MY6900255A - Improvements relating to semiconductor devices - Google Patents

Improvements relating to semiconductor devices

Info

Publication number
MY6900255A
MY6900255A MY1969255A MY6900255A MY6900255A MY 6900255 A MY6900255 A MY 6900255A MY 1969255 A MY1969255 A MY 1969255A MY 6900255 A MY6900255 A MY 6900255A MY 6900255 A MY6900255 A MY 6900255A
Authority
MY
Malaysia
Prior art keywords
molybdenum
layer
aluminium
gold
silicon
Prior art date
Application number
MY1969255A
Other languages
English (en)
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US363197A external-priority patent/US3290570A/en
Priority claimed from US405461A external-priority patent/US3341753A/en
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of MY6900255A publication Critical patent/MY6900255A/xx

Links

Classifications

    • H10P95/00
    • H10W20/40
    • H10W20/425
    • H10W72/90
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • H10W72/01938
    • H10W72/01951
    • H10W72/075
    • H10W72/536
    • H10W72/5363
    • H10W72/5522
    • H10W72/5524
    • H10W72/59
    • H10W72/923
    • H10W72/952
    • H10W90/753
    • H10W90/754
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611Oxide-containing component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826Group VIB metal-base component

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
MY1969255A 1964-04-28 1969-12-31 Improvements relating to semiconductor devices MY6900255A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US363197A US3290570A (en) 1964-04-28 1964-04-28 Multilevel expanded metallic contacts for semiconductor devices
US405461A US3341753A (en) 1964-10-21 1964-10-21 Metallic contacts for semiconductor devices

Publications (1)

Publication Number Publication Date
MY6900255A true MY6900255A (en) 1969-12-31

Family

ID=27001945

Family Applications (1)

Application Number Title Priority Date Filing Date
MY1969255A MY6900255A (en) 1964-04-28 1969-12-31 Improvements relating to semiconductor devices

Country Status (4)

Country Link
FR (1) FR1439326A (enExample)
GB (1) GB1104804A (enExample)
MY (1) MY6900255A (enExample)
NL (1) NL145989B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
FR2170846B1 (enExample) * 1972-02-03 1975-10-24 Garyainov Stanislav
CN111739806B (zh) * 2020-07-01 2024-09-20 中国科学院上海技术物理研究所 一种小中心距焦平面探测器的铟球阵列制造方法

Also Published As

Publication number Publication date
FR1439326A (fr) 1966-05-20
NL145989B (nl) 1975-05-15
GB1104804A (en) 1968-02-28
NL6505284A (enExample) 1965-10-29

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