CN103918088B - 利用细晶半导体吸收体的高效太阳能光伏电池及模块 - Google Patents

利用细晶半导体吸收体的高效太阳能光伏电池及模块 Download PDF

Info

Publication number
CN103918088B
CN103918088B CN201280049551.6A CN201280049551A CN103918088B CN 103918088 B CN103918088 B CN 103918088B CN 201280049551 A CN201280049551 A CN 201280049551A CN 103918088 B CN103918088 B CN 103918088B
Authority
CN
China
Prior art keywords
layer
metal
silicon
contact
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280049551.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103918088A (zh
Inventor
M·M·穆斯利赫
P·卡普尔
K·J·克拉默
V·V·雷纳
S·苏特
A·德什潘德
A·卡尔卡特拉
G·奥尔森
K·曼特齐
T·斯塔尔库普
G·D·卡米安
D·X·王
Y·苏
M·温格特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of CN103918088A publication Critical patent/CN103918088A/zh
Application granted granted Critical
Publication of CN103918088B publication Critical patent/CN103918088B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1665—Amorphous semiconductors including only Group IV materials including Group IV-IV materials, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electroluminescent Light Sources (AREA)
CN201280049551.6A 2011-08-09 2012-08-09 利用细晶半导体吸收体的高效太阳能光伏电池及模块 Expired - Fee Related CN103918088B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161521754P 2011-08-09 2011-08-09
US201161521743P 2011-08-09 2011-08-09
US61/521,754 2011-08-09
US61/521,743 2011-08-09
PCT/US2012/000348 WO2013022479A2 (en) 2011-08-09 2012-08-09 High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers

Publications (2)

Publication Number Publication Date
CN103918088A CN103918088A (zh) 2014-07-09
CN103918088B true CN103918088B (zh) 2017-07-04

Family

ID=47669135

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280049551.6A Expired - Fee Related CN103918088B (zh) 2011-08-09 2012-08-09 利用细晶半导体吸收体的高效太阳能光伏电池及模块

Country Status (8)

