MX9301773A - Separacion de contaminantes superficiales por irradiacion. - Google Patents
Separacion de contaminantes superficiales por irradiacion.Info
- Publication number
- MX9301773A MX9301773A MX9301773A MX9301773A MX9301773A MX 9301773 A MX9301773 A MX 9301773A MX 9301773 A MX9301773 A MX 9301773A MX 9301773 A MX9301773 A MX 9301773A MX 9301773 A MX9301773 A MX 9301773A
- Authority
- MX
- Mexico
- Prior art keywords
- irradiation
- separation
- substrate
- surface pollutants
- energy irradiation
- Prior art date
Links
- 239000003344 environmental pollutant Substances 0.000 title 1
- 238000000926 separation method Methods 0.000 title 1
- 239000000356 contaminant Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
- B23K26/1436—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for pressure control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
- B23K26/1437—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for flow rate control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- Electromagnetism (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Drying Of Semiconductors (AREA)
- Road Signs Or Road Markings (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
Se proporciona un aparato para preparar contaminantes superficiales de una superficie plano o irregularmente conformada de un substrato, mediante irradiación de alta energía. La invención permite la separación de contaminantes superficiales sin alterar la estructura cristalina molecular subyacente del substrato. La fuente de irradiación de alta energía incluye una lámpara de alta energía o un laser de onda continua o en impulsos.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86503992A | 1992-03-31 | 1992-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9301773A true MX9301773A (es) | 1994-02-28 |
Family
ID=25344584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9301773A MX9301773A (es) | 1992-03-31 | 1993-03-30 | Separacion de contaminantes superficiales por irradiacion. |
Country Status (17)
Country | Link |
---|---|
EP (1) | EP0633823B1 (es) |
JP (1) | JPH07505577A (es) |
KR (1) | KR100221421B1 (es) |
CN (1) | CN1078415A (es) |
AT (1) | ATE180703T1 (es) |
AU (1) | AU673519B2 (es) |
BR (1) | BR9306174A (es) |
CA (1) | CA2132332C (es) |
CZ (1) | CZ238294A3 (es) |
DE (1) | DE69325171D1 (es) |
FI (1) | FI944526A (es) |
MX (1) | MX9301773A (es) |
NO (1) | NO943626D0 (es) |
RU (1) | RU2114486C1 (es) |
SG (1) | SG42890A1 (es) |
TW (1) | TW367527B (es) |
WO (1) | WO1993019888A1 (es) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2714464B1 (fr) * | 1993-12-23 | 1996-02-09 | Cogema | Procédé de contrôle de la contamination surfacique d'un solide et dispositif de mise en Óoeuvre. |
IL115933A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Process and apparatus for oblique beam revolution for the effective laser stripping of sidewalls |
IL115934A0 (en) * | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser processing chamber with cassette cell |
IL115931A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser stripping improvement by modified gas composition |
NL1002598C2 (nl) * | 1996-03-13 | 1997-09-17 | Bootsman Holding Bv | Werkwijze en inrichting voor het bewerken van substraat. |
US5800625A (en) * | 1996-07-26 | 1998-09-01 | Cauldron Limited Partnership | Removal of material by radiation applied at an oblique angle |
AU6334098A (en) * | 1998-02-20 | 1999-09-06 | Goodyear Tire And Rubber Company, The | Robotic laser tire mold cleaning system and method of use |
US6369353B1 (en) | 1998-02-20 | 2002-04-09 | The Goodyear Tire & Rubber Company | Robotic laser tire mold cleaning system and method of use |
FR2777810B1 (fr) * | 1998-04-28 | 2000-05-19 | Air Liquide | Procede et dispositif de traitement de la surface interne d'une bouteille de gaz |
TWI426964B (zh) * | 2008-09-17 | 2014-02-21 | Hitachi High Tech Corp | Organic EL mask cleaning device, organic EL display manufacturing device, organic EL display and organic EL mask cleaning method |
KR101135499B1 (ko) | 2010-05-28 | 2012-04-13 | 삼성에스디아이 주식회사 | 전지용 전극 탭의 레이저 세정 장치 및 이를 이용한 레이저 세정 방법 |
RU2538161C2 (ru) * | 2012-12-28 | 2015-01-10 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" | Способ лазерной очистки поверхности |
JP6649387B2 (ja) * | 2014-12-30 | 2020-02-19 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 生物汚損防止システム |
JP6382901B2 (ja) | 2016-09-29 | 2018-08-29 | ファナック株式会社 | レーザー加工システム |
US10416575B2 (en) * | 2016-11-16 | 2019-09-17 | Suss Microtec Photomask Equipment Gmbh & Co. Kg | Apparatus and method for cleaning a partial area of a substrate |
