NL1003538C2 - Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat. - Google Patents

Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat. Download PDF

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Publication number
NL1003538C2
NL1003538C2 NL1003538A NL1003538A NL1003538C2 NL 1003538 C2 NL1003538 C2 NL 1003538C2 NL 1003538 A NL1003538 A NL 1003538A NL 1003538 A NL1003538 A NL 1003538A NL 1003538 C2 NL1003538 C2 NL 1003538C2
Authority
NL
Netherlands
Prior art keywords
side parts
semiconductor substrate
side part
wafer
substrate
Prior art date
Application number
NL1003538A
Other languages
English (en)
Dutch (nl)
Inventor
Ernst Hendrik August Granneman
Frank Huussen
Original Assignee
Advanced Semiconductor Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL1003538A priority Critical patent/NL1003538C2/nl
Application filed by Advanced Semiconductor Mat filed Critical Advanced Semiconductor Mat
Priority to KR1019980710838A priority patent/KR100335282B1/ko
Priority to AU33617/97A priority patent/AU3361797A/en
Priority to PCT/NL1997/000398 priority patent/WO1998001890A1/fr
Priority to JP10505093A priority patent/JPH11514154A/ja
Priority to EP97929595A priority patent/EP0910868B1/fr
Priority to DE69731199T priority patent/DE69731199T2/de
Priority to TW087100333A priority patent/TW493214B/zh
Application granted granted Critical
Publication of NL1003538C2 publication Critical patent/NL1003538C2/nl
Priority to US09/717,485 priority patent/US6461439B1/en
Priority to US10/603,515 priority patent/US6805749B2/en
Priority to US10/932,633 priority patent/US7312156B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
NL1003538A 1996-07-08 1996-07-08 Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat. NL1003538C2 (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL1003538A NL1003538C2 (nl) 1996-07-08 1996-07-08 Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.
AU33617/97A AU3361797A (en) 1996-07-08 1997-07-08 Method and apparatus for contactless treatment of a semiconductor substrate in wafer form
PCT/NL1997/000398 WO1998001890A1 (fr) 1996-07-08 1997-07-08 Procede et dispositif de traitement sans contact d'un substrat semi-conducteur sous forme de plaquette
JP10505093A JPH11514154A (ja) 1996-07-08 1997-07-08 ウエーファーの形の半導体基質を無接触的に処理する方法および装置
KR1019980710838A KR100335282B1 (ko) 1996-07-08 1997-07-08 반도체웨이퍼기판의비접촉식처리장치
EP97929595A EP0910868B1 (fr) 1996-07-08 1997-07-08 Procede et dispositif de traitement sans contact d'un substrat semi-conducteur sous forme de plaquette
DE69731199T DE69731199T2 (de) 1996-07-08 1997-07-08 Verfahren und einrichtung zur berührungslose behandlung eines scheiben förmiges halbleitersubstrats
TW087100333A TW493214B (en) 1996-07-08 1998-01-09 Method and apparatus for contactless treatment of a semiconductor substrate in wafer form
US09/717,485 US6461439B1 (en) 1996-07-08 2000-11-20 Apparatus for supporting a semiconductor wafer during processing
US10/603,515 US6805749B2 (en) 1996-07-08 2003-06-24 Method and apparatus for supporting a semiconductor wafer during processing
US10/932,633 US7312156B2 (en) 1996-07-08 2004-09-02 Method and apparatus for supporting a semiconductor wafer during processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1003538 1996-07-08
NL1003538A NL1003538C2 (nl) 1996-07-08 1996-07-08 Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.

Publications (1)

Publication Number Publication Date
NL1003538C2 true NL1003538C2 (nl) 1998-01-12

Family

ID=19763169

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1003538A NL1003538C2 (nl) 1996-07-08 1996-07-08 Werkwijze en inrichting voor het contactloos behandelen van een schijfvormig halfgeleidersubstraat.

Country Status (8)

Country Link
EP (1) EP0910868B1 (fr)
JP (1) JPH11514154A (fr)
KR (1) KR100335282B1 (fr)
AU (1) AU3361797A (fr)
DE (1) DE69731199T2 (fr)
NL (1) NL1003538C2 (fr)
TW (1) TW493214B (fr)
WO (1) WO1998001890A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
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WO2000042638A2 (fr) * 1999-01-13 2000-07-20 Asm International N.V. Dispositif servant a positionner une tranche

