MY157126A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling

Info

Publication number
MY157126A
MY157126A MYPI2012000302A MYPI2012000302A MY157126A MY 157126 A MY157126 A MY 157126A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY 157126 A MY157126 A MY 157126A
Authority
MY
Malaysia
Prior art keywords
composition
metal plating
suppressing agent
void free
feature filling
Prior art date
Application number
MYPI2012000302A
Other languages
English (en)
Inventor
Röger Göpfert
Raether Roman Benedikt
Haag Alexandra
Mayer Dieter
Emnet Charlotte
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY157126A publication Critical patent/MY157126A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
MYPI2012000302A 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling MY157126A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
MY157126A true MY157126A (en) 2016-05-13

Family

ID=43425023

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012000302A MY157126A (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (1) US9869029B2 (cg-RX-API-DMAC7.html)
EP (1) EP2459778B1 (cg-RX-API-DMAC7.html)
JP (1) JP5714581B2 (cg-RX-API-DMAC7.html)
KR (1) KR101752018B1 (cg-RX-API-DMAC7.html)
CN (1) CN102597329B (cg-RX-API-DMAC7.html)
IL (1) IL217536A (cg-RX-API-DMAC7.html)
MY (1) MY157126A (cg-RX-API-DMAC7.html)
RU (1) RU2539897C2 (cg-RX-API-DMAC7.html)
SG (2) SG177685A1 (cg-RX-API-DMAC7.html)
TW (1) TWI487813B (cg-RX-API-DMAC7.html)
WO (1) WO2011012462A2 (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2539895C2 (ru) * 2009-07-30 2015-01-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
JP5981938B2 (ja) 2010-12-21 2016-08-31 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se レベリング剤を含有する金属電解めっき組成物
AU2012219869A1 (en) * 2011-02-22 2013-09-12 Basf Se Polymers on the basis of glycerin carbonate and an alcohol
EP2678375B1 (de) * 2011-02-22 2014-12-10 Basf Se Polymere basierend auf glycerincarbonat
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
KR101952568B1 (ko) 2011-06-01 2019-02-27 바스프 에스이 상호연결 피처 및 실리콘 관통 전극의 보텀-업 충전을 위한 첨가제를 포함하는 금속 전기도금 조성물
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
US9758885B2 (en) 2012-11-09 2017-09-12 Basf Se Composition for metal electroplating comprising leveling agent
JP6463330B2 (ja) * 2013-03-13 2019-01-30 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 土壌の保水性を有効に高める湿潤剤組成物およびその特定のための関連方法
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
KR102312018B1 (ko) * 2013-12-09 2021-10-13 아베니 전기화학적 불활성 양이온을 함유하는 구리 전착 배쓰
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
CN109477234B (zh) * 2016-07-18 2021-12-10 巴斯夫欧洲公司 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN111051576B (zh) 2017-09-04 2022-08-16 巴斯夫欧洲公司 用于金属电镀的包含流平剂的组合物
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se レベリング剤を含んだコバルト電気メッキ用組成物
CN111918985B (zh) * 2018-03-29 2024-02-02 巴斯夫欧洲公司 用于锡-银合金电镀的包含配位剂的组合物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN115335434A (zh) 2020-04-03 2022-11-11 巴斯夫欧洲公司 用于铜凸块电沉积的包含聚氨基酰胺型流平剂的组合物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
JP2024540824A (ja) 2021-10-01 2024-11-06 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅電着用組成物
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
EP4638837A1 (en) 2022-12-19 2025-10-29 Basf Se A composition for copper nanotwin electrodeposition