Country Link
US (1) US9842949B2 (enExample)
EP (1) EP2742536A4 (enExample)
JP (2) JP2014525671A (enExample)
KR (1) KR20140064854A (enExample)
CN (1) CN103918088B (enExample)
AU (1) AU2012294932B2 (enExample)
MY (1) MY173413A (enExample)
WO (1) WO2013022479A2 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP6199323B2 (ja) * 2012-02-29 2017-09-20 ソレクセル、インコーポレイテッド 効率的化合物の半導体太陽電池のための構造及び方法
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
CN104769726B (zh) * 2012-09-05 2018-10-09 兹尼亚泰克有限公司 具有三维表面特征的光伏设备及制造该光伏设备的方法
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9515217B2 (en) 2012-11-05 2016-12-06 Solexel, Inc. Monolithically isled back contact back junction solar cells
US9293624B2 (en) * 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
ES2705199T3 (es) * 2013-01-17 2019-03-22 Atotech Deutschland Gmbh Contactos eléctricos galvanizados para módulos solares
CN105308856A (zh) * 2013-04-13 2016-02-03 索莱克赛尔公司 利用叠层嵌入式远程访问模块开关的太阳能光伏模块功率控制和状态监控系统
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9502596B2 (en) * 2013-06-28 2016-11-22 Sunpower Corporation Patterned thin foil
US10553738B2 (en) * 2013-08-21 2020-02-04 Sunpower Corporation Interconnection of solar cells in a solar cell module
US20150129030A1 (en) * 2013-11-11 2015-05-14 Solexel, Inc. Dielectric-passivated metal insulator photovoltaic solar cells
US20150155407A1 (en) * 2013-12-02 2015-06-04 Applied Materials, Inc. Methods for substrate processing
WO2015145886A1 (ja) * 2014-03-25 2015-10-01 パナソニックＩｐマネジメント株式会社 電極パターンの形成方法及び太陽電池の製造方法
US10707364B2 (en) * 2014-05-30 2020-07-07 University Of Central Florida Research Foundation, Inc. Solar cell with absorber substrate bonded between substrates
US9825191B2 (en) * 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
CN105742403A (zh) * 2014-12-11 2016-07-06 上海晶玺电子科技有限公司 背接触电池和双面电池的金属化方法
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
JP6401094B2 (ja) * 2015-03-27 2018-10-03 信越化学工業株式会社 太陽電池の製造方法
KR102550458B1 (ko) * 2015-05-13 2023-07-04 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
US9859451B2 (en) 2015-06-26 2018-01-02 International Business Machines Corporation Thin film photovoltaic cell with back contacts
WO2017068959A1 (ja) * 2015-10-21 2017-04-27 シャープ株式会社 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9620466B1 (en) * 2015-11-30 2017-04-11 Infineon Technologies Ag Method of manufacturing an electronic device having a contact pad with partially sealed pores
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) * 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
DE102016107802A1 (de) * 2016-04-27 2017-11-02 Universität Stuttgart Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium
KR102257824B1 (ko) * 2016-12-05 2021-05-28 엘지전자 주식회사 태양 전지 제조 방법
JP6971318B2 (ja) * 2017-07-18 2021-11-24 シャープ株式会社 光電変換装置
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
KR102470791B1 (ko) * 2017-12-07 2022-11-28 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 패널
CN109979798B (zh) * 2017-12-27 2022-02-25 无锡华润微电子有限公司 碳化硅晶圆湿法腐蚀方法
WO2019152770A1 (en) * 2018-02-02 2019-08-08 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Ultra-thin flexible rear-contact si solar cells and methods for manufacturing the same
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
DE102018214778A1 (de) * 2018-08-30 2020-03-05 Siemens Aktiengesellschaft Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul
CN109860312B (zh) * 2018-11-27 2021-10-22 北京捷宸阳光科技发展有限公司 用于p型晶体硅太阳能电池硼扩散背钝化工艺
WO2023031916A1 (en) * 2021-08-31 2023-03-09 Solarpaint Ltd. Enhanced flexible solar panels and photovoltaic devices, and methods and systems for producing them
CN112095147A (zh) * 2019-06-02 2020-12-18 尹翠哲 一种生产铸造单晶时籽晶层的保护方法
US12062582B2 (en) * 2020-01-15 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices
CN114188435B (zh) * 2020-09-14 2024-01-12 一道新能源科技股份有限公司 一种太阳能电池制备方法及太阳能电池
CN113512742B (zh) * 2021-04-23 2023-07-07 南昌航空大学 一种高温合金表面的预处理方法和一种高温合金表面电沉积的方法
US11875996B2 (en) 2021-09-23 2024-01-16 Applied Materials, Inc. Methods for electrochemical deposition of isolated seed layer areas
CN114499277B (zh) * 2022-01-21 2024-07-16 西安交通大学 一种基于二维材料的高频电化学驱动器及其制备方法
CN114512555A (zh) * 2022-04-18 2022-05-17 浙江晶科能源有限公司 太阳能电池的制备方法
CN115458612B (zh) * 2022-10-27 2024-08-20 通威太阳能(眉山)有限公司 一种太阳电池及其制备方法
CN117976744B (zh) * 2024-03-21 2024-07-02 金阳(泉州)新能源科技有限公司 无单晶硅衬底的背接触电池及其制备方法和柔性电池组件
CN118507598B (zh) * 2024-07-17 2024-10-18 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件
CN119451281B (zh) * 2025-01-08 2025-03-21 金阳(泉州)新能源科技有限公司 一种背接触电池的后制绒制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
US20100229917A1 (en) * 2009-03-11 2010-09-16 Chulchae Choi Solar cell and solar cell module
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
JP4134503B2 (ja) * 2000-10-11 2008-08-20 松下電器産業株式会社 回路形成基板の製造方法
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
FR2877144B1 (fr) * 2004-10-22 2006-12-08 Solarforce Soc Par Actions Sim Structure multicouche monolithique pour la connexion de cellules a semi-conducteur
JP2008041679A (ja) * 2006-08-01 2008-02-21 Matsushita Electric Ind Co Ltd 回路形成基板の製造方法
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
CN101548392A (zh) * 2006-12-01 2009-09-30 夏普株式会社 太阳能电池及其制造方法
CN101889348B (zh) * 2007-11-19 2013-03-27 应用材料公司 使用图案化蚀刻剂物质以形成太阳能电池接点的工艺
KR101155343B1 (ko) * 2008-02-25 2012-06-11 엘지전자 주식회사 백 콘택 태양전지의 제조 방법
JP2011519182A (ja) * 2008-04-29 2011-06-30 アプライド マテリアルズ インコーポレイテッド モノリシックモジュール組立て技法を使用して製造した光起電モジュール
NL2001727C2 (nl) * 2008-06-26 2009-12-29 Eurotron B V Werkwijze voor het vervaardigen van een zonnepaneel, alsmede halffabrikaat daarvoor.
DE102008062286A1 (de) * 2008-12-03 2010-06-10 P-D Industriegesellschaft mbH Betriebsstätte: Werk Bitterfeld-Laminate Solarmodul
AU2010229103A1 (en) * 2009-03-26 2011-11-03 Bp Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
JP5625311B2 (ja) * 2009-10-20 2014-11-19 凸版印刷株式会社 太陽電池用裏面保護シート及び太陽電池モジュール
JP5459596B2 (ja) * 2009-10-28 2014-04-02 凸版印刷株式会社 太陽電池用裏面保護シート及び太陽電池モジュール
US8119901B2 (en) * 2009-11-03 2012-02-21 Lg Electronics Inc. Solar cell module having a conductive pattern part