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US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
NL1011487C2 (nl) 1999-03-08 2000-09-18 Koninkl Philips Electronics Nv Werkwijze en inrichting voor het roteren van een wafer.
NL1012004C2 (nl) 1999-05-07 2000-11-13 Asm Int Werkwijze voor het verplaatsen van wafers alsmede ring.
US6803546B1 (en) 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
NL1013938C2 (nl) * 1999-12-23 2001-06-26 Asm Int Inrichting voor het behandelen van een wafer.
NL1013984C2 (nl) * 1999-12-29 2001-07-02 Asm Int Werkwijze en inrichting voor het behandelen van substraten.
NL1013989C2 (nl) 1999-12-29 2001-07-02 Asm Int Werkwijze en inrichting voor het behandelen van een wafer.
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6679951B2 (en) 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
KR100775159B1 (ko) 2000-05-15 2007-11-12 에이에스엠 인터내셔널 엔.붸. 집적회로의 생산 공정
DE10024710A1 (de) 2000-05-18 2001-12-20 Steag Rtp Systems Gmbh Einstellung von Defektprofilen in Kristallen oder kristallähnlichen Strukturen
WO2001099156A1 (fr) 2000-06-16 2001-12-27 Applied Materials, Inc. Nettoyeur carrousel reconfigurable integre pour nettoyage au mouille ou a sec d'un substrat
WO2002005323A2 (fr) * 2000-07-06 2002-01-17 Applied Materials, Inc. Traitement thermique de substrat
US6592942B1 (en) 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
JP2002343708A (ja) * 2001-05-21 2002-11-29 Toshiba Corp 基板処理装置および熱処理方法
JP2004536272A (ja) * 2001-06-08 2004-12-02 アイクストロン、アーゲー 扁平物体の短時間熱処理方法と装置
US6899111B2 (en) 2001-06-15 2005-05-31 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
US6887803B2 (en) * 2001-11-08 2005-05-03 Wafermasters, Inc. Gas-assisted rapid thermal processing
US7104578B2 (en) 2002-03-15 2006-09-12 Asm International N.V. Two level end effector
US6952889B2 (en) * 2002-11-05 2005-10-11 Wafermasters, Inc. Forced convection assisted rapid thermal furnace
US7153772B2 (en) 2003-06-12 2006-12-26 Asm International N.V. Methods of forming silicide films in semiconductor devices
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
US7022627B2 (en) 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US7410355B2 (en) 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US6883250B1 (en) 2003-11-04 2005-04-26 Asm America, Inc. Non-contact cool-down station for wafers
US6940047B2 (en) 2003-11-14 2005-09-06 Asm International N.V. Heat treatment apparatus with temperature control system
US7329114B2 (en) 2004-01-20 2008-02-12 Komag, Inc. Isothermal imprint embossing system
US7217670B2 (en) 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
DE102007053108A1 (de) 2007-05-02 2008-11-06 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zum thermischen Behandeln von Wafern
US7927942B2 (en) 2008-12-19 2011-04-19 Asm International N.V. Selective silicide process
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
JP2011091386A (ja) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd 熱処理装置、熱処理方法及び半導体装置の作製方法
US8402638B1 (en) 2009-11-06 2013-03-26 Wd Media, Inc. Press system with embossing foil free to expand for nano-imprinting of recording media
US9330685B1 (en) 2009-11-06 2016-05-03 WD Media, LLC Press system for nano-imprinting of recording media with a two step pressing method
US8496466B1 (en) 2009-11-06 2013-07-30 WD Media, LLC Press system with interleaved embossing foil holders for nano-imprinting of recording media
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
WO2017156758A1 (fr) * 2016-03-18 2017-09-21 Acm Research (Shanghai) Inc. Appareil de traitement thermique de substrats
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
KR102695104B1 (ko) 2019-08-16 2024-08-14 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 방법 및 장치
CN112701078A (zh) * 2020-12-28 2021-04-23 广东先导先进材料股份有限公司 晶片取放装置

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JPS59215718A (ja) * 1983-05-23 1984-12-05 Kokusai Electric Co Ltd 半導体基板の赤外線熱処理装置
US4622918A (en) * 1983-01-31 1986-11-18 Integrated Automation Limited Module for high vacuum processing
US4958061A (en) * 1988-06-27 1990-09-18 Tokyo Electron Limited Method and apparatus for heat-treating a substrate

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NL8103979A (nl) * 1981-08-26 1983-03-16 Bok Edward Methode en inrichting voor het aanbrengen van een film vloeibaar medium op een substraat.
NL8200753A (nl) * 1982-02-24 1983-09-16 Integrated Automation Methode en inrichting voor het aanbrengen van een coating op een substraat of tape.
NL8203318A (nl) * 1982-08-24 1984-03-16 Integrated Automation Inrichting voor processing van substraten.
NL8402410A (nl) * 1984-08-01 1986-03-03 Bok Edward Verbeterde proces installatie met double-floating transport en processing van wafers en tape.

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US4622918A (en) * 1983-01-31 1986-11-18 Integrated Automation Limited Module for high vacuum processing
JPS59215718A (ja) * 1983-05-23 1984-12-05 Kokusai Electric Co Ltd 半導体基板の赤外線熱処理装置
US4958061A (en) * 1988-06-27 1990-09-18 Tokyo Electron Limited Method and apparatus for heat-treating a substrate

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000042638A2 (fr) * 1999-01-13 2000-07-20 Asm International N.V. Dispositif servant a positionner une tranche
NL1011017C2 (nl) * 1999-01-13 2000-07-31 Asm Int Inrichting voor het positioneren van een wafer.
WO2000042638A3 (fr) * 1999-01-13 2002-08-22 Asm Int Dispositif servant a positionner une tranche
US6719499B1 (en) 1999-01-13 2004-04-13 Asm International N.V. Device for positioning a wafer

Also Published As

Publication number Publication date
EP0910868B1 (fr) 2004-10-13
EP0910868A1 (fr) 1999-04-28
TW493214B (en) 2002-07-01
AU3361797A (en) 1998-02-02
JPH11514154A (ja) 1999-11-30
KR20000022406A (ko) 2000-04-25
KR100335282B1 (ko) 2002-07-18
WO1998001890A1 (fr) 1998-01-15
DE69731199T2 (de) 2005-03-10
DE69731199D1 (de) 2004-11-18

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Effective date: 20010201