MX2007015879A - Metodo y sistema para calibrar un detector con base en un sistema micro-electromecanico (mems) con el uso de deteccion de corriente de tunelizacion. - Google Patents

Metodo y sistema para calibrar un detector con base en un sistema micro-electromecanico (mems) con el uso de deteccion de corriente de tunelizacion.

Info

Publication number
MX2007015879A
MX2007015879A MX2007015879A MX2007015879A MX2007015879A MX 2007015879 A MX2007015879 A MX 2007015879A MX 2007015879 A MX2007015879 A MX 2007015879A MX 2007015879 A MX2007015879 A MX 2007015879A MX 2007015879 A MX2007015879 A MX 2007015879A
Authority
MX
Mexico
Prior art keywords
tunneling current
elements
mems
micro
calibrating
Prior art date
Application number
MX2007015879A
Other languages
English (en)
Inventor
Emad Andarawis Andarawis
Ertugrul Berkcan
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX2007015879A publication Critical patent/MX2007015879A/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G01R33/0283—Electrodynamic magnetometers in which a current or voltage is generated due to relative movement of conductor and magnetic field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/028—Electrodynamic magnetometers
    • G01R33/0286—Electrodynamic magnetometers comprising microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

Un sistema (90) y método para controlar una corriente (42) de tunelización entre un primer elemento (40a) y un segundo elemento (40b) de un detector con sistema micro-electromecánico (MEMS). El sistema incluye una fuente (50) de excitación de corriente de tunelización para proporcionar una corriente de tunelización entre los elementos y un monitor (52) de corriente de tunelización para monitorear un cambio en la corriente de tunelización en respuesta al movimiento de por lo menos un elemento. El sistema también incluye un posicionador (86) para colocar por lo menos uno de los elementos y un controlador (88) en comunicación con el monitor de corriente de tunelización para controlar el posicionador para que coloque por lo menos uno de los elementos en un primer espaciado entre los elementos para configurar el sistema en un modo de referencia; y para colocar los elementos en un segundo espaciado para configurar el sistema en un modo de detección, con lo que el sistema se calibra con respecto al modo de referencia.
MX2007015879A 2007-01-03 2007-12-13 Metodo y sistema para calibrar un detector con base en un sistema micro-electromecanico (mems) con el uso de deteccion de corriente de tunelizacion. MX2007015879A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/619,227 US7378837B2 (en) 2004-06-07 2007-01-03 Method and system for calibrating a micro-electromechanical system (MEMS) based sensor using tunneling current sensing

Publications (1)

Publication Number Publication Date
MX2007015879A true MX2007015879A (es) 2009-02-23

Family

ID=39167525

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2007015879A MX2007015879A (es) 2007-01-03 2007-12-13 Metodo y sistema para calibrar un detector con base en un sistema micro-electromecanico (mems) con el uso de deteccion de corriente de tunelizacion.

Country Status (6)

Country Link
US (1) US7378837B2 (es)
EP (1) EP1942348B1 (es)
JP (1) JP5503106B2 (es)
KR (1) KR101442248B1 (es)
CN (1) CN101216539B (es)
MX (1) MX2007015879A (es)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9354257B2 (en) 2011-11-04 2016-05-31 General Electric Company Systems and methods for use in measuring current through a conductor

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SG117406A1 (en) 2001-03-19 2005-12-29 Miconductor Energy Lab Co Ltd Method of manufacturing a semiconductor device
US6850080B2 (en) * 2001-03-19 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Inspection method and inspection apparatus
JP2002340989A (ja) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd 測定方法、検査方法及び検査装置
US7741832B2 (en) * 2004-06-07 2010-06-22 General Electric Company Micro-electromechanical system (MEMS) based current and magnetic field sensor using tunneling current sensing
US8418556B2 (en) * 2010-02-10 2013-04-16 Robert Bosch Gmbh Micro electrical mechanical magnetic field sensor utilizing modified inertial elements
US8604772B2 (en) 2010-03-31 2013-12-10 General Electric Company MEMS-based resonant tunneling devices and arrays of such devices for electric field sensing
US8368380B2 (en) 2010-03-31 2013-02-05 General Electric Company Devices and methods for electric field sensing
CN102062826A (zh) * 2010-11-24 2011-05-18 中国科学院半导体研究所 基于差分方法的mems器件信号检测电路
CN103048013B (zh) * 2012-12-25 2015-05-06 中北大学 可变环境下微纳传感器的自动加载平台
KR102052967B1 (ko) * 2013-09-12 2019-12-09 엘지이노텍 주식회사 멤스 전류 센서
WO2015149331A1 (zh) 2014-04-03 2015-10-08 台湾超微光学股份有限公司 光谱仪、光谱仪的波导片的制造方法及其结构
CN106595897B (zh) * 2016-11-15 2018-11-16 湖南理工学院 隧道效应超灵敏度电磁控制恒温系统
US10566971B2 (en) * 2017-08-23 2020-02-18 Honeywell International Inc. Adaptive proximity sensor
US12000739B2 (en) 2021-04-22 2024-06-04 Analog Devices, Inc. Lever based differential capacitive strain gauge with acceleration rejection

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US5293781A (en) * 1987-11-09 1994-03-15 California Institute Of Technology Tunnel effect measuring systems and particle detectors
US5103174A (en) * 1990-02-26 1992-04-07 The United States Of America As Represented By The Secretary Of The Navy Magnetic field sensor and device for determining the magnetostriction of a material based on a tunneling tip detector and methods of using same
US6110751A (en) * 1997-01-10 2000-08-29 Fujitsu Limited Tunnel junction structure and its manufacture and magnetic sensor
US6008489A (en) * 1997-12-03 1999-12-28 Digital Instruments Method for improving the operation of oscillating mode atomic force microscopes
DE19827056A1 (de) * 1998-06-18 1999-12-23 Bosch Gmbh Robert Mikromechanischer Magnetfeldsensor
JP2000338143A (ja) * 1999-05-31 2000-12-08 Murata Mfg Co Ltd 電流量センサ
US6348788B1 (en) 1999-09-28 2002-02-19 Rockwell Automation Technologies, Inc. High resolution current sensing apparatus
US6664786B2 (en) 2001-07-30 2003-12-16 Rockwell Automation Technologies, Inc. Magnetic field sensor using microelectromechanical system
US6734660B1 (en) 2002-02-07 2004-05-11 Lockheed Martin Corporation Current sensor arrangement with test current generator
KR100444235B1 (ko) * 2002-12-10 2004-08-16 삼성전기주식회사 자기 및 가속도 동시 검출 방법 및 장치
US7221144B2 (en) 2004-06-07 2007-05-22 General Electric Company Micro-electromechanical system (MEMS) based current and magnetic field sensor having improved sensitivities
US7112951B2 (en) 2004-06-07 2006-09-26 General Electric Company MEMS based current sensor using magnetic-to-mechanical conversion and reference components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9354257B2 (en) 2011-11-04 2016-05-31 General Electric Company Systems and methods for use in measuring current through a conductor

Also Published As

Publication number Publication date
CN101216539A (zh) 2008-07-09
CN101216539B (zh) 2013-09-18
JP5503106B2 (ja) 2014-05-28
JP2008164611A (ja) 2008-07-17
KR20080064084A (ko) 2008-07-08
US20070120553A1 (en) 2007-05-31
KR101442248B1 (ko) 2014-09-23
EP1942348A1 (en) 2008-07-09
EP1942348B1 (en) 2011-10-12
US7378837B2 (en) 2008-05-27

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