers the upper part of the set of heat-treated structures M x N, including the thin film sacrificial layer 24 exposed in the support layer 20, using a disintegration method, as shown in Figure 1E; and then the layer 60 is selectively removed using a chemical etching method, resulting in a set 110 of mirror structures 111 driven M x N, wherein each of the mirror structures 111 includes a top surface and 4 side surfaces as shown in Figure 1F. Each of the first thin film electrodes 65 functions as a mirror, as well as a tilting electrode in the thin film driven mirrors 101.

The above step is then followed by a complete coating of the upper surface of the four side surfaces in each of the mirror structures 111 operated with a thin film protection layer (not shown).

The thin film sacrificial film 24 in the support layer 20 is then extracted using the reagent method for attack. Finally, the protective layer of the thin film is removed and with this the assembly 100 of thin film driven mirrors of M x N is formed, as shown in Figure 1G.

There are certain deficiencies associated with the method described above for the manufacture of the set 100 of thin film driven mirrors 101 of M x N. The extraction of the thin film sacrificial layer 24 is generally followed by a rinsing of an acid or a substance chemical that is used in the extraction of the same one using a rinse that in turn is extracted by means of the evaporation of the same one. During the extraction of the rinse, the tension of the rinsing surface can pull the elastic member 35 downwards from the active matrix 10; with this the elastic member 35 is glued to the active matrix 10, affecting the operation of the respective thin film driven mirrors 101. When the thin film driven mirrors 101 are sufficiently affected in this way, the entire operation of the assembly 100 can also be degraded.

Additionally, to extract the sacrificial layer 24 from the thin film in the backing layer 20 to create an activated space of each of the thin film driven mirrors 101 using a rectifying method for chemical etching, the acid or the chemical substance is inserted. through the spaces between the driven mirror structures 111 covered with the thin film protection layer. However, this takes extremely long time to completely remove the sacrificial layer 24 from the thin film in the backing layer 20, and in addition, the thin film sacrificial layer 24 may not be completely removed, leaving remnants of it in the space of intended activation, which in turn will degrade the operation of the thin film driven mirror 101 and thus affected. Again, when the thin film driven mirrors 101 are sufficiently affected in this way, the entire operation of the assembly 100 can also be degraded.

In addition to the deficiencies described above in the method for the manufacture thereof, the assembly 100 thus prepared has a major defect, this defect could be the total optical efficiency. When each of the thin film driven mirrors 101 deforms in response to an applied electric field through the thin film electroplating member 55 thereof, the first thin film electrode 65 is attached thereto, which also acts as a mirror; It is also deformed with this, instead of creating a planar top surface, it creates a curved upper surface from where the rays of light are reflected. As a result, the entire optical efficiency of the assembly 100 decreases.

Information of the Invention Therefore, a main objective of the present invention is to provide a set of thin film driven mirrors M x N; each of these thin film driven mirrors have an original structure that will best prevent the elastic member from sticking to the active matrix during the extraction of the rinse in the manufacturing process thereof.

Another object of the present invention is to provide a set of thin film driven mirrors M x N, each of these thin film driven mirrors having an original structure which will facilitate a more complete and effective extraction of the sacrificial layer of the thin film in the process of manufacturing it.

Still another object of the present invention is to provide a set of thin film driven mirrors M x N having improved optical efficiency.

A further object of the present invention is to provide a method for the manufacture of this set of thin film driven mirrors M x N.

In accordance with one aspect of the present invention is to provide a set of thin film driven mirrors M x N, where M and N are integers for use in an optical projection system; the set comprises: an active matrix including a substrate, a set of transistors M x N and a set of connection terminals M x N, wherein each of the connection terminals are electrically connected to a corresponding transistor in the set of transistors; a stabilization layer formed in the upper part of the active matrix; a reagent brake layer for attack formed on top of the stabilization layer; and a set of drive structures, each of the ratio actuation structures with proximal and distant ends, each of the drive structures having a tip at the distal end thereof and an opening for the acid therethrough.; each of the drive structures includes a first thin film electrode; a thin film electroplating member, a second thin film electrode, an elastic member and a conduit wherein the first thin film electrode is located on the electroplating member of the thin film and is divided into a driving portion and a reflecting portion. of light through a horizontal ribbon; 1 horizontal tape electrically disconnects the drive and light reflection portions thereof; the actuating portion thereof is electrically connected to the floor and thereby allows the actuating portion and the light reflecting portion to function as a mirror and a tilt electrode and as a mirror respectively; the thin film electroplating member is placed on top of the second electrode of the thin film; the second thin film electrode is formed on the upper part of the elastic member, the second thin film electrode is electrically connected to a corresponding transistor through the conduit and the connection terminal, and electrically disconnected from the second thin film electrode in other thin film driven mirrors, and with this it is allowed to function as a signal electrode; the elastic member is located at the bottom of the second thin film electrode and a lower portion at the proximal end thereof is joined on the upper part of the active matrix with the brake of the attack reagent and the stabilization layers intervene partially between these, whereby the drive structures are mounted on a bracket, and the conduit extends from the top of the thin-film electroslag member to the top of a corresponding terminal connection, electrically connecting the second thin-film electrode to the connection terminal.