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100015751A1 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
US20100229917A1 (en) * 2009-03-11 2010-09-16 Chulchae Choi Solar cell and solar cell module
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors

Also Published As

Publication number Publication date
AU2012294932A1 (en) 2014-03-27
EP2742536A2 (en) 2014-06-18
AU2012294932B2 (en) 2016-08-11
JP2014525671A (ja) 2014-09-29
EP2742536A4 (en) 2015-08-12
WO2013022479A2 (en) 2013-02-14
US20150020877A1 (en) 2015-01-22
JP2017195401A (ja) 2017-10-26
KR20140064854A (ko) 2014-05-28
CN103918088A (zh) 2014-07-09
US9842949B2 (en) 2017-12-12
MY173413A (en) 2020-01-23
WO2013022479A3 (en) 2013-05-16

Similar Documents

Publication Publication Date Title
CN103918088B (zh) 利用细晶半导体吸收体的高效太阳能光伏电池及模块
JP6250552B2 (ja) マルチレベルソーラーセルメタライゼーション
US20170278991A1 (en) Multi-level solar cell metallization
US20130213469A1 (en) High efficiency solar cell structures and manufacturing methods
US20150171230A1 (en) Fabrication methods for back contact solar cells
US20130228221A1 (en) Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
US20170236954A1 (en) High efficiency solar cell structures and manufacturing methods
US9379258B2 (en) Fabrication methods for monolithically isled back contact back junction solar cells
US9515217B2 (en) Monolithically isled back contact back junction solar cells
US9911875B2 (en) Solar cell metallization
KR20150119262A (ko) 벌크 웨이퍼를 사용한 모노리식 섬 후측 접촉 후측 접합 태양 전지
WO2013184244A1 (en) Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
JP2016500931A (ja) 一体アイル型太陽光発電セル及びモジュールのためのシステム及び方法
US9929288B2 (en) Trench isolation for monolithically isled solar photovoltaic cells and modules
AU2016200610B2 (en) Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells
WO2014011260A2 (en) High efficiency solar cell structures and manufacturing methods
KR20170003526A (ko) 배면 접촉 태양전지용의 자체 정렬된 접촉부
WO2015100392A2 (en) Self aligned contacts for monolithically isled back contact back junction solar cells
WO2016033614A1 (en) Laser doping for making back contact back junction solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170704

Termination date: 20180809

CF01 Termination of patent right due to non-payment of annual fee