TW346694B - Self-pulsation semiconductor laser - Google Patents

Self-pulsation semiconductor laser

Info

Publication number
TW346694B
TW346694B TW086117198A TW86117198A TW346694B TW 346694 B TW346694 B TW 346694B TW 086117198 A TW086117198 A TW 086117198A TW 86117198 A TW86117198 A TW 86117198A TW 346694 B TW346694 B TW 346694B
Authority
TW
Taiwan
Prior art keywords
refractive index
layer formed
semiconductor laser
cladding layer
self
Prior art date
Application number
TW086117198A
Other languages
English (en)
Inventor
Teruji Hirata
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW346694B publication Critical patent/TW346694B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW086117198A 1996-11-19 1997-11-18 Self-pulsation semiconductor laser TW346694B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30853196A JP3381534B2 (ja) 1996-11-19 1996-11-19 自励発振型半導体レーザ

Publications (1)

Publication Number Publication Date
TW346694B true TW346694B (en) 1998-12-01

Family

ID=17982162

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117198A TW346694B (en) 1996-11-19 1997-11-18 Self-pulsation semiconductor laser

Country Status (4)

Country Link
US (1) US5966397A (zh)
JP (1) JP3381534B2 (zh)
NL (1) NL1007561C2 (zh)
TW (1) TW346694B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4147602B2 (ja) * 1998-02-02 2008-09-10 ソニー株式会社 自励発振型半導体レーザ
JPH11354880A (ja) * 1998-06-03 1999-12-24 Rohm Co Ltd 半導体レーザ素子およびその製造方法
JP3459599B2 (ja) * 1999-09-24 2003-10-20 三洋電機株式会社 半導体発光素子
JP4618465B2 (ja) * 2000-04-04 2011-01-26 ソニー株式会社 ｐ型窒化物系ＩＩＩ−Ｖ族化合物半導体の製造方法および半導体素子の製造方法
US6804272B2 (en) 2000-04-12 2004-10-12 The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Self-pulsating laser diode and a method for causing a laser diode to output light pulses
JP2001345519A (ja) * 2000-06-01 2001-12-14 Nichia Chem Ind Ltd レーザ素子
JP4599687B2 (ja) * 2000-08-08 2010-12-15 ソニー株式会社 レーザダイオード、半導体発光装置および製造方法
JP2002184581A (ja) 2000-12-13 2002-06-28 Sanyo Electric Co Ltd 有機発光素子
FR2833419B1 (fr) * 2001-12-07 2006-09-01 Thales Sa Laser unipolaire a cascade quantique de puissance a courant de seuil reduit
US7573688B2 (en) * 2002-06-07 2009-08-11 Science Research Laboratory, Inc. Methods and systems for high current semiconductor diode junction protection
US7199398B2 (en) * 2002-11-20 2007-04-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
KR100568314B1 (ko) 2004-09-24 2006-04-05 삼성전기주식회사 자려발진형 반도체 레이저 및 그 제조방법
JP5735216B2 (ja) * 2009-02-27 2015-06-17 日亜化学工業株式会社 窒化物半導体レーザ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299770A (ja) * 1992-04-24 1993-11-12 Sharp Corp 半導体レーザ装置
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH0745902A (ja) * 1993-07-28 1995-02-14 Mitsubishi Electric Corp 半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
NL1007561A1 (nl) 1998-05-20
US5966397A (en) 1999-10-12
JP3381534B2 (ja) 2003-03-04
NL1007561C2 (nl) 1998-09-15
JPH10150240A (ja) 1998-06-02

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