In accordance with another aspect of the present invention, there is provided a method for manufacturing a set of thin film driven mirrors M x N, where M and N are total numbers and each of the thin film driven mirrors correspond to a computer screen for use in an optical projection system; the method comprises the steps of: providing an active matrix including a substrate, a set of connection terminals M x N and a set of transistors M x N, wherein each of the connection terminals are electrically connected to a corresponding transistor in the set of transistors; deposit a stabilization layer on top of the active matrix; depositing a reagent brake layer to attack on top of the stabilization layer; depositing a sacrificial layer of thin film on the top of the brake layer of the attack reagent, wherein the thin film sacrificial layer has a top surface; flattening the upper surface of the sacrificial layer of the thin film; creating a set of M x N pairs of empty cavities in the sacrificial layer of the thin film such that one of the empty slots in each pair surrounds one of the connection terminals; depositing an elastic layer and a second layer of thin film successively on top of the sacrificial layer of the thin film including the empty cavities. Iso-cutting the second layer of thin film into a set of second thin film electrodes M x N wherein each of the second thin film electrodes are electrically disconnected from each other; depositing a thin film eletrodisplacive layer and a first thin film rod successively on top of the set of the second thin film electrodes M x N to thereby form a multi-layered structure; designing the multi-layered structure in a set of M x N powered mirror structures until the thin film sacrificial layer is dispensed in such a way that each of the driven mirror structures has a tip at a distal end thereof and a reagent opening for attack going through everything; each of the mirror-driven structures includes a thin film electrode, a thin film electroplating member, a second thin film electrode and an elastic member, wherein the first thin film electrode is divided into a driving portion and a portion of light reflection by a horizontal ribbon; the horizontal tape is electrically disconnected from the drive portion and from the light reflection portion thereof; the driving portion thereof is electrically connected to the floor; creating a set of holes M x N, each of the holes extending from the upper part of the thin film electrisplacing member to a corresponding connecting terminal; filling each of the holes with a metal to thereby form a conduit therein and thereby forming a set of semi-inverted driven mirrors M x N; Semi-fragmentation of data from the active matrix by forming an incision in the active matrix; completely cover each of the semifinished powered mirrors with a thin film protective layer; extracting the sacrificial layer of the thin film using an acid or a chemical substance, wherein the acid or chemical substance is inserted into the opening of the reagent for attack in each of the semifinished powered mirrors and the gap between the semifinished powered mirrors; remove the thin film protection layer and completely fragment the active matrix into a desired shape to form a set of thin film driven mirrors M x N.

Brief description of the Drawings The foregoing and other objects and features of the present invention will be apparent from the following description of the preferred embodiments given together with the accompanying drawings, wherein: FIGS. 1A to 1G are schematic cross sectional views illustrating a method for manufacturing a set of Mx N thin film driven mirrors previously disclosed; Figure 2 is a cross sectional view establishing a set of thin film driven mirrors M x M in accordance with the present invention; Figures 3A through 3N are schematic cross sectional views illustrating a method for manufacturing a set of thin film driven mirrors M x N shown in Figure 2; and Figures 4A to 4D are top views of the layers of thin films that constitute each of the thin film driven mirrors shown in the Figure Way to Carry Out the Invention 2A to 3N and 4A to 4D are provided in Figures 2, 2A through 4D, a cross sectional view establishing a set of thin film driven mirrors 301 M x N, where M and N are total numbers, to be used in a system optical projection; the schematic transverse sectional views illustrate a method for manufacturing a set 300 of thin film driven mirrors 301 M x N, and top views of layers of thin films constituting each of the thin film driven mirrors 301, in accordance with the present invention respectively. It should be noted that the similar parts shown in Figures 2, 3A to 3N and 4A to 4D are represented by reference numeral.

