MY173413A - High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers - Google Patents
High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbersInfo
- Publication number
- MY173413A MY173413A MYPI2014700259A MYPI2014700259A MY173413A MY 173413 A MY173413 A MY 173413A MY PI2014700259 A MYPI2014700259 A MY PI2014700259A MY PI2014700259 A MYPI2014700259 A MY PI2014700259A MY 173413 A MY173413 A MY 173413A
- Authority
- MY
- Malaysia
- Prior art keywords
- modules
- crystalline semiconductor
- photovoltaic cells
- solar photovoltaic
- efficiency solar
- Prior art date
Links
- 239000006096 absorbing agent Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000002787 reinforcement Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F19/85—Protective back sheets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
- H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
- H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
- H10F77/1665—Amorphous semiconductors including only Group IV materials including Group IV-IV materials, e.g. SiGe or SiC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
- H10F77/937—Busbar structures for modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161521743P | 2011-08-09 | 2011-08-09 | |
| US201161521754P | 2011-08-09 | 2011-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY173413A true MY173413A (en) | 2020-01-23 |
Family
ID=47669135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2014700259A MY173413A (en) | 2011-08-09 | 2012-08-09 | High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9842949B2 (enExample) |
| EP (1) | EP2742536A4 (enExample) |
| JP (2) | JP2014525671A (enExample) |
| KR (1) | KR20140064854A (enExample) |
| CN (1) | CN103918088B (enExample) |
| AU (1) | AU2012294932B2 (enExample) |
| MY (1) | MY173413A (enExample) |
| WO (1) | WO2013022479A2 (enExample) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| US20130337601A1 (en) * | 2012-02-29 | 2013-12-19 | Solexel, Inc. | Structures and methods for high efficiency compound semiconductor solar cells |
| NL2009382C2 (en) * | 2012-08-29 | 2014-03-18 | M4Si B V | Method for manufacturing a solar cell and solar cell obtained therewith. |
| US9853171B2 (en) * | 2012-09-05 | 2017-12-26 | Zinniatek Limited | Photovoltaic devices with three dimensional surface features and methods of making the same |
| US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
| US9515217B2 (en) | 2012-11-05 | 2016-12-06 | Solexel, Inc. | Monolithically isled back contact back junction solar cells |
| US9293624B2 (en) * | 2012-12-10 | 2016-03-22 | Sunpower Corporation | Methods for electroless plating of a solar cell metallization layer |
| US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
| ES2705199T3 (es) * | 2013-01-17 | 2019-03-22 | Atotech Deutschland Gmbh | Contactos eléctricos galvanizados para módulos solares |
| US20150236638A1 (en) * | 2013-04-13 | 2015-08-20 | Solexel, Inc. | Solar photovoltaic module power control and status monitoring system utilizing laminateembedded remote access module switch |
| US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
| US9502596B2 (en) * | 2013-06-28 | 2016-11-22 | Sunpower Corporation | Patterned thin foil |
| US10553738B2 (en) * | 2013-08-21 | 2020-02-04 | Sunpower Corporation | Interconnection of solar cells in a solar cell module |
| CN105900248A (zh) * | 2013-11-11 | 2016-08-24 | 索莱克赛尔公司 | 电介质钝化的金属绝缘体光伏太阳能电池 |
| WO2015084824A1 (en) * | 2013-12-02 | 2015-06-11 | Applied Materials, Inc. | Methods for substrate processing |
