MX2015006833A - Elemento semiconductor de nitruro y metodo para la fabricacion del mismo. - Google Patents

Elemento semiconductor de nitruro y metodo para la fabricacion del mismo.

Info

Publication number
MX2015006833A
MX2015006833A MX2015006833A MX2015006833A MX2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A
Authority
MX
Mexico
Prior art keywords
nitride semiconductor
sapphire substrate
semiconductor element
main surface
manufacturing
Prior art date
Application number
MX2015006833A
Other languages
English (en)
Other versions
MX364561B (es
Inventor
Tomohiro Shimooka
Masahiko Sano
Naoki Azuma
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of MX2015006833A publication Critical patent/MX2015006833A/es
Publication of MX364561B publication Critical patent/MX364561B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Un elemento semiconductor de nitruro incluye un substrato de zafiro que incluye: una superficie principal que se extiende en un plano-c del substrato de zafiro, y una pluralidad de salientes colocadas en la superficie principal, la pluralidad de salientes que incluyen al menos una saliente que tiene una forma alargada en una vista en planta; y una capa de semiconductor de nitruro colocada en la superficie principal del substrato de zafiro. La por lo menos una saliente tiene un borde exterior que se extiende en una dirección longitudinal de la forma alargada, el borde exterior que se extiende en una dirección orientada a un ángulo en un intervalo de -10° a + 10° con respecto a un plano-a del substrato de zafiro en la vista en planta.
MX2015006833A 2014-05-30 2015-05-29 Elemento semiconductor de nitruro y metodo para la fabricacion del mismo. MX364561B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014111966 2014-05-30

Publications (2)

Publication Number Publication Date
MX2015006833A true MX2015006833A (es) 2016-01-12
MX364561B MX364561B (es) 2019-04-30

Family

ID=53274434

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015006833A MX364561B (es) 2014-05-30 2015-05-29 Elemento semiconductor de nitruro y metodo para la fabricacion del mismo.

Country Status (7)

Country Link
EP (1) EP2950356B1 (es)
KR (1) KR102334161B1 (es)
CN (1) CN105280776B (es)
BR (1) BR102015012604B1 (es)
MX (1) MX364561B (es)
RU (1) RU2663684C2 (es)
TW (1) TWI640104B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6135751B2 (ja) * 2015-02-18 2017-05-31 日亜化学工業株式会社 発光素子
US9773946B2 (en) * 2015-02-18 2017-09-26 Nichia Corporation Light-emitting element comprising a partitioned sapphire substrate
JP7305428B2 (ja) * 2018-06-05 2023-07-10 株式会社小糸製作所 半導体成長用基板、半導体素子、半導体発光素子および半導体素子製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
JP4201079B2 (ja) * 2002-12-20 2008-12-24 昭和電工株式会社 発光素子、その製造方法およびｌｅｄランプ
DE102004002132A1 (de) * 2004-01-15 2005-08-11 Man Roland Druckmaschinen Ag Einrichtung zur Erzeugung einer Beschichtung von Druckprodukten einer Druckmaschine
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
CN101232067B (zh) * 2005-05-16 2013-05-15 索尼株式会社 发光二极管及其制造方法、集成发光二极管、以及显示器
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2008053385A (ja) 2006-08-23 2008-03-06 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
CN101330002A (zh) * 2007-06-20 2008-12-24 中国科学院半导体研究所 用于氮化物外延生长的图形蓝宝石衬底的制作方法
JP2008091942A (ja) 2007-11-22 2008-04-17 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
JP5556657B2 (ja) * 2008-05-14 2014-07-23 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
KR101533296B1 (ko) * 2008-07-08 2015-07-02 삼성전자주식회사 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법
RU2402837C1 (ru) * 2009-10-21 2010-10-27 Закрытое акционерное общество "ЭПИ-ЦЕНТР" Полупроводниковый светоизлучающий прибор с пористым буферным слоем
US8476658B2 (en) * 2009-11-25 2013-07-02 Jing Jie Dai Semiconductor light-emitting devices
JP5273081B2 (ja) * 2010-03-30 2013-08-28 豊田合成株式会社 半導体発光素子
US8765509B2 (en) * 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
JP2012114204A (ja) * 2010-11-24 2012-06-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5811009B2 (ja) * 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
RU134362U1 (ru) * 2012-06-26 2013-11-10 Закрытое акционерное общество "Светлана-Оптоэлектроника" Гетероструктура на профилированной подложке