In Figure 2, a cross sectional view is provided which establishes a set 300 of thin film driven mirrors 301 M x N in accordance with the present invention; the assembly 300 comprises an active matrix 210, a stabilization layer 220, a reagent brake layer for attack 230 and a set of drive structures 20C M x N.

The active matrix 210 includes a substrate 212, a set of transistors M x N (not shown) and a set of connection terminals M x N 214. Each connection terminal 214 is electrically connected to a corresponding transistor in the set of transistors .

Stabilization layer 220 made of, for example, phosphorus silicate glass (PSG) or silicon nitride glass and having a thickness of 0.1-2 μm, is located on top of active matrix 210.

The attack reagent brake layer 230, made of silicon nitride and having a thickness of 0.1-2 μm, is placed on top of the stabilization layer 220.

Each of the drive structures 200 have a proximal and a distal end, and further include a tip (not shown) at the distal end thereof and an aperture for the etchant (not shown) that is traversed at long. Each of the drive structures 200 is provided with a first thin film electrode 285, a thin film electroplating member 275, a second thin film electrode 265, an elastic member 255 and a conduit 295. The first film electrode 285 The thin one is made of an electrical and light reflecting material, for example, aluminum (Al) or silver (Ag), is located on the upper part of the thin film electroplating member 275, and is divided into portions 190, 195 , actuating and reflecting light by means of a horizontal belt 287, wherein the horizontal belt 287 electrically disconnects the actuating and light reflecting portions 190, 195. The actuating portion 190 thereof is electrically connected to the floor, thereby functioning as a mirror, as well as a common tilt electrode. The portion 195 of light reflection thereof works like the mirror. The thin film electroplating member 275, made of a piezoelectric material, for example, lead zirconium titanate (PZT) or an electrostrictive material, eg, magnesium lead niobate (PMN) is placed on top of the second thin film electrode 265. The second thin film electrode 265, made of an electrical conductive material, for example, platinium / tantalum (Pt / Ta)), is located on the upper part of the elastic member 255, and is electrically connected to a corresponding transistor through of the conduit 295 and the connection terminal 214 and electrically disconnected from the second thin film electrode 265 in another thin film driven mirror 301, thereby allowing it to function as a signal electrode. The elastic member 255, made of nitride, for example, silicon nitride, is placed below the second electrode 265 of the thin film. A lower portion at the proximal end thereof is joined to the upper part of the active matrix 210, with the brake 230 of the reagent for attack and the stabilization layers 220 partially intervening therebetween, and which thereby fragments the data of the drive structure 200. The conduit 295, made of a metal, for example, the tungsten (w), extends from the upper part of the thin-layer electrisplacer member 275 to the upper part of a corresponding connecting terminal 214, thereby electrically connecting the second thin film electrode 265 to connection terminal 214. The conduit 295 extends downwardly from the top of the thin film electroplating member 275 and the first thin film electrode 285 positioned on top of the thin film electrisplacer member 275 in each of the thin film driven mirrors 301 which they are not electrically connected to one another.

In Figures 3A and 3N, schematic cross sectional views illustrating a method for manufacturing the set 300 of thin film driven mirrors 301 M x N shown in Figure 2 are provided.

The process of making the assembly 300 begins with the preparation of an active matrix 210, including a substrate 212, a set of connection terminals 214 M x N and a set of M x N transistors (not shown), as shown in Figure 3A. The substrate 212 is made of an insulating material, for example Si-tablet. Each of the connection terminals 214 are electrically connected to a corresponding transistor in the set of transistors.

In a subsequent step, a stabilization layer 22C is formed, made of, for example, PSG or silicon nitride, and having a thickness of 0.1-2 μm, on top of the active matrix 210, using for example, a CVD or a rotation coating method, as shown in Figure 3B.

Then, an attack reagent brake layer 230, made of a silicon nitride and having a thickness of 0.1 to 2 μm, is deposited on the top of the stabilization layer 220 using, for example, a CVD method or of disintegration, as shown in Figure 3C.

