MX2016004234A - Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion. - Google Patents
Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion.Info
- Publication number
- MX2016004234A MX2016004234A MX2016004234A MX2016004234A MX2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A MX 2016004234 A MX2016004234 A MX 2016004234A
- Authority
- MX
- Mexico
- Prior art keywords
- measuring
- mems
- pressure
- region
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0005—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using variations in capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/005—Non square semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
El chip de sistema micro-electromecánico (chip MEMS) para medir una presión en un espacio de presión (D), que comprende un sustrato MEMS (30) y un sustrato MEMS (30) y un sustrato de soporte (31) el cuál es unido a otro de una manera bidimensional, caracterizado porque el chip MEMS (3) es en la forma de una barra y tiene una zona de medición (4) con medios de medición electromecánicos, posteriormente una zona de buje (11), después una zona que hace contacto (6) la cuál se conecta a la zona de medición (4) por medio de líneas (8) y tiene contactos (16), y caracterizado porque el chip MEMS (3) en la zona de buje (11) es adecuado para la estructura a prueba de presión en un buje. De acuerdo a la invención, los medios de medición electromecánica se configuran de tal manera que el sustrato MEMS (30) tiene una cavidad (5) que forma un orificio ciego, el borde del cuál se forma una membrana (7) en el sustrato MEMS (30), y el puente de medición (19) comprende elementos piezorresistivos (2) en el lado de esta membrana (7) la cuál se enfrenta lejos de la cavidad (5). El sustrato MEMS (30) se une al sustrato de soporte (31), con el resultado de que el sustrato de soporte (31) forme una pared inferior (50) de la cavidad (5) formada debajo de la membrana (7).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01699/13A CH708708A1 (de) | 2013-10-03 | 2013-10-03 | Messelement zum Messen eines Drucks und Druckmesssensor. |
PCT/CH2014/000142 WO2015048916A1 (de) | 2013-10-03 | 2014-10-02 | Mems-chip, messelement und drucksensor zum messen eines drucks |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2016004234A true MX2016004234A (es) | 2016-10-07 |
MX360473B MX360473B (es) | 2018-11-05 |
Family
ID=49322111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2016004234A MX360473B (es) | 2013-10-03 | 2014-10-02 | Chip microelectromecanico, elemento de medicion y sensor de presion para medir una presion. |
Country Status (10)
Country | Link |
---|---|
US (1) | US9927316B2 (es) |
EP (1) | EP3052915A1 (es) |
JP (2) | JP2016540192A (es) |
KR (1) | KR20160065109A (es) |
CN (1) | CN105593657A (es) |
BR (1) | BR112016006523A2 (es) |
CA (1) | CA2924166A1 (es) |
CH (1) | CH708708A1 (es) |
MX (1) | MX360473B (es) |
WO (1) | WO2015048916A1 (es) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3030738B1 (fr) * | 2014-12-19 | 2020-03-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur de pression adapte aux mesures de pression en milieu agressif |
IT201600083804A1 (it) | 2016-08-09 | 2018-02-09 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore |
CN109025971B (zh) * | 2018-04-28 | 2022-02-01 | 中国石油天然气股份有限公司 | 钻井压力检测装置及其膜片受力机构 |
EP3654005B1 (en) * | 2018-11-15 | 2022-05-11 | TE Connectivity Solutions GmbH | Differential pressure sensor device |
WO2021089263A1 (en) * | 2019-11-06 | 2021-05-14 | Shl Medical Ag | Spray nozzle chip |
DE102019133325A1 (de) | 2019-12-06 | 2021-06-10 | Endress+Hauser SE+Co. KG | Druckmessaufnehmer |
DE102020206769B3 (de) * | 2020-05-29 | 2021-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Mikroelektronische anordnung und verfahren zur herstellung derselben |
CN112284608B (zh) * | 2020-09-15 | 2022-08-02 | 南京高华科技股份有限公司 | 电容式微机械气压传感器及其制备方法 |
CN112254865A (zh) * | 2020-09-15 | 2021-01-22 | 南京高华科技股份有限公司 | 电阻式微机械气压传感器及其制备方法 |
