SG11201510706UA - Target for the reactive sputter deposition of electrically insulating layers - Google Patents

Target for the reactive sputter deposition of electrically insulating layers

Info

Publication number
SG11201510706UA
SG11201510706UA SG11201510706UA SG11201510706UA SG11201510706UA SG 11201510706U A SG11201510706U A SG 11201510706UA SG 11201510706U A SG11201510706U A SG 11201510706UA SG 11201510706U A SG11201510706U A SG 11201510706UA SG 11201510706U A SG11201510706U A SG 11201510706UA
Authority
SG
Singapore
Prior art keywords
target
electrically insulating
insulating layers
sputter deposition
reactive sputter
Prior art date
Application number
SG11201510706UA
Inventor
Juerg Hagmann
Siegfried Krassnitzer
Original Assignee
Oerlikon Surface Solutions Ag Trübbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Trübbach filed Critical Oerlikon Surface Solutions Ag Trübbach
Publication of SG11201510706UA publication Critical patent/SG11201510706UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/081Oxides of aluminium, magnesium or beryllium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3485Sputtering using pulsed power to the target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3423Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/3467Pulsed operation, e.g. HIPIMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3322Problems associated with coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
SG11201510706UA 2013-07-09 2014-07-09 Target for the reactive sputter deposition of electrically insulating layers SG11201510706UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361843998P 2013-07-09 2013-07-09
PCT/EP2014/001884 WO2015003806A1 (en) 2013-07-09 2014-07-09 Target for the reactive sputter deposition of electrically insulating layers

Publications (1)

Publication Number Publication Date
SG11201510706UA true SG11201510706UA (en) 2016-01-28

Family

ID=51210406

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201510706UA SG11201510706UA (en) 2013-07-09 2014-07-09 Target for the reactive sputter deposition of electrically insulating layers

Country Status (15)

Country Link
US (1) US20160141157A1 (en)
EP (1) EP3019640B1 (en)
JP (1) JP6539649B2 (en)
KR (1) KR102234456B1 (en)
CN (1) CN105378138B (en)
BR (1) BR112016000035B1 (en)
CA (1) CA2932841C (en)
HK (1) HK1217976A1 (en)
IL (1) IL243464B (en)
MX (2) MX2016000056A (en)
MY (1) MY185599A (en)
PH (1) PH12015502842A1 (en)
RU (1) RU2016103909A (en)
SG (1) SG11201510706UA (en)
WO (1) WO2015003806A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI754542B (en) 2016-07-11 2022-02-01 日商半導體能源研究所股份有限公司 Sputtering target and metal oxide
KR102626873B1 (en) * 2021-11-17 2024-01-17 이계영 Electrode deposition method using HiPIMS

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4448659A (en) * 1983-09-12 1984-05-15 Vac-Tec Systems, Inc. Method and apparatus for evaporation arc stabilization including initial target cleaning
JPS60131965A (en) * 1983-12-19 1985-07-13 Matsushita Electric Ind Co Ltd Target device for sputtering
US5126318A (en) * 1991-03-13 1992-06-30 Westinghouse Electric Corp. Sputtering method for forming superconductive films using water vapor addition
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
JPH09143706A (en) * 1995-11-14 1997-06-03 Mitsubishi Chem Corp Sputtering target
US5674367A (en) * 1995-12-22 1997-10-07 Sony Corporation Sputtering target having a shrink fit mounting ring
US5738770A (en) * 1996-06-21 1998-04-14 Sony Corporation Mechanically joined sputtering target and adapter therefor
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6716321B2 (en) * 2001-10-04 2004-04-06 Northrop Grumman Corporation Modified electrical properties of sputtered thermal coatings
JP2004269939A (en) * 2003-03-06 2004-09-30 Seiko Epson Corp Apparatus and method for sputtering, and semiconductor device
ATE474071T1 (en) * 2003-08-11 2010-07-15 Honeywell Int Inc TARGET/SUPPORT PLATE CONSTRUCTIONS AND MANUFACTURING METHODS THEREOF
US20060137969A1 (en) * 2004-12-29 2006-06-29 Feldewerth Gerald B Method of manufacturing alloy sputtering targets
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
CN101484605A (en) * 2006-06-02 2009-07-15 贝卡尔特先进涂层公司 Rotatable sputter target
EP2166128B1 (en) * 2008-09-19 2011-11-09 Oerlikon Trading AG, Trübbach Method for producing metal oxide coatings by means of spark nebulisation
US20100025229A1 (en) * 2008-07-30 2010-02-04 Guardian Industries Corp. Apparatus and method for sputtering target debris reduction
WO2011158828A1 (en) * 2010-06-17 2011-12-22 株式会社アルバック Sputtering film forming device, and adhesion preventing member
JP5968740B2 (en) * 2012-09-20 2016-08-10 株式会社アルバック Target device, sputtering device, and method of manufacturing target device

Also Published As

Publication number Publication date
BR112016000035B1 (en) 2022-01-25
CA2932841C (en) 2021-11-23
BR112016000035A2 (en) 2017-07-25
KR102234456B1 (en) 2021-04-01
BR112016000035A8 (en) 2018-01-02
CA2932841A1 (en) 2015-01-15
EP3019640A1 (en) 2016-05-18
US20160141157A1 (en) 2016-05-19
CN105378138A (en) 2016-03-02
CN105378138B (en) 2017-11-17
IL243464A0 (en) 2016-02-29
MX2016000056A (en) 2016-08-17
MX2021002242A (en) 2021-05-27
RU2016103909A (en) 2017-08-14
JP2016524049A (en) 2016-08-12
PH12015502842A1 (en) 2016-03-21
MY185599A (en) 2021-05-24
WO2015003806A1 (en) 2015-01-15
HK1217976A1 (en) 2017-01-27
EP3019640B1 (en) 2020-01-08
IL243464B (en) 2019-11-28
JP6539649B2 (en) 2019-07-03
KR20160029113A (en) 2016-03-14

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