Then, a sacrificial layer 240 of thin film is formed on the upper part of the reagent brake layer 230 for attack as shown in Figure 3D. The thin film sacrificial layer 240 is formed using the disintegration or evaporation method if the thin film sacrificial layer 240 is made of a metal, a CVD, or a spin coating method is used if the film sacrificial layer 240 thin is made of a PSG, or a CVD method is used if the thin film sacrificial layer 240 is made of poly-Si. The thin film sacrificial layer 240 has a top surface.

Next, the upper surface of the sacrificial layer 240 of the thin layer is made flat using a method of rotating movement on the glass (SOG) or a mechanical polishing method of chemical substance (CMP) followed by a scrubbing method such as It is shown in Figure 3E. In the next step, an elastic layer 250 made of nitride, for example, silicon nitride, and having a thickness of 0.1-2 μm, is deposited on top of the thin film sacrificial layer 1240 including the empty cavities 245 using a CVD method, as shown in Figure 3G. During deposition, the tension within the elastic layer 250 is controlled by changing the proportion of gas as a function of time.

Then, a second layer of thin film (not shown) made of an electrical conduction material, for example, Pt / Ta and having a thickness of 0.1-2 μm, is formed on the upper part of the elastic layer 250 using the method of disintegration or vacuum vaporization. The second thin film layer is iso-cut in a set of second thin film electrodes 265 M x N using an acid drying method, wherein each of the thin film electrodes 265 is electrically disconnected from the second electrodes 265 of thin film, as shown in Figure 3H.

Then, a thin film electroplating layer 270, made of a piezoelectric material, for example, PZT, or an electrostrictive material, for example, PMN and having a thickness of 0.1-2 μm, is deposited at the top of the set of seconds. thin film electrodes 265 M x N using a vaporization method, a Sol-Gel, disintegration or CVD, as shown in Figure 3. The thin film eletrodisplaciva layer 270 is then treated with heat to allow a phase transition to take place, using a rapid thermal annealing (RTA) method.

Since the thin film eletrodisplacive layer 270 is thin enough, there is no need to hold it with sticks in case it is made of a piezoelectric material; since it can be held with sticks with an electrical signal applied during the operation of the thin film driven mirrors 301.

Subsequently, a first thin film layer 280, made of an electrical and light reflection material, for example aluminum (Al) or Silver (Ag) and having a thickness of 0.1-2 μm is formed on the part of the thin film eletrodisplacive layer 270, using a disintegration or vacuum vaporization method, whereby a multilayer structure 350 is formed as shown in Figure 3J.

In a next step, as shown in Figure 3K, the multilayer structure 350 is designed in a set 340 of M x N powered mirror structures 345 using a photolithography or laser cutting method, until the layer The thin film sacrificial is exposed, such that each of the driven mirror structures 345 has a tip (not shown) at a distal end thereof and an aperture for the etching reagent therethrough ( it is not shown). Each of the powered mirror structures 345 includes a first thin film electrode 285, a thin film eletrodisplacing member 275, the second thin layer electrode 265 and an elastic member 255. The first thin film electrode 286 is divided into a driving portion and a light reflection portion 190, 196, by a horizontal belt 287, wherein the horizontal belt 287 electrically disconnects the drive and reflex portions 190, 195. of light of it; the actuating portion 190 thereof is electrically connected to the floor.

In a subsequent step, a set of holes 290 M x N is created using an attack reaction method, wherein each of the orifices extends from the top of the thin film electroplating member 275 to the top of a terminal corresponding connection 214, as shown in Figure 3L.

In a next step, the duct 295 is formed by filling each of the holes 290 with a metal, for example, tungsten (W), using, for example, a lifting method, whereby a mirror assembly 330 is formed. M x N semi-finished actuators as shown in Figure 3M.

After the previous step, an incision (not shown) is made that has a depth of approximately one-third of the thickness of the active matrix 210 using a photolithographic method. This step is also known as semi-fragmentation.

The above step is followed by a total coating of each of the semifinished powered mirrors 335 with a thin film protection layer (not shown).

The thin film sacrificial layer 240 is then extracted using a reagent method for wet attack, using an acid or a chemical substance, for example, vaporization of hydrogen fluoride (HF), wherein the acid or chemical substance is inserted at through the opening for the attack reagent in each of the semifinished powered mirrors 335 and the spaces between the semifinished powered mirrors 335 and thus form an actuation space of each of the thin film driven mirrors 301.

