JP2014525671A - 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール - Google Patents

薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール Download PDF

Info

Publication number
JP2014525671A
JP2014525671A JP2014525003A JP2014525003A JP2014525671A JP 2014525671 A JP2014525671 A JP 2014525671A JP 2014525003 A JP2014525003 A JP 2014525003A JP 2014525003 A JP2014525003 A JP 2014525003A JP 2014525671 A JP2014525671 A JP 2014525671A
Authority
JP
Japan
Prior art keywords
layer
solar cell
metal
contact
back contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014525003A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014525671A5 (enExample
Inventor
メールダッド エム モスレヒ
パワン カプール
ケイ−ジョセフ クレイマー
ヴィレンドラ ヴイ ラナ
ショーン セウター
アナンド デシュパンデ
アンソニー カルカテラ
ジェリー オルセン
カムラン マンテギ
トム スタルカップ
ジョージ ディー カミアン
デイヴィッド シュエン−チー ワン
イェン−シュヨン スゥ
マイケル ウィンガート
Original Assignee
ソレクセル、インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソレクセル、インコーポレイテッド filed Critical ソレクセル、インコーポレイテッド
Publication of JP2014525671A publication Critical patent/JP2014525671A/ja
Publication of JP2014525671A5 publication Critical patent/JP2014525671A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H10F77/1665—Amorphous semiconductors including only Group IV materials including Group IV-IV materials, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014525003A 2011-08-09 2012-08-09 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール Pending JP2014525671A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161521743P 2011-08-09 2011-08-09
US201161521754P 2011-08-09 2011-08-09
US61/521,743 2011-08-09
US61/521,754 2011-08-09
PCT/US2012/000348 WO2013022479A2 (en) 2011-08-09 2012-08-09 High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017120887A Division JP2017195401A (ja) 2011-08-09 2017-06-20 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール

Publications (2)

Publication Number Publication Date
JP2014525671A true JP2014525671A (ja) 2014-09-29
JP2014525671A5 JP2014525671A5 (enExample) 2015-10-01

Family

ID=47669135

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014525003A Pending JP2014525671A (ja) 2011-08-09 2012-08-09 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール
JP2017120887A Pending JP2017195401A (ja) 2011-08-09 2017-06-20 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017120887A Pending JP2017195401A (ja) 2011-08-09 2017-06-20 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール

Country Status (8)

Country Link
US (1) US9842949B2 (enExample)
EP (1) EP2742536A4 (enExample)
JP (2) JP2014525671A (enExample)
KR (1) KR20140064854A (enExample)
CN (1) CN103918088B (enExample)
AU (1) AU2012294932B2 (enExample)
MY (1) MY173413A (enExample)
WO (1) WO2013022479A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016184709A (ja) * 2015-03-27 2016-10-20 信越化学工業株式会社 太陽電池の製造方法
JP2016213476A (ja) * 2015-05-13 2016-12-15 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
WO2017068959A1 (ja) * 2015-10-21 2017-04-27 シャープ株式会社 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法
WO2019017281A1 (ja) * 2017-07-18 2019-01-24 シャープ株式会社 光電変換装置

