MY157906A - Methods and apparatus for barrier interface preparation of copper interconnect - Google Patents

Methods and apparatus for barrier interface preparation of copper interconnect

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Publication number
MY157906A
MY157906A MYPI20090659A MYPI20090659A MY157906A MY 157906 A MY157906 A MY 157906A MY PI20090659 A MYPI20090659 A MY PI20090659A MY PI20090659 A MYPI20090659 A MY PI20090659A MY 157906 A MY157906 A MY 157906A
Authority
MY
Malaysia
Prior art keywords
methods
copper interconnect
barrier interface
interface preparation
preparation
Prior art date
Application number
MYPI20090659A
Other languages
English (en)
Inventor
Yoon Hyungsuk Alexander
John M Boyd
Dordi Yezdi
Fritz C Redeker
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of MY157906A publication Critical patent/MY157906A/en

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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C18/1601—Process or apparatus
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    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C18/31—Coating with metals
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures

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MYPI20090659A 2006-08-30 2007-08-17 Methods and apparatus for barrier interface preparation of copper interconnect MY157906A (en)

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US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/639,050 US8916232B2 (en) 2006-08-30 2006-12-13 Method for barrier interface preparation of copper interconnect

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090304914A1 (en) * 2006-08-30 2009-12-10 Lam Research Corporation Self assembled monolayer for improving adhesion between copper and barrier layer
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
US8679970B2 (en) * 2008-05-21 2014-03-25 International Business Machines Corporation Structure and process for conductive contact integration
JP2010040771A (ja) * 2008-08-05 2010-02-18 Rohm Co Ltd 半導体装置の製造方法
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
US9177917B2 (en) * 2010-08-20 2015-11-03 Micron Technology, Inc. Semiconductor constructions
JP5862353B2 (ja) * 2011-08-05 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US9312203B2 (en) * 2013-01-02 2016-04-12 Globalfoundries Inc. Dual damascene structure with liner
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
US8916469B2 (en) * 2013-03-12 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating copper damascene
CN110391177A (zh) * 2013-09-29 2019-10-29 格罗方德半导体公司 自组装单层原位气相沉积作为铜助粘剂及扩散阻障件的方法
US9269585B2 (en) * 2014-01-10 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for cleaning metal gate surface
US9490211B1 (en) * 2015-06-23 2016-11-08 Lam Research Corporation Copper interconnect
JP6470876B2 (ja) * 2016-05-16 2019-02-13 株式会社アルバック Ｃｕ膜の形成方法
US9768063B1 (en) 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US9875958B1 (en) 2016-11-09 2018-01-23 International Business Machines Corporation Trace/via hybrid structure and method of manufacture
US10731250B2 (en) * 2017-06-06 2020-08-04 Lam Research Corporation Depositing ruthenium layers in interconnect metallization
TWI810808B (zh) * 2017-12-22 2023-08-01 美商應用材料股份有限公司 在導電表面上沉積阻擋層的方法
US10801978B2 (en) * 2018-03-12 2020-10-13 Nova Measuring Instruments, Inc. XPS metrology for process control in selective deposition
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN109273402B (zh) * 2018-09-13 2020-08-25 德淮半导体有限公司 金属阻挡层的制作方法、金属互连结构及其制作方法
US20220344205A1 (en) * 2019-09-25 2022-10-27 Tokyo Electron Limited Substrate liquid processing method and substate liquid processing apparatus
US11410881B2 (en) 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride
US12148660B2 (en) * 2020-10-06 2024-11-19 Applied Materials, Inc. Low resistance and high reliability metallization module
US20250286002A1 (en) * 2024-03-08 2025-09-11 Applied Materials, Inc. Aluminum Oxide Crystallization Barrier for Hybrid Bonding

