NL1007561A1 - Zelf pulserende halfgeleider laser. - Google Patents

Zelf pulserende halfgeleider laser.

Info

Publication number
NL1007561A1
NL1007561A1 NL1007561A NL1007561A NL1007561A1 NL 1007561 A1 NL1007561 A1 NL 1007561A1 NL 1007561 A NL1007561 A NL 1007561A NL 1007561 A NL1007561 A NL 1007561A NL 1007561 A1 NL1007561 A1 NL 1007561A1
Authority
NL
Netherlands
Prior art keywords
self
semiconductor laser
pulsating semiconductor
pulsating
laser
Prior art date
Application number
NL1007561A
Other languages
English (en)
Other versions
NL1007561C2 (nl
Inventor
Shoji Hirata
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL1007561A1 publication Critical patent/NL1007561A1/nl
Application granted granted Critical
Publication of NL1007561C2 publication Critical patent/NL1007561C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL1007561A 1996-11-19 1997-11-17 Zelf pulserende halfgeleider laser. NL1007561C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30853196A JP3381534B2 (ja) 1996-11-19 1996-11-19 自励発振型半導体レーザ
JP30853196 1996-11-19

Publications (2)

Publication Number Publication Date
NL1007561A1 true NL1007561A1 (nl) 1998-05-20
NL1007561C2 NL1007561C2 (nl) 1998-09-15

Family

ID=17982162

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1007561A NL1007561C2 (nl) 1996-11-19 1997-11-17 Zelf pulserende halfgeleider laser.

Country Status (4)

Country Link
US (1) US5966397A (nl)
JP (1) JP3381534B2 (nl)
NL (1) NL1007561C2 (nl)
TW (1) TW346694B (nl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4147602B2 (ja) * 1998-02-02 2008-09-10 ソニー株式会社 自励発振型半導体レーザ
JPH11354880A (ja) * 1998-06-03 1999-12-24 Rohm Co Ltd 半導体レーザ素子およびその製造方法
JP3459599B2 (ja) 1999-09-24 2003-10-20 三洋電機株式会社 半導体発光素子
JP4618465B2 (ja) * 2000-04-04 2011-01-26 ソニー株式会社 ｐ型窒化物系ＩＩＩ−Ｖ族化合物半導体の製造方法および半導体素子の製造方法
IES20010362A2 (en) * 2000-04-12 2001-10-17 Trinity College Dublin A self-pulsating laser diode and a method for causing a laser diode to output light pulses
JP2001345519A (ja) * 2000-06-01 2001-12-14 Nichia Chem Ind Ltd レーザ素子
JP4599687B2 (ja) * 2000-08-08 2010-12-15 ソニー株式会社 レーザダイオード、半導体発光装置および製造方法
JP2002184581A (ja) 2000-12-13 2002-06-28 Sanyo Electric Co Ltd 有機発光素子
FR2833419B1 (fr) * 2001-12-07 2006-09-01 Thales Sa Laser unipolaire a cascade quantique de puissance a courant de seuil reduit
US7573688B2 (en) * 2002-06-07 2009-08-11 Science Research Laboratory, Inc. Methods and systems for high current semiconductor diode junction protection
US7199398B2 (en) * 2002-11-20 2007-04-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
KR100568314B1 (ko) 2004-09-24 2006-04-05 삼성전기주식회사 자려발진형 반도체 레이저 및 그 제조방법
JP5735216B2 (ja) * 2009-02-27 2015-06-17 日亜化学工業株式会社 窒化物半導体レーザ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299770A (ja) * 1992-04-24 1993-11-12 Sharp Corp 半導体レーザ装置
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH0745902A (ja) * 1993-07-28 1995-02-14 Mitsubishi Electric Corp 半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
JP3381534B2 (ja) 2003-03-04
JPH10150240A (ja) 1998-06-02
US5966397A (en) 1999-10-12
NL1007561C2 (nl) 1998-09-15
TW346694B (en) 1998-12-01

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PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20030601