| JPWO2015145886A1 (ja) * | 2014-03-25 | 2017-04-13 | パナソニックIpマネジメント株式会社 | 電極パターンの形成方法及び太陽電池の製造方法 |
| US10707364B2 (en) * | 2014-05-30 | 2020-07-07 | University Of Central Florida Research Foundation, Inc. | Solar cell with absorber substrate bonded between substrates |
| US9825191B2 (en) * | 2014-06-27 | 2017-11-21 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
| CN105742403A (zh) * | 2014-12-11 | 2016-07-06 | 上海晶玺电子科技有限公司 | 背接触电池和双面电池的金属化方法 |
| US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
| JP6401094B2 (ja) * | 2015-03-27 | 2018-10-03 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| KR102550458B1 (ko) * | 2015-05-13 | 2023-07-04 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
| US9859451B2 (en) | 2015-06-26 | 2018-01-02 | International Business Machines Corporation | Thin film photovoltaic cell with back contacts |
| WO2017068959A1 (ja) * | 2015-10-21 | 2017-04-27 | シャープ株式会社 | 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法 |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9620466B1 (en) * | 2015-11-30 | 2017-04-11 | Infineon Technologies Ag | Method of manufacturing an electronic device having a contact pad with partially sealed pores |
| US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
| US9496429B1 (en) * | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| DE102016107802A1 (de) * | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
| KR102257824B1 (ko) * | 2016-12-05 | 2021-05-28 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
| WO2019017281A1 (ja) * | 2017-07-18 | 2019-01-24 | シャープ株式会社 | 光電変換装置 |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| KR102470791B1 (ko) * | 2017-12-07 | 2022-11-28 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 패널 |
| CN109979798B (zh) * | 2017-12-27 | 2022-02-25 | 无锡华润微电子有限公司 | 碳化硅晶圆湿法腐蚀方法 |
| US10593824B2 (en) * | 2018-02-02 | 2020-03-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultra-thin flexible rear-contact Si solar cells and methods for manufacturing the same |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| DE102018214778A1 (de) * | 2018-08-30 | 2020-03-05 | Siemens Aktiengesellschaft | Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul |
| CN109860312B (zh) * | 2018-11-27 | 2021-10-22 | 北京捷宸阳光科技发展有限公司 | 用于p型晶体硅太阳能电池硼扩散背钝化工艺 |
| CN112095147A (zh) * | 2019-06-02 | 2020-12-18 | 尹翠哲 | 一种生产铸造单晶时籽晶层的保护方法 |
| US12062582B2 (en) | 2020-01-15 | 2024-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices |
| CN114188435B (zh) * | 2020-09-14 | 2024-01-12 | 一道新能源科技股份有限公司 | 一种太阳能电池制备方法及太阳能电池 |
| CN113512742B (zh) * | 2021-04-23 | 2023-07-07 | 南昌航空大学 | 一种高温合金表面的预处理方法和一种高温合金表面电沉积的方法 |
| IL311088A (en) * | 2021-08-31 | 2024-04-01 | Solarpaint Ltd | Improved flexible solar panels and photovoltaic devices, and methods and systems for their manufacture |
| US11875996B2 (en) | 2021-09-23 | 2024-01-16 | Applied Materials, Inc. | Methods for electrochemical deposition of isolated seed layer areas |
| CN114499277B (zh) * | 2022-01-21 | 2024-07-16 | 西安交通大学 | 一种基于二维材料的高频电化学驱动器及其制备方法 |
| CN114512555A (zh) * | 2022-04-18 | 2022-05-17 | 浙江晶科能源有限公司 | 太阳能电池的制备方法 |
| CN115458612B (zh) * | 2022-10-27 | 2024-08-20 | 通威太阳能(眉山)有限公司 | 一种太阳电池及其制备方法 |
| CN117976744B (zh) * | 2024-03-21 | 2024-07-02 | 金阳(泉州)新能源科技有限公司 | 无单晶硅衬底的背接触电池及其制备方法和柔性电池组件 |
| CN118507598B (zh) * | 2024-07-17 | 2024-10-18 | 天合光能股份有限公司 | 太阳能电池及其制作方法、光伏组件 |
