MX2016000056A - Anticatodo para el deposito por chisporroteo reactivo de capas electricamente aislantes. - Google Patents

Anticatodo para el deposito por chisporroteo reactivo de capas electricamente aislantes.

Info

Publication number
MX2016000056A
MX2016000056A MX2016000056A MX2016000056A MX2016000056A MX 2016000056 A MX2016000056 A MX 2016000056A MX 2016000056 A MX2016000056 A MX 2016000056A MX 2016000056 A MX2016000056 A MX 2016000056A MX 2016000056 A MX2016000056 A MX 2016000056A
Authority
MX
Mexico
Prior art keywords
target
electrically insulating
insulating layers
reactive sputter
sputter deposition
Prior art date
Application number
MX2016000056A
Other languages
English (en)
Inventor
Krassnitzer Siegfried
Hagmann Juerg
Original Assignee
Oerlikon Surface Solutions Ag Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfäffikon filed Critical Oerlikon Surface Solutions Ag Pfäffikon
Publication of MX2016000056A publication Critical patent/MX2016000056A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

La presente invención se refiere a un anticátodo cuya superficie de anticátodo se incorpora de modo que el uso del anticátodo para el depósito por chisporroteo reactivo de capas eléctricamente aislantes en una cámara de revestimiento impide la producción de una descarga de chispas de la superficie de anticátodo a un ánodo que está situado en la cámara de revestimiento.
MX2016000056A 2013-07-09 2014-07-09 Anticatodo para el deposito por chisporroteo reactivo de capas electricamente aislantes. MX2016000056A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361843998P 2013-07-09 2013-07-09
PCT/EP2014/001884 WO2015003806A1 (de) 2013-07-09 2014-07-09 Target zur reaktiven sputter-abscheidung elektrisch-isolierender schichten

Publications (1)

Publication Number Publication Date
MX2016000056A true MX2016000056A (es) 2016-08-17

Family

ID=51210406

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2016000056A MX2016000056A (es) 2013-07-09 2014-07-09 Anticatodo para el deposito por chisporroteo reactivo de capas electricamente aislantes.
MX2021002242A MX2021002242A (es) 2013-07-09 2016-01-07 Objetivo para el deposito por pulverizacion catodica reactiva de capas electricamente aislantes.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2021002242A MX2021002242A (es) 2013-07-09 2016-01-07 Objetivo para el deposito por pulverizacion catodica reactiva de capas electricamente aislantes.

Country Status (15)

Country Link
US (1) US20160141157A1 (es)
EP (1) EP3019640B1 (es)
JP (1) JP6539649B2 (es)
KR (1) KR102234456B1 (es)
CN (1) CN105378138B (es)
BR (1) BR112016000035B1 (es)
CA (1) CA2932841C (es)
HK (1) HK1217976A1 (es)
IL (1) IL243464B (es)
MX (2) MX2016000056A (es)
MY (1) MY185599A (es)
PH (1) PH12015502842A1 (es)
RU (1) RU2016103909A (es)
SG (1) SG11201510706UA (es)
WO (1) WO2015003806A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754542B (zh) * 2016-07-11 2022-02-01 日商半導體能源研究所股份有限公司 濺射靶材及金屬氧化物
KR102626873B1 (ko) * 2021-11-17 2024-01-17 이계영 HiPIMS를 이용한 전극 증착 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4448659A (en) * 1983-09-12 1984-05-15 Vac-Tec Systems, Inc. Method and apparatus for evaporation arc stabilization including initial target cleaning
JPS60131965A (ja) * 1983-12-19 1985-07-13 Matsushita Electric Ind Co Ltd スパツタ用タ−ゲツト装置
US5126318A (en) * 1991-03-13 1992-06-30 Westinghouse Electric Corp. Sputtering method for forming superconductive films using water vapor addition
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
JPH09143706A (ja) * 1995-11-14 1997-06-03 Mitsubishi Chem Corp スパッタリングターゲット
US5674367A (en) * 1995-12-22 1997-10-07 Sony Corporation Sputtering target having a shrink fit mounting ring
US5738770A (en) * 1996-06-21 1998-04-14 Sony Corporation Mechanically joined sputtering target and adapter therefor
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6716321B2 (en) * 2001-10-04 2004-04-06 Northrop Grumman Corporation Modified electrical properties of sputtered thermal coatings
JP2004269939A (ja) * 2003-03-06 2004-09-30 Seiko Epson Corp スパッタ装置及びスパッタリング方法及び半導体装置
WO2005019493A2 (en) * 2003-08-11 2005-03-03 Honeywell International Inc. Target/backing plate constructions, and methods of forming them
US20060137969A1 (en) * 2004-12-29 2006-06-29 Feldewerth Gerald B Method of manufacturing alloy sputtering targets
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US8043488B2 (en) * 2006-06-02 2011-10-25 Bekaert Advanced Coatings Rotatable sputter target
EP2166128B1 (de) * 2008-09-19 2011-11-09 Oerlikon Trading AG, Trübbach Verfahren zum Herstellen von Metalloxidschichten durch Funkenverdampfung
US20100025229A1 (en) * 2008-07-30 2010-02-04 Guardian Industries Corp. Apparatus and method for sputtering target debris reduction
KR20150092375A (ko) * 2010-06-17 2015-08-12 울박, 인크 스퍼터 성막 장치 및 방착부재
JP5968740B2 (ja) * 2012-09-20 2016-08-10 株式会社アルバック ターゲット装置、スパッタ装置、及び、ターゲット装置の製造方法

Also Published As

Publication number Publication date
HK1217976A1 (zh) 2017-01-27
CA2932841C (en) 2021-11-23
EP3019640B1 (de) 2020-01-08
BR112016000035B1 (pt) 2022-01-25
US20160141157A1 (en) 2016-05-19
IL243464A0 (en) 2016-02-29
CN105378138B (zh) 2017-11-17
JP6539649B2 (ja) 2019-07-03
KR20160029113A (ko) 2016-03-14
BR112016000035A8 (pt) 2018-01-02
CN105378138A (zh) 2016-03-02
PH12015502842A1 (en) 2016-03-21
WO2015003806A1 (de) 2015-01-15
RU2016103909A (ru) 2017-08-14
KR102234456B1 (ko) 2021-04-01
SG11201510706UA (en) 2016-01-28
EP3019640A1 (de) 2016-05-18
JP2016524049A (ja) 2016-08-12
BR112016000035A2 (es) 2017-07-25
MX2021002242A (es) 2021-05-27
CA2932841A1 (en) 2015-01-15
IL243464B (en) 2019-11-28
MY185599A (en) 2021-05-24

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