RU2739195C1 (ru) * | 2020-04-07 | 2020-12-21 | Общество С Ограниченной Ответственностью "Нтц Тонкопленочных Технологий В Энергетике" | Вакуумная напылительная установка с системой лазерной очистки паллет (варианты) |
CN113020129A (zh) * | 2021-02-26 | 2021-06-25 | 苏州大学 | 一种复合激光清洗光头及复合式激光清洗方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
JPS57102229A (en) * | 1980-12-17 | 1982-06-25 | Matsushita Electric Ind Co Ltd | Substrate processing method |
US4568632A (en) * | 1982-10-07 | 1986-02-04 | International Business Machines Corporation | Patterning of polyimide films with far ultraviolet light |
JPS6037736A (ja) * | 1983-08-11 | 1985-02-27 | Toshiba Corp | 表面清浄方法 |
JPS60129136A (ja) * | 1983-12-15 | 1985-07-10 | Toshiba Corp | 紫外線照射装置 |
JPS61147988A (ja) * | 1984-12-19 | 1986-07-05 | Toshiba Corp | レ−ザ加工装置 |
US4668304A (en) * | 1985-04-10 | 1987-05-26 | Eaton Corporation | Dopant gettering semiconductor processing by excimer laser |
JPS6285433A (ja) * | 1985-10-09 | 1987-04-18 | Sumitomo Electric Ind Ltd | 研摩装置 |
ES2019931B3 (es) * | 1986-02-14 | 1991-07-16 | Amoco Corp | Tratamiento por laser ultravioleta de superficies moldeadas. |
EP0268301B1 (en) * | 1986-11-20 | 1993-09-15 | Nec Corporation | Method and apparatus for writing a line on a patterned substrate |
JPS63178845A (ja) * | 1987-01-20 | 1988-07-22 | Mitsubishi Heavy Ind Ltd | 付着物除去装置 |
DE3721940A1 (de) * | 1987-07-02 | 1989-01-12 | Ibm Deutschland | Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss |
DE3904969A1 (de) * | 1988-02-24 | 1989-09-21 | Schmidt Ott Andreas Dr | Verfahren zur beseitigung von staubpartikeln von oberflaechen in gasfoermiger umgebung |
US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5024968A (en) * | 1988-07-08 | 1991-06-18 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
FR2641718B1 (fr) * | 1989-01-17 | 1992-03-20 | Ardt | Procede de nettoyage de la surface de matieres solides et dispositif de mise en oeuvre de ce procede, utilisant un laser impulsionnel de puissance, a impulsions courtes, dont on focalise le faisceau sur la surface a nettoyer |
US4920994A (en) * | 1989-09-12 | 1990-05-01 | The United States Of America As Represented By The United States Department Of Energy | Laser removal of sludge from steam generators |
US5151135A (en) * | 1989-09-15 | 1992-09-29 | Amoco Corporation | Method for cleaning surfaces using UV lasers |
US4979180A (en) * | 1989-11-24 | 1990-12-18 | Muncheryan Arthur M | Modular interchangeable laser system |
JPH04157088A (ja) * | 1990-10-17 | 1992-05-29 | Fujitsu Ltd | レーザ加工装置 |
-
1993
- 1993-03-24 KR KR1019940703422A patent/KR100221421B1/ko not_active IP Right Cessation
- 1993-03-24 DE DE69325171T patent/DE69325171D1/de not_active Expired - Lifetime
- 1993-03-24 CZ CZ942382A patent/CZ238294A3/cs unknown
- 1993-03-24 BR BR9306174A patent/BR9306174A/pt unknown
- 1993-03-24 AT AT93908539T patent/ATE180703T1/de not_active IP Right Cessation
- 1993-03-24 AU AU39325/93A patent/AU673519B2/en not_active Ceased
- 1993-03-24 EP EP93908539A patent/EP0633823B1/en not_active Expired - Lifetime
- 1993-03-24 CA CA002132332A patent/CA2132332C/en not_active Expired - Fee Related
- 1993-03-24 SG SG1996000451A patent/SG42890A1/en unknown
- 1993-03-24 WO PCT/US1993/002734 patent/WO1993019888A1/en not_active Application Discontinuation
- 1993-03-24 JP JP5517537A patent/JPH07505577A/ja active Pending
- 1993-03-24 RU RU94042468A patent/RU2114486C1/ru active
- 1993-03-27 TW TW085105586A patent/TW367527B/zh active
- 1993-03-30 MX MX9301773A patent/MX9301773A/es unknown
- 1993-03-30 CN CN 93104564 patent/CN1078415A/zh active Pending
-
1994
- 1994-09-29 NO NO943626A patent/NO943626D0/no not_active Application Discontinuation
- 1994-09-29 FI FI944526A patent/FI944526A/fi unknown
Also Published As
Publication number | Publication date |
---|---|
WO1993019888A1 (en) | 1993-10-14 |
ATE180703T1 (de) | 1999-06-15 |
CN1078415A (zh) | 1993-11-17 |
DE69325171D1 (de) | 1999-07-08 |
KR100221421B1 (ko) | 1999-09-15 |
AU3932593A (en) | 1993-11-08 |
NO943626L (no) | 1994-09-29 |
EP0633823A4 (en) | 1995-02-15 |
CA2132332C (en) | 1999-03-30 |
EP0633823A1 (en) | 1995-01-18 |
EP0633823B1 (en) | 1999-06-02 |
RU94042468A (ru) | 1997-03-10 |
JPH07505577A (ja) | 1995-06-22 |
RU2114486C1 (ru) | 1998-06-27 |
TW367527B (en) | 1999-08-21 |
AU673519B2 (en) | 1996-11-14 |
CZ238294A3 (en) | 1996-02-14 |
FI944526A0 (fi) | 1994-09-29 |
BR9306174A (pt) | 1998-01-13 |
CA2132332A1 (en) | 1993-10-01 |
FI944526A (fi) | 1994-09-29 |
SG42890A1 (en) | 1997-10-17 |
NO943626D0 (no) | 1994-09-29 |
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