Then, the thin film protection layer extracts it.

Finally, the active matrix 210 is completely fragmented into the desired shape, using a photolithography or laser cutting method, whereby a set 300 of thin film driven mirrors 301 M x N is formed, as shown in the Figure 3N.

In Figures 4A and 4D, the upper views of the first thin film electrode 285, the thin film electroplating member 275 and the elastic member 255, which constitute each of the thin film driven mirrors 301 are provided in accordance with FIG. invention respectively. Each of the thin film layers have a tip 105 at a distal end thereof and a reagent opening for attack 289. As illustrated in Figure 4C, the second thin film electrode 265 is electrically disconnected from the second electrode 265 of thin film in other 301 powered thin film mirrors in the 300 set.

In the inventive assembly 300 of the thin film driven mirrors 302 and the method of manufacturing thereof, the first thin film electrodes 285 in each of the thin film driven mirrors 301 are divided into drive and reflection portions of the light 190, 195, by means of a horizontal tape 287, and during the operation of each of the thin film driven mirrors 301, only the portions of the thin film electroplating member 275, the second thin film electrode 265 and the elastic member 255 located below the actuating portion 190 of the first thin film electrode 285 deforms, while the remaining portions remain flat, allowing the light reflecting portion 196 to reflect more efficiently the light ray incident on the same, with which the optical efficiency of the set 300 is increased.

Additionally, the extraction of thin film sacrificial layer 240 is usually followed by a rinsing of the acid or chemical substance that is used in the extraction thereof using a rinse which in turn is extracted by vaporization thereof. During the extraction of the rinse, the rinse meets at the tip 205 each of the thin film driven mirrors 301, facilitating easy removal thereof, thereby reducing the possibility of the elastic member 255 sticking to the active matrix 210, which in turn will help in the preservation of the structural integrity and operation of the thin film driven mirrors 301, increasing all the operation of the assembly 300.

Further, since the acid or chemical substance that is used in the thin film sacrificial layer 240 is inserted through the attack reagent openings 289, as well as the spaces between the drive structures 200, the sacrificial layer 240 of Thin film is extracted more efficiently and completely.

It should be mentioned that although the thin film operated mirrors 301 and the manufacturing method thereof were described in respect to the case where each of the thin film driven mirrors have a unimorph structure, the ideas presented above can be apply equally to the case in each of the thin film driven mirrors have a bimorpha structure; for the latter case, only additional electroplating and electrode layers and the formation thereof are involved.

While the present invention has been described with respect to certain preferred embodiments only, other modifications and variations may be made without departing from the scope of the present invention as set forth in the following claims.

Claims (17)

1. A set of thin film driven mirrors M x N where M and N are total numbers, for use in an optical projection system; The set comprises: an active matrix including a substrate, a set of transistors M x N and a set of connection terminals M x N, wherein each of the connection terminals is electrically connected to a corresponding transistor in the set of transistors; a stabilization layer formed in the upper part of the active matrix; a reagent brake layer for attack formed on the top of the stabilization layer, and; a set of drive structures M x N, each of the drive structures are provided with proximal and distant ends; each of the drive structures has a tip at the distal end thereof and an opening of reagent for attack traversing it; Each of the drive structures includes a thin film electrode, a thin film electroplating member, a second thin film electrode, an elastic member and a conduit, wherein the first thin film electrode is located on the upper part. of the electrodisplacive member of the thin film and divided into portions of actuation and light reflection by a horizontal ribbon; the horizontal tape electrically disconnects the drive and light reflection portions thereof; the driving portion thereof is electrically connected to the floor, thereby allowing the driving portion to the light reflecting portion thereof to function as a mirror or a tilt electrode and as a mirror respectively; the thin film electroplating member is placed on top of the second thin film electrode, the second thin film electrode is formed on the upper part of the elastic member; the second thin film electrode is electrically connected to a corresponding transistor through the conduit and the connection terminal, and electrically disconnected from the second thin film electrode in other thin film driven mirrors, thereby enabling its operation as an electrode sign; the elastic member is located at the bottom of the second thin film electrode and a lower portion at the proximal end thereof is joined on top of the active matrix with the reagent brake for attack and the stabilization layers partially intervene between they are mounted on a drive structure bracket, and the conduit extends from the upper part of the thin film electrodiaplating member to the upper part of the corresponding connection terminal, electrically connecting the second thin film electrode with the connection terminal.