| CN119451281B (zh) * | 2025-01-08 | 2025-03-21 | 金阳(泉州)新能源科技有限公司 | 一种背接触电池的后制绒制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4329183B2 (ja) * | 1999-10-14 | 2009-09-09 | ソニー株式会社 | 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法 |
| JP4134503B2 (ja) * | 2000-10-11 | 2008-08-20 | 松下電器産業株式会社 | 回路形成基板の製造方法 |
| US6998288B1 (en) * | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
| FR2877144B1 (fr) * | 2004-10-22 | 2006-12-08 | Solarforce Soc Par Actions Sim | Structure multicouche monolithique pour la connexion de cellules a semi-conducteur |
| JP2008041679A (ja) * | 2006-08-01 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 回路形成基板の製造方法 |
| JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
| WO2008065918A1 (fr) * | 2006-12-01 | 2008-06-05 | Sharp Kabushiki Kaisha | Cellule solaire et son procédé de fabrication |
| TW200939510A (en) * | 2007-11-19 | 2009-09-16 | Applied Materials Inc | Solar cell contact formation process using a patterned etchant material |
| KR101155343B1 (ko) * | 2008-02-25 | 2012-06-11 | 엘지전자 주식회사 | 백 콘택 태양전지의 제조 방법 |
| WO2009134939A2 (en) * | 2008-04-29 | 2009-11-05 | Advent Solar, Inc. | Photovoltaic modules manufactured using monolithic module assembly techniques |
| NL2001727C2 (nl) * | 2008-06-26 | 2009-12-29 | Eurotron B V | Werkwijze voor het vervaardigen van een zonnepaneel, alsmede halffabrikaat daarvoor. |
| US8309446B2 (en) * | 2008-07-16 | 2012-11-13 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a doping layer mask |
| DE102008062286A1 (de) * | 2008-12-03 | 2010-06-10 | P-D Industriegesellschaft mbH Betriebsstätte: Werk Bitterfeld-Laminate | Solarmodul |
| KR101135591B1 (ko) * | 2009-03-11 | 2012-04-19 | 엘지전자 주식회사 | 태양 전지 및 태양 전지 모듈 |
| WO2010111107A2 (en) * | 2009-03-26 | 2010-09-30 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
| JP5625311B2 (ja) * | 2009-10-20 | 2014-11-19 | 凸版印刷株式会社 | 太陽電池用裏面保護シート及び太陽電池モジュール |
| JP5459596B2 (ja) * | 2009-10-28 | 2014-04-02 | 凸版印刷株式会社 | 太陽電池用裏面保護シート及び太陽電池モジュール |
| US8119901B2 (en) * | 2009-11-03 | 2012-02-21 | Lg Electronics Inc. | Solar cell module having a conductive pattern part |
| EP2510552A4 (en) * | 2009-12-09 | 2014-11-05 | Solexel Inc | HIGHLY EFFICIENT PHOTOVOLTAIC BACK CONTACT STRUCTURES FOR SOLAR CELLS AND METHOD OF MANUFACTURING THEM BY USING SEMICONDUCTOR WAFERS |
-
2012
- 2012-08-09 KR KR1020147006376A patent/KR20140064854A/ko not_active Ceased
- 2012-08-09 MY MYPI2014700259A patent/MY173413A/en unknown
- 2012-08-09 AU AU2012294932A patent/AU2012294932B2/en not_active Ceased
- 2012-08-09 CN CN201280049551.6A patent/CN103918088B/zh not_active Expired - Fee Related
- 2012-08-09 JP JP2014525003A patent/JP2014525671A/ja active Pending
- 2012-08-09 EP EP12822670.1A patent/EP2742536A4/en not_active Withdrawn
- 2012-08-09 WO PCT/US2012/000348 patent/WO2013022479A2/en not_active Ceased
- 2012-08-09 US US13/807,631 patent/US9842949B2/en not_active Expired - Fee Related
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2017
- 2017-06-20 JP JP2017120887A patent/JP2017195401A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014525671A (ja) | 2014-09-29 |
| EP2742536A2 (en) | 2014-06-18 |
| US20150020877A1 (en) | 2015-01-22 |
| AU2012294932A1 (en) | 2014-03-27 |
| CN103918088B (zh) | 2017-07-04 |
| AU2012294932B2 (en) | 2016-08-11 |
| JP2017195401A (ja) | 2017-10-26 |
| KR20140064854A (ko) | 2014-05-28 |
| US9842949B2 (en) | 2017-12-12 |
| CN103918088A (zh) | 2014-07-09 |
| EP2742536A4 (en) | 2015-08-12 |
| WO2013022479A2 (en) | 2013-02-14 |
| WO2013022479A3 (en) | 2013-05-16 |
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