Also Published As

Publication number Publication date
TW201607075A (zh) 2016-02-16
KR102334161B1 (ko) 2021-12-02
RU2015120619A3 (es) 2018-07-05
RU2663684C2 (ru) 2018-08-08
KR20150138092A (ko) 2015-12-09
BR102015012604A2 (pt) 2015-12-01
CN105280776B (zh) 2019-01-01
RU2015120619A (ru) 2016-12-20
EP2950356A1 (en) 2015-12-02
MX364561B (es) 2019-04-30
EP2950356B1 (en) 2017-04-05
TWI640104B (zh) 2018-11-01
BR102015012604B1 (pt) 2022-04-05
CN105280776A (zh) 2016-01-27

Similar Documents

Publication Publication Date Title
EP3331035A4 (en) Group iii nitride semiconductor light-emitting element and manufacturing method therefor
EP3314657A4 (en) TRANSISTOR STRUCTURES OF GALLIUM NITRIDE (GAN) ON A SUBSTRATE
TW201614834A (en) Semiconductor structures with coplanar recessed gate layers and fabrication methods
KR101882055B1 (ko) 소스/드레인 구조체 위에 콘택을 구비한 반도체 구조체 및 이의 형성 방법
EP3352200A4 (en) SiC EPITAXIAL WAFER, SiC EPITAXIAL WAFER PRODUCTION DEVICE, SiC EPITAXIAL WATER PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE
EP2922096A3 (en) Semiconductor device and manufacturing method for the same
EP3195364A4 (en) Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon cmos-compatible semiconductor devices
MX2018007661A (es) Sujetador de superficie moldeado, metodo de fabricacion de sujetador de superficie moldeado y aparato de moldeo.
EP3701560A4 (en) WAFER WITH III-NITRIDE AND DIAMOND LAYERS
EP3376525A4 (en) METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
EP3605585A4 (en) PROCESS FOR MANUFACTURING REFORMED SIC WAFER, SIC WAFER ATTACHED TO EPITAXIAL LAYER, MANUFACTURING PROCESS FOR THEREOF, AND SURFACE TREATMENT PROCESS
USD769228S1 (en) Antenna
EP3522239A4 (en) LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR ELEMENT
EP3366817A4 (en) BASE SUBSTRATE, METHOD FOR MANUFACTURING BASE SUBSTRATE, AND PROCESS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL
EP3514265A4 (en) GROUP III NITRIDE LAMINATE AND SEMICONDUCTOR DEVICE INCLUDING THE LAMINATE
EP3514266A4 (en) GROUP III-V COMPOSITE SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOSITE SEMICONDUCTOR SUBSTRATE WITH EPITAXIAL LAYER
DK3449511T3 (da) Selvlysende solkoncentrator med stor flade baseret på halvledernanokrystaller med indirekte båndgab
EP3879010A4 (en) SIC SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCTION THEREOF AND DEVICE FOR PRODUCTION THEREOF
EP3879583A4 (en) GROUP III NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT AND METHOD FOR MAKING IT
EP3546622A4 (en) NITRIDE SEMICONDUCTOR SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE
EP3721479A4 (en) PHOTOVOLTAIC DEVICES AND SEMICONDUCTIVE LAYERS WITH GROUP V DOCUMENTS AND METHODS FOR THEIR PRODUCTION
EP3141635A4 (en) Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
EP2821532A4 (en) PROCESS FOR TREATING GROUP III NITRIDE SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
MX364561B (es) Elemento semiconductor de nitruro y metodo para la fabricacion del mismo.
EP3007215A4 (en) Group 13 nitride composite substrate, semiconductor element, and production method for group 13 nitride composite substrate

Legal Events

Date Code Title Description
FG Grant or registration