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2441555A (en) 1943-10-12 1948-05-18 Heyden Chemical Corp Mixed esters of polyhydric alcohols
GB602591A (en) * 1945-02-12 1948-05-31 Du Pont Improvements in or relating to the electro-deposition of metals
US3956079A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
SU1055781A1 (ru) * 1982-03-22 1983-11-23 Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности Водный электролит блест щего меднени
US4487853A (en) * 1983-12-27 1984-12-11 Basf Wyandotte Corporation Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon
JPS62182295A (ja) * 1985-08-07 1987-08-10 Daiwa Tokushu Kk 銅メツキ浴組成物
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
US5888373A (en) * 1997-06-23 1999-03-30 Industrial Technology Research Institute Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof
DE10033433A1 (de) * 2000-07-10 2002-01-24 Basf Ag Verfahren zur elektrolytischen Verzinkung aus alkansulfonsäurehaltigen Elektrolyten
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US20020074242A1 (en) * 2000-10-13 2002-06-20 Shipley Company, L.L.C. Seed layer recovery
MX230531B (es) * 2000-10-19 2005-09-12 Atotech Deutschland Gmbh Bano de cobre y metodo para depositar un revestimiento mate de cobre.
US6776893B1 (en) * 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
DE10107880B4 (de) 2001-02-20 2007-12-06 Clariant Produkte (Deutschland) Gmbh Alkoxylierte Polyglycerine und ihre Verwendung als Emulsionsspalter
EP1422320A1 (en) 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
DE10325198B4 (de) 2003-06-04 2007-10-25 Clariant Produkte (Deutschland) Gmbh Verwendung von alkoxylierten vernetzten Polyglycerinen als biologisch abbaubare Emulsionsspalter
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
EP1819848A1 (en) 2004-11-29 2007-08-22 Technic, Incorporated Near neutral ph tin electroplating solution
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2282682C1 (ru) * 2005-04-28 2006-08-27 Российский химико-технологический университет им. Д.И. Менделеева Электролит и способ меднения
MY142392A (en) 2005-10-26 2010-11-30 Malaysian Palm Oil Board A process for preparing polymers of polyhydric alcohols
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
RU2385366C1 (ru) * 2008-12-15 2010-03-27 Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта Электролит меднения стальных подложек
WO2010115756A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115717A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
JP5722872B2 (ja) 2009-04-07 2015-05-27 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Also Published As

Publication number Publication date
CN102597329A (zh) 2012-07-18
KR101752018B1 (ko) 2017-06-28
SG177685A1 (en) 2012-02-28
CN102597329B (zh) 2015-12-16
WO2011012462A3 (en) 2012-01-19
JP2013500394A (ja) 2013-01-07
IL217536A (en) 2016-05-31
KR20120051721A (ko) 2012-05-22
EP2459778B1 (en) 2015-01-14
WO2011012462A2 (en) 2011-02-03
RU2012107133A (ru) 2013-09-10
US9869029B2 (en) 2018-01-16
RU2539897C2 (ru) 2015-01-27
EP2459778A2 (en) 2012-06-06
SG10201404394QA (en) 2014-10-30
TWI487813B (zh) 2015-06-11
IL217536A0 (en) 2012-02-29
US20120128888A1 (en) 2012-05-24
TW201109477A (en) 2011-03-16
JP5714581B2 (ja) 2015-05-07

Similar Documents

Publication Publication Date Title
MY157126A (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
MY160150A (en) Composition for metal plating comprising suppressing agent for void free submicron feature filling
PH12015502789A1 (en) Solid cleaning agent composition
MY150023A (en) Surfactant composition
MY170653A (en) Composition for metal electroplating comprising leveling agent
EP2508518A4 (en) CYCLIC POLYPHENYLENE-ETHER-ETHER-KETONE COMPOSITION AND METHOD FOR PRODUCING THE SAME
MY155370A (en) Composition for metal electroplating comprising leveling agent
WO2010055160A3 (de) Saure wässrige thiodiglykolethoxlat zusammensetzung und ihre verwendung in einem beizverfahren von metallischen oberflächen
MX2011012366A (es) Mezclas fungicidas sinergeticas.
MX2015000571A (es) Uso de tensioactivos no ionicos alcoxilados como aditivo en composiciones de limpieza de membrana acuosas.
MX2011011024A (es) Mecanismo de traba montado a bloque de reaccion y diferencial teniendo tal un bloque de reaccion.
MY156831A (en) Cleansing composition
GB201114133D0 (en) Coelenterazine analogs and manufacturing method thereof
PH12015500965A1 (en) Detergent composition
MY155733A (en) Early strengthening agent for hydraulic composition
MX2016002600A (es) Eteraminas a base de glicerina alcoxilada o trimetilolpropano.
MY162166A (en) Alkaline detergent composition for use on hard surfaces
MX2013007460A (es) Formulaciones que contienen amina para flotacion de espuma inversade silicatos de mineral de hierro.
WO2011061452A3 (fr) Précurseurs biscarbonates, leur procédé de préparation et leurs utilisations
MX2008001512A (es) Composicion limpiadora y metodo de formar la misma.
ATE478919T1 (de) Stabilisierte wässrige polymerzusammensetzungen
WO2009109850A3 (en) N-substitutedbenzenepropanamide or benzenepropenamide derivatives for use in the treatment of pain and inflammation
WO2011015857A3 (en) Composition
WO2011015858A3 (en) Composition
WO2011052987A3 (ko) 식각액 조성물