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20130337601A1 (en) * 2012-02-29 2013-12-19 Solexel, Inc. Structures and methods for high efficiency compound semiconductor solar cells
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
US9853171B2 (en) * 2012-09-05 2017-12-26 Zinniatek Limited Photovoltaic devices with three dimensional surface features and methods of making the same
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9515217B2 (en) 2012-11-05 2016-12-06 Solexel, Inc. Monolithically isled back contact back junction solar cells
US9293624B2 (en) * 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
ES2705199T3 (es) * 2013-01-17 2019-03-22 Atotech Deutschland Gmbh Contactos eléctricos galvanizados para módulos solares
US20150236638A1 (en) * 2013-04-13 2015-08-20 Solexel, Inc. Solar photovoltaic module power control and status monitoring system utilizing laminateembedded remote access module switch
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9502596B2 (en) * 2013-06-28 2016-11-22 Sunpower Corporation Patterned thin foil
US10553738B2 (en) * 2013-08-21 2020-02-04 Sunpower Corporation Interconnection of solar cells in a solar cell module
CN105900248A (zh) * 2013-11-11 2016-08-24 索莱克赛尔公司 电介质钝化的金属绝缘体光伏太阳能电池
WO2015084824A1 (en) * 2013-12-02 2015-06-11 Applied Materials, Inc. Methods for substrate processing
JPWO2015145886A1 (ja) * 2014-03-25 2017-04-13 パナソニックＩｐマネジメント株式会社 電極パターンの形成方法及び太陽電池の製造方法
US10707364B2 (en) * 2014-05-30 2020-07-07 University Of Central Florida Research Foundation, Inc. Solar cell with absorber substrate bonded between substrates
US9825191B2 (en) * 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
CN105742403A (zh) * 2014-12-11 2016-07-06 上海晶玺电子科技有限公司 背接触电池和双面电池的金属化方法
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9859451B2 (en) 2015-06-26 2018-01-02 International Business Machines Corporation Thin film photovoltaic cell with back contacts
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9620466B1 (en) * 2015-11-30 2017-04-11 Infineon Technologies Ag Method of manufacturing an electronic device having a contact pad with partially sealed pores
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) * 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
DE102016107802A1 (de) * 2016-04-27 2017-11-02 Universität Stuttgart Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium
KR102257824B1 (ko) * 2016-12-05 2021-05-28 엘지전자 주식회사 태양 전지 제조 방법
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
KR102470791B1 (ko) * 2017-12-07 2022-11-28 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 패널
CN109979798B (zh) * 2017-12-27 2022-02-25 无锡华润微电子有限公司 碳化硅晶圆湿法腐蚀方法
US10593824B2 (en) * 2018-02-02 2020-03-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Ultra-thin flexible rear-contact Si solar cells and methods for manufacturing the same
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
DE102018214778A1 (de) * 2018-08-30 2020-03-05 Siemens Aktiengesellschaft Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul
CN109860312B (zh) * 2018-11-27 2021-10-22 北京捷宸阳光科技发展有限公司 用于p型晶体硅太阳能电池硼扩散背钝化工艺
CN112095147A (zh) * 2019-06-02 2020-12-18 尹翠哲 一种生产铸造单晶时籽晶层的保护方法
US12062582B2 (en) 2020-01-15 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices
CN114188435B (zh) * 2020-09-14 2024-01-12 一道新能源科技股份有限公司 一种太阳能电池制备方法及太阳能电池
CN113512742B (zh) * 2021-04-23 2023-07-07 南昌航空大学 一种高温合金表面的预处理方法和一种高温合金表面电沉积的方法
IL311088A (en) * 2021-08-31 2024-04-01 Solarpaint Ltd Improved flexible solar panels and photovoltaic devices, and methods and systems for their manufacture
US11875996B2 (en) 2021-09-23 2024-01-16 Applied Materials, Inc. Methods for electrochemical deposition of isolated seed layer areas
CN114499277B (zh) * 2022-01-21 2024-07-16 西安交通大学 一种基于二维材料的高频电化学驱动器及其制备方法
CN114512555A (zh) * 2022-04-18 2022-05-17 浙江晶科能源有限公司 太阳能电池的制备方法
CN115458612B (zh) * 2022-10-27 2024-08-20 通威太阳能(眉山)有限公司 一种太阳电池及其制备方法
CN117976744B (zh) * 2024-03-21 2024-07-02 金阳(泉州)新能源科技有限公司 无单晶硅衬底的背接触电池及其制备方法和柔性电池组件
CN118507598B (zh) * 2024-07-17 2024-10-18 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件
CN119451281B (zh) * 2025-01-08 2025-03-21 金阳(泉州)新能源科技有限公司 一种背接触电池的后制绒制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002120197A (ja) * 2000-10-11 2002-04-23 Matsushita Electric Ind Co Ltd 回路形成基板の製造方法および回路形成基板の製造用データ
JP2008041679A (ja) * 2006-08-01 2008-02-21 Matsushita Electric Ind Co Ltd 回路形成基板の製造方法
US20100229917A1 (en) * 2009-03-11 2010-09-16 Chulchae Choi Solar cell and solar cell module
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4329183B2 (ja) * 1999-10-14 2009-09-09 ソニー株式会社 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
FR2877144B1 (fr) * 2004-10-22 2006-12-08 Solarforce Soc Par Actions Sim Structure multicouche monolithique pour la connexion de cellules a semi-conducteur
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
WO2008065918A1 (fr) * 2006-12-01 2008-06-05 Sharp Kabushiki Kaisha Cellule solaire et son procédé de fabrication
TW200939510A (en) * 2007-11-19 2009-09-16 Applied Materials Inc Solar cell contact formation process using a patterned etchant material
KR101155343B1 (ko) * 2008-02-25 2012-06-11 엘지전자 주식회사 백 콘택 태양전지의 제조 방법
WO2009134939A2 (en) * 2008-04-29 2009-11-05 Advent Solar, Inc. Photovoltaic modules manufactured using monolithic module assembly techniques
NL2001727C2 (nl) * 2008-06-26 2009-12-29 Eurotron B V Werkwijze voor het vervaardigen van een zonnepaneel, alsmede halffabrikaat daarvoor.
US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
DE102008062286A1 (de) * 2008-12-03 2010-06-10 P-D Industriegesellschaft mbH Betriebsstätte: Werk Bitterfeld-Laminate Solarmodul
WO2010111107A2 (en) * 2009-03-26 2010-09-30 Bp Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
JP5625311B2 (ja) * 2009-10-20 2014-11-19 凸版印刷株式会社 太陽電池用裏面保護シート及び太陽電池モジュール
JP5459596B2 (ja) * 2009-10-28 2014-04-02 凸版印刷株式会社 太陽電池用裏面保護シート及び太陽電池モジュール
US8119901B2 (en) * 2009-11-03 2012-02-21 Lg Electronics Inc. Solar cell module having a conductive pattern part