2. The assembly of claim 1, wherein the stabilization layer is made of a phosphorus silicate glass (PSG) or silicon nitride.

3. The assembly of claim 1, wherein the brake layer of the reagent for attack is made of silicon nitride.

4. A method for manufacturing a set of thin film driven mirrors M x N, where M and N are total numbers and each of the thin film driven mirrors corresponds to a computer screen, for use in a projection system optical, the method comprises the steps of: providing an active matrix including a substrate, a set of connection terminals M x N and a set of M x N transistors, wherein each of the connection terminals is electrically connected to a corresponding transistor in a set of transistors; deposit a stabilization layer on top of the active matrix; depositing a reagent brake layer for attacks on the top of the stabilization layer; depositing a thin film sacrificial layer on top of the attack reagent brake layer, wherein the thin film sacrificial layer has a top surface; flattening the upper part of the surface of the thin film sacrificial layer; create a set of M x N pairs of empty cavities in the thin film sacrificial layer such that one of the empty slots in each pair encloses one of the connection terminals; depositing an elastic layer and a second layer of thin film successively on top of the thin film sacrificial layer including the empty cavities; iso-cutting the second thin film layer into a set of second thin film electrodes M x N wherein each of the second thin film electrodes is electrically disconnected from each other; depositing a thin film electrosplank layer and a thin film first layer successively on top of the set of second thin film electrodes M x N so that a multi-layered structure is formed; designing the multi-layered structure in a set of M x N powered mirror structures, until the thin film sacrificial layer is exposed, such that each of the driven mirror structures has a tip at a distant end thereof and an attack reactive reagent opening therethrough; each of the driven mirror structures includes a first thin film electrode; a thin film electroplating member, a second thin film electrode and an elastic member, wherein the first thin film electrode is divided into driving and light reflecting portions by means of a horizontal belt; the horizontal tape electrically disconnects the drive portion and the light reflection portion thereof; the actuating portion thereof is electrically connected to the floor; creating a set of holes M x N, each in the holes extending from the upper part of the thin film electrisplacing member of a corresponding connecting terminal; filling each of the holes with a metal and thereby forming a conduit therein, and thus forming a set of semifinished powered mirrors M x N; semi-fragment the active matrix by forming an incision in the active matrix; completely cover each of the semifinished powered mirrors with a thin film protective layer; extracting the thin film sacrificial layer using an acid or a chemical substance, wherein the acid or chemical substance is inserted into the reagent opening for attack in each of the semifinished powered mirrors and the spaces between the semifinished powered mirrors; extract the thin film protection layer, and; completely fragmenting the active matrix in a desirable way and thereby forming the set of thin film activated mirrors M x N.

5. The method of claim 4, wherein the stabilizing layer is made of a phosphorus silicate glass (PSG) or silicon nitride.

6. The method of claim 5, wherein the stabilization layer is formed with a thickness of 0.1-2 μm.

7. The method of claim 6, wherein the stabilization layer is formed using a CVD method or a spin coating method.

8. The method of claim 4, wherein the brake layer of the attack reagent is made of silicon nitride.

9. The method of claim 8, wherein the braking layer of the attack reagent is formed of a thickness of 0. 1 - 2 μ.

10. The method of claim 9, wherein the braking layer of the attack reagent is formed using a disintegration or CVD method.

11. The method of claim 4, wherein the top surface of the thin film sacrificial layer is flattened using a glass rotation method (SOG) or a chemical mechanical polishing method (CMP), followed by a scrubbing method.

12. The method of claim 4, wherein the set of empty cavities is created using a reagent method for dry or wet attack.

13. The method of claim 4, wherein the second thin film layer is iso-cut using the reagent method for dry attack.

14. The method of claim 8, wherein the thin film electroplating layer is heat treated using a rapid thermal annealing (RTA) method.

15. The method of claim 4, wherein the incision in the active matrix is formed with a depth of one third of the active matrix.

16. The method of claim 4, wherein the incision is formed using a photolithographic method.

17. The method of claim 4, wherein the active matrix is completely fragmented using a photolithographic or laser cutting method.