CN113155348B (zh) * | 2021-02-26 | 2023-09-12 | 西安微电子技术研究所 | 一种压阻式压力传感器信号处理模块及其集成方法 |
CN114136528B (zh) * | 2021-12-07 | 2024-03-01 | 华东光电集成器件研究所 | 一种soi压力敏感芯片 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021766A (en) * | 1975-07-28 | 1977-05-03 | Aine Harry E | Solid state pressure transducer of the leaf spring type and batch method of making same |
US4901731A (en) | 1988-04-27 | 1990-02-20 | Millar Instruments, Inc. | Single sensor pressure differential device |
JPH05340828A (ja) * | 1992-05-18 | 1993-12-24 | Fujikura Ltd | 半導体圧力センサ |
JPH08247873A (ja) * | 1995-03-13 | 1996-09-27 | Tokai Rika Co Ltd | 圧力センサ |
JP2001324398A (ja) * | 2000-03-07 | 2001-11-22 | Anelva Corp | 耐蝕型真空センサ |
US6626044B1 (en) * | 2000-10-03 | 2003-09-30 | Honeywell International Inc. | Freeze resistant sensor |
US6505398B2 (en) * | 2000-12-04 | 2003-01-14 | Kavlico Corporation | Very high pressure miniature sensing and mounting technique |
JP4159895B2 (ja) * | 2003-02-17 | 2008-10-01 | キヤノンアネルバ株式会社 | 静電容量型圧力センサ及びその製造方法 |
US7246525B2 (en) * | 2003-03-10 | 2007-07-24 | Danfoss A/S | Silicon pressure sensor with decreased pressure equalization between measured pressure and reference chamber |
US7111518B1 (en) * | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
DE102004018408A1 (de) * | 2004-04-16 | 2005-11-03 | Robert Bosch Gmbh | Kapazitiver Drucksensor und Verfahren zur Herstellung |
JP4506478B2 (ja) * | 2005-01-18 | 2010-07-21 | 株式会社デンソー | 圧力センサ |
JP4585426B2 (ja) * | 2005-10-31 | 2010-11-24 | アルプス電気株式会社 | 静電容量型圧力センサ |
EP2166330A1 (en) * | 2008-09-22 | 2010-03-24 | GE Infrastructure Sensing, Inc. | Miniature pressure transducer with elongate base wafer and operable at high temperatures |
US9340414B2 (en) * | 2009-07-07 | 2016-05-17 | MCube Inc. | Method and structure of monolithically integrated absolute pressure sensor |
US8569851B2 (en) * | 2010-06-18 | 2013-10-29 | General Electric Company | Sensor and method for fabricating the same |
US8141429B2 (en) * | 2010-07-30 | 2012-03-27 | Rosemount Aerospace Inc. | High temperature capacitive static/dynamic pressure sensors and methods of making the same |
US8656784B2 (en) * | 2011-08-19 | 2014-02-25 | Kulite Semiconductor Products, Inc. | Flat covered leadless pressure sensor assemblies suitable for operation in extreme environments |
US8714021B2 (en) * | 2012-02-27 | 2014-05-06 | Amphenol Thermometrics, Inc. | Catheter die and method of fabricating the same |
-
2013
- 2013-10-03 CH CH01699/13A patent/CH708708A1/de not_active Application Discontinuation
-
2014
- 2014-10-02 CN CN201480054869.2A patent/CN105593657A/zh active Pending
- 2014-10-02 BR BR112016006523A patent/BR112016006523A2/pt not_active Application Discontinuation
- 2014-10-02 KR KR1020167008702A patent/KR20160065109A/ko not_active Application Discontinuation
- 2014-10-02 EP EP14789767.2A patent/EP3052915A1/de not_active Withdrawn
- 2014-10-02 CA CA2924166A patent/CA2924166A1/en not_active Abandoned
- 2014-10-02 WO PCT/CH2014/000142 patent/WO2015048916A1/de active Application Filing
- 2014-10-02 JP JP2016519887A patent/JP2016540192A/ja active Pending
- 2014-10-02 MX MX2016004234A patent/MX360473B/es active IP Right Grant
- 2014-10-02 US US15/024,482 patent/US9927316B2/en not_active Expired - Fee Related
-
2019
- 2019-05-24 JP JP2019097258A patent/JP6655211B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9927316B2 (en) | 2018-03-27 |
JP2016540192A (ja) | 2016-12-22 |
JP6655211B2 (ja) | 2020-02-26 |
CN105593657A (zh) | 2016-05-18 |
BR112016006523A2 (pt) | 2017-08-01 |
CH708708A1 (de) | 2015-04-15 |
EP3052915A1 (de) | 2016-08-10 |
JP2019174478A (ja) | 2019-10-10 |
US20160231189A1 (en) | 2016-08-11 |
MX360473B (es) | 2018-11-05 |
CA2924166A1 (en) | 2015-04-09 |
WO2015048916A1 (de) | 2015-04-09 |
KR20160065109A (ko) | 2016-06-08 |
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Legal Events
Date | Code | Title | Description |
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FG | Grant or registration |