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017820A (en) * 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6362099B1 (en) 1999-03-09 2002-03-26 Applied Materials, Inc. Method for enhancing the adhesion of copper deposited by chemical vapor deposition
JP2001015517A (ja) 1999-07-02 2001-01-19 Ebara Corp 半導体装置及びその製造方法
US6413858B1 (en) * 1999-08-27 2002-07-02 Micron Technology, Inc. Barrier and electroplating seed layer
JP4537523B2 (ja) 2000-02-16 2010-09-01 富士通株式会社 Ｃｕ系埋込配線のパルスメッキ方法
US7135404B2 (en) * 2002-01-10 2006-11-14 Semitool, Inc. Method for applying metal features onto barrier layers using electrochemical deposition
WO2001088972A1 (en) * 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6777327B2 (en) * 2001-03-28 2004-08-17 Sharp Laboratories Of America, Inc. Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics
JP4169950B2 (ja) * 2001-05-18 2008-10-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6528884B1 (en) * 2001-06-01 2003-03-04 Advanced Micro Devices, Inc. Conformal atomic liner layer in an integrated circuit interconnect
US6686278B2 (en) * 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
JP2003059861A (ja) 2001-08-09 2003-02-28 Tokyo Electron Ltd 成膜方法および成膜装置
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
KR100805843B1 (ko) * 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
US20030143837A1 (en) * 2002-01-28 2003-07-31 Applied Materials, Inc. Method of depositing a catalytic layer
US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US8241701B2 (en) * 2005-08-31 2012-08-14 Lam Research Corporation Processes and systems for engineering a barrier surface for copper deposition
US6875693B1 (en) * 2003-03-26 2005-04-05 Lsi Logic Corporation Via and metal line interface capable of reducing the incidence of electro-migration induced voids
KR20060079144A (ko) * 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US20050079703A1 (en) * 2003-10-09 2005-04-14 Applied Materials, Inc. Method for planarizing an interconnect structure
KR20070001195A (ko) * 2004-04-14 2007-01-03 유니버시티 오브 매사추세츠 기판에의 금속층의 부착 및 관련 구조물
US7211509B1 (en) * 2004-06-14 2007-05-01 Novellus Systems, Inc, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
US20090304914A1 (en) * 2006-08-30 2009-12-10 Lam Research Corporation Self assembled monolayer for improving adhesion between copper and barrier layer
DE102004037089A1 (de) * 2004-07-30 2006-03-16 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht
US7476618B2 (en) * 2004-10-26 2009-01-13 Asm Japan K.K. Selective formation of metal layers in an integrated circuit
US7309658B2 (en) * 2004-11-22 2007-12-18 Intermolecular, Inc. Molecular self-assembly in substrate processing
US20060240187A1 (en) * 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
TW200707640A (en) * 2005-03-18 2007-02-16 Applied Materials Inc Contact metallization scheme using a barrier layer over a silicide layer
US7459392B2 (en) * 2005-03-31 2008-12-02 Intel Corporation Noble metal barrier and seed layer for semiconductors
US20070098902A1 (en) * 2005-06-17 2007-05-03 Cornell Research Foundation, Inc. Fabricating inorganic-on-organic interfaces for molecular electronics employing a titanium coordination complex and thiophene self-assembled monolayers
KR100657165B1 (ko) * 2005-08-12 2006-12-13 동부일렉트로닉스 주식회사 구리 배선의 형성 방법 및 그에 의해 형성된 구리 배선을포함하는 반도체 소자
US20070108063A1 (en) * 2005-09-28 2007-05-17 Ebara Corporation Layer forming method, layer forming apparatus, workpiece processing apparatus, interconnect forming method, and substrate interconnect structure
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
US7524765B2 (en) * 2005-11-02 2009-04-28 Intel Corporation Direct tailoring of the composition and density of ALD films
US20070281476A1 (en) * 2006-06-02 2007-12-06 Lavoie Adrien R Methods for forming thin copper films and structures formed thereby
US7902064B1 (en) * 2007-05-16 2011-03-08 Intermolecular, Inc. Method of forming a layer to enhance ALD nucleation on a substrate

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TWI378533B (en) 2012-12-01
JP5484053B2 (ja) 2014-05-07
CN101511494B (zh) 2013-01-30
US20150128861A1 (en) 2015-05-14
TW200832613A (en) 2008-08-01
US20080057198A1 (en) 2008-03-06
WO2008027214A2 (en) 2008-03-06
WO2008027214A3 (en) 2008-11-13
US8916232B2 (en) 2014-12-23
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CN101511494A (zh) 2009-08-19
JP2010503204A (ja) 2010-01-28

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