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002120197A (ja) * 2000-10-11 2002-04-23 Matsushita Electric Ind Co Ltd 回路形成基板の製造方法および回路形成基板の製造用データ
JP2008041679A (ja) * 2006-08-01 2008-02-21 Matsushita Electric Ind Co Ltd 回路形成基板の製造方法
US20100229917A1 (en) * 2009-03-11 2010-09-16 Chulchae Choi Solar cell and solar cell module
WO2011072161A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016184709A (ja) * 2015-03-27 2016-10-20 信越化学工業株式会社 太陽電池の製造方法
JP2016213476A (ja) * 2015-05-13 2016-12-15 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
WO2017068959A1 (ja) * 2015-10-21 2017-04-27 シャープ株式会社 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法
WO2019017281A1 (ja) * 2017-07-18 2019-01-24 シャープ株式会社 光電変換装置
JPWO2019017281A1 (ja) * 2017-07-18 2020-06-25 シャープ株式会社 光電変換装置

Also Published As

Publication number Publication date
MY173413A (en) 2020-01-23
EP2742536A2 (en) 2014-06-18
US20150020877A1 (en) 2015-01-22
AU2012294932A1 (en) 2014-03-27
CN103918088B (zh) 2017-07-04
AU2012294932B2 (en) 2016-08-11
JP2017195401A (ja) 2017-10-26
KR20140064854A (ko) 2014-05-28
US9842949B2 (en) 2017-12-12
CN103918088A (zh) 2014-07-09
EP2742536A4 (en) 2015-08-12
WO2013022479A2 (en) 2013-02-14
WO2013022479A3 (en) 2013-05-16

Similar Documents

Publication Publication Date Title
JP6250552B2 (ja) マルチレベルソーラーセルメタライゼーション
JP2017195401A (ja) 薄い結晶半導体吸収体を使用する高効率ソーラー光発電セルおよびモジュール
US20170278991A1 (en) Multi-level solar cell metallization
US20130228221A1 (en) Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
US20130213469A1 (en) High efficiency solar cell structures and manufacturing methods
US20150171230A1 (en) Fabrication methods for back contact solar cells
US20170236954A1 (en) High efficiency solar cell structures and manufacturing methods
US9379258B2 (en) Fabrication methods for monolithically isled back contact back junction solar cells
US9515217B2 (en) Monolithically isled back contact back junction solar cells
US9911875B2 (en) Solar cell metallization
US9196759B2 (en) High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods
KR102015072B1 (ko) 웨이퍼 기초 솔라 패널의 제조 방법
KR102015591B1 (ko) 박형 실리콘 태양 전지용 활성 후면판
US20160013335A1 (en) Active backplane for thin silicon solar cells
WO2013184244A1 (en) Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
CN104272475A (zh) 背接触太阳能光伏模块用半导体晶片的电池和模块加工
WO2014127067A1 (en) Monolithically isled back contact back junction solar cells using bulk wafers
US20120298172A1 (en) Method for manufacturing photovoltaic modules comprising back-contact cells
WO2014011260A2 (en) High efficiency solar cell structures and manufacturing methods
WO2015100392A2 (en) Self aligned contacts for monolithically isled back contact back junction solar cells

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20140707

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20140710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150810

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150810

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160606

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160906

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170620

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170628

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20170818

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180925