MX2016004234A - Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion. - Google Patents

Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion.

Info

Publication number
MX2016004234A
MX2016004234A MX2016004234A MX2016004234A MX2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A
Authority
MX
Mexico
Prior art keywords
measuring
mems
pressure
region
substrate
Prior art date
Application number
MX2016004234A
Other languages
English (en)
Other versions
MX360473B (es
Inventor
Cavalloni Claudio
Goehlich Andreas
Kühne Stéphane
Original Assignee
Kistler Holding Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kistler Holding Ag filed Critical Kistler Holding Ag
Publication of MX2016004234A publication Critical patent/MX2016004234A/es
Publication of MX360473B publication Critical patent/MX360473B/es

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0005—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using variations in capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/005—Non square semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

El chip de sistema micro-electromecánico (chip MEMS) para medir una presión en un espacio de presión (D), que comprende un sustrato MEMS (30) y un sustrato MEMS (30) y un sustrato de soporte (31) el cuál es unido a otro de una manera bidimensional, caracterizado porque el chip MEMS (3) es en la forma de una barra y tiene una zona de medición (4) con medios de medición electromecánicos, posteriormente una zona de buje (11), después una zona que hace contacto (6) la cuál se conecta a la zona de medición (4) por medio de líneas (8) y tiene contactos (16), y caracterizado porque el chip MEMS (3) en la zona de buje (11) es adecuado para la estructura a prueba de presión en un buje. De acuerdo a la invención, los medios de medición electromecánica se configuran de tal manera que el sustrato MEMS (30) tiene una cavidad (5) que forma un orificio ciego, el borde del cuál se forma una membrana (7) en el sustrato MEMS (30), y el puente de medición (19) comprende elementos piezorresistivos (2) en el lado de esta membrana (7) la cuál se enfrenta lejos de la cavidad (5). El sustrato MEMS (30) se une al sustrato de soporte (31), con el resultado de que el sustrato de soporte (31) forme una pared inferior (50) de la cavidad (5) formada debajo de la membrana (7).
MX2016004234A 2013-10-03 2014-10-02 Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion. MX360473B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH01699/13A CH708708A1 (de) 2013-10-03 2013-10-03 Messelement zum Messen eines Drucks und Druckmesssensor.
PCT/CH2014/000142 WO2015048916A1 (de) 2013-10-03 2014-10-02 Mems-chip, messelement und drucksensor zum messen eines drucks

Publications (2)

Publication Number Publication Date
MX2016004234A true MX2016004234A (es) 2016-10-07
MX360473B MX360473B (es) 2018-11-05

Family

ID=49322111

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016004234A MX360473B (es) 2013-10-03 2014-10-02 Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion.

Country Status (10)

Country Link
US (1) US9927316B2 (es)
EP (1) EP3052915A1 (es)
JP (2) JP2016540192A (es)
KR (1) KR20160065109A (es)
CN (1) CN105593657A (es)
BR (1) BR112016006523A2 (es)
CA (1) CA2924166A1 (es)
CH (1) CH708708A1 (es)
MX (1) MX360473B (es)
WO (1) WO2015048916A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3030738B1 (fr) * 2014-12-19 2020-03-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur de pression adapte aux mesures de pression en milieu agressif
IT201600083804A1 (it) 2016-08-09 2018-02-09 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore
CN109025971B (zh) * 2018-04-28 2022-02-01 中国石油天然气股份有限公司 钻井压力检测装置及其膜片受力机构
EP3654005B1 (en) * 2018-11-15 2022-05-11 TE Connectivity Solutions GmbH Differential pressure sensor device
WO2021089263A1 (en) * 2019-11-06 2021-05-14 Shl Medical Ag Spray nozzle chip
DE102019133325A1 (de) 2019-12-06 2021-06-10 Endress+Hauser SE+Co. KG Druckmessaufnehmer
DE102020206769B3 (de) * 2020-05-29 2021-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Mikroelektronische anordnung und verfahren zur herstellung derselben
CN112284608B (zh) * 2020-09-15 2022-08-02 南京高华科技股份有限公司 电容式微机械气压传感器及其制备方法
CN112254865A (zh) * 2020-09-15 2021-01-22 南京高华科技股份有限公司 电阻式微机械气压传感器及其制备方法
CN113155348B (zh) * 2021-02-26 2023-09-12 西安微电子技术研究所 一种压阻式压力传感器信号处理模块及其集成方法
CN114136528B (zh) * 2021-12-07 2024-03-01 华东光电集成器件研究所 一种soi压力敏感芯片

Family Cites Families (19)

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US4021766A (en) * 1975-07-28 1977-05-03 Aine Harry E Solid state pressure transducer of the leaf spring type and batch method of making same
US4901731A (en) 1988-04-27 1990-02-20 Millar Instruments, Inc. Single sensor pressure differential device
JPH05340828A (ja) * 1992-05-18 1993-12-24 Fujikura Ltd 半導体圧力センサ
JPH08247873A (ja) * 1995-03-13 1996-09-27 Tokai Rika Co Ltd 圧力センサ
JP2001324398A (ja) * 2000-03-07 2001-11-22 Anelva Corp 耐蝕型真空センサ
US6626044B1 (en) * 2000-10-03 2003-09-30 Honeywell International Inc. Freeze resistant sensor
US6505398B2 (en) * 2000-12-04 2003-01-14 Kavlico Corporation Very high pressure miniature sensing and mounting technique
JP4159895B2 (ja) * 2003-02-17 2008-10-01 キヤノンアネルバ株式会社 静電容量型圧力センサ及びその製造方法
US7246525B2 (en) * 2003-03-10 2007-07-24 Danfoss A/S Silicon pressure sensor with decreased pressure equalization between measured pressure and reference chamber
US7111518B1 (en) * 2003-09-19 2006-09-26 Silicon Microstructures, Inc. Extremely low cost pressure sensor realized using deep reactive ion etching
DE102004018408A1 (de) * 2004-04-16 2005-11-03 Robert Bosch Gmbh Kapazitiver Drucksensor und Verfahren zur Herstellung
JP4506478B2 (ja) * 2005-01-18 2010-07-21 株式会社デンソー 圧力センサ
JP4585426B2 (ja) * 2005-10-31 2010-11-24 アルプス電気株式会社 静電容量型圧力センサ
EP2166330A1 (en) * 2008-09-22 2010-03-24 GE Infrastructure Sensing, Inc. Miniature pressure transducer with elongate base wafer and operable at high temperatures
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Also Published As

Publication number Publication date
US9927316B2 (en) 2018-03-27
JP2016540192A (ja) 2016-12-22
JP6655211B2 (ja) 2020-02-26
CN105593657A (zh) 2016-05-18
BR112016006523A2 (pt) 2017-08-01
CH708708A1 (de) 2015-04-15
EP3052915A1 (de) 2016-08-10
JP2019174478A (ja) 2019-10-10
US20160231189A1 (en) 2016-08-11
MX360473B (es) 2018-11-05
CA2924166A1 (en) 2015-04-09
WO2015048916A1 (de) 2015-04-09
KR20160065109A (ko) 2016-06-08

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