JP5503106B2 - トンネル電流検知を使用する微小電気機械システム(mems)をベースにしたセンサを較正するための方法およびシステム - Google Patents
トンネル電流検知を使用する微小電気機械システム(mems)をベースにしたセンサを較正するための方法およびシステム Download PDFInfo
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- 230000005641 tunneling Effects 0.000 title claims description 44
- 238000000034 method Methods 0.000 title description 31
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
- G01R33/0283—Electrodynamic magnetometers in which a current or voltage is generated due to relative movement of conductor and magnetic field
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
- G01R33/0286—Electrodynamic magnetometers comprising microelectromechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Description
11 点
12 点
13 トンネル電流段階
15 点
17 曲線
19 例示的なグラフ
20 磁界
25 MEMSベースの磁界検知構成部品
28 空洞を有する基板
30 トンネル電流ベースの磁気MEMS構成部品
35 磁気機械変換器
40 構造用構成部品
40a 第1の構造用要素
40b 第2の構造用要素
41a 第1のトンネル電流回路要素
41b 第2のトンネル電流回路要素
42 トンネル電流
43 位置決め要素
45 機械的検知構成部品
46a 自由端
46b 支持端
50 トンネル電流励起源
52 トンネル電流モニタ
54 ドライバ回路
55 補償装置
56 比較器
58 位置決め信号
60 励起源
65 制御装置
70 出力構成部品
75 機械電気変換器
76 トンネル電流回路
80 出力段
82 トンネル電流構成部品
84 トンネルチップ
86 位置決め装置
88 トンネル電流制御装置
90 トンネル電流制御システム
92 第1の制御回路
94 分圧器回路網
96 第2の制御回路
98 分圧器回路網
100 電流センサ
102 流れ図
104 電位を変化させることにより、オーム性伝導状態を決定する
106 1つまたは両方の要素を移動させるステップ
108 抵抗特性を決定するステップ
110 非線形関係
112 オーム性伝導状態を識別するステップ
114 各要素を互いから離して移動させるステップ
116 抵抗を変化させる
118 電流伝導点を識別する
120 1つまたは両方の要素の相対位置を調整するステップ
122 各要素間の電流を調整するステップ
124 検知
126 流れ図
132 電流が一定になるときを決定するステップ
134 オーム伝導の状況が識別される
136 1つまたは両方の要素を互いから離すステップ
138 電流が変化する
140 定電流から可変電流まで移動するステップ
142 1つまたは両方の要素の相対位置を調整するステップ
144 各要素間の電流を所定の量だけ調整するステップ
146 刺激の検知
Claims (10)
- トンネル電流検知を用いた電流又は磁界センサであって、当該センサが、
微小電気機械システム(MEMS)センサの第1の要素(40a)と第2の要素(40b)の間のトンネル電流(42)を制御するシステム(90)あって、前記第1の要素と前記第2の要素とが互いに離間していて、少なくとも前記第1の要素(40a)は、少なくとも前記第1の要素(40a)に作用する刺激に応答して、前記第2の要素(40b)に対して移動可能であるシステム(90)を備えており、前記システム(90)が、
MEMSセンサ(100)の第1の要素(40a)と第2の要素(40b)の間にトンネル電流(42)を供給するトンネル電流励起源(50)と、
前記第2の要素(40b)に対して少なくとも前記第1の要素(40a)が移動することに応答した前記トンネル電流(42)の変化を監視するトンネル電流モニタ(52)と、
前記第1の要素(40a)と前記第2の要素(40b)の相対位置を調整するためこれらの少なくとも一方を位置決めする位置決め装置(86)と、
前記トンネル電流モニタ(52)と接続された制御装置(88)であって、前記第1の要素(40a)と前記第2の要素(40b)との間の間隔について、前記システム(90)を較正するための参照モードとして前記システム(90)を構成するための第1の間隔で前記第1の要素(40a)及び前記第2の要素(40b)の少なくとも一方を配置するとともに、前記システムを検知モードとして構成するための第2の間隔で前記第1の要素(40a)及び前記第2の要素(40b)の少なくとも一方を配置するように、前記位置決め装置(86)を制御するための制御装置(88)と
を備えている、センサ。 - 前記参照モードで基準電流値が用いられる、請求項1記載のセンサ。
- 前記参照モードでオーム伝導電流状態が用いられる、請求項1記載のセンサ。
- 前記参照モードで基準抵抗状態が用いられる、請求項1記載のセンサ。
- 前記基準抵抗状態が線形抵抗特性を含む、請求項4記載のセンサ。
- 前記線形抵抗特性が不変抵抗を含む、請求項5記載のセンサ。
- 前記位置決め装置(86)が、静電素子、磁気素子、熱素子及び圧電素子の少なくとも1つを備える、請求項1記載のセンサ。
- 前記トンネル電流励起源(50)が、
前記第1の要素(40a)及び前記第2の要素(40b)の一方に配置されたトンネル電極(41b)と、
第1の要素(40a)及び前記第2の要素(40b)の他方に配置され、前記トンネル電極(41b)に近接したトンネル電流集束要素(41a)と
を備える、請求項1記載のセンサ。 - 前記トンネル電流集束要素(41a)がトンネルチップを備える、請求項8記載のセンサ。
- 前記制御装置(88)が、前記位置決め装置(86)を励振して、前記システムを前記参照モードとして構成するための十分な間隔まで、前記第1の要素(40a)と前記第2の要素(40b)を近づけるための第1の制御回路(92)を備える、請求項8記載のセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/619,227 US7378837B2 (en) | 2004-06-07 | 2007-01-03 | Method and system for calibrating a micro-electromechanical system (MEMS) based sensor using tunneling current sensing |
US11/619,227 | 2007-01-03 |
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JP2008164611A JP2008164611A (ja) | 2008-07-17 |
JP5503106B2 true JP5503106B2 (ja) | 2014-05-28 |
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JP2007338447A Active JP5503106B2 (ja) | 2007-01-03 | 2007-12-28 | トンネル電流検知を使用する微小電気機械システム(mems)をベースにしたセンサを較正するための方法およびシステム |
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US (1) | US7378837B2 (ja) |
EP (1) | EP1942348B1 (ja) |
JP (1) | JP5503106B2 (ja) |
KR (1) | KR101442248B1 (ja) |
CN (1) | CN101216539B (ja) |
MX (1) | MX2007015879A (ja) |
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SG117406A1 (en) * | 2001-03-19 | 2005-12-29 | Miconductor Energy Lab Co Ltd | Method of manufacturing a semiconductor device |
US6850080B2 (en) * | 2001-03-19 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Inspection method and inspection apparatus |
JP2002340989A (ja) * | 2001-05-15 | 2002-11-27 | Semiconductor Energy Lab Co Ltd | 測定方法、検査方法及び検査装置 |
US7741832B2 (en) * | 2004-06-07 | 2010-06-22 | General Electric Company | Micro-electromechanical system (MEMS) based current and magnetic field sensor using tunneling current sensing |
US8418556B2 (en) * | 2010-02-10 | 2013-04-16 | Robert Bosch Gmbh | Micro electrical mechanical magnetic field sensor utilizing modified inertial elements |
US8604772B2 (en) | 2010-03-31 | 2013-12-10 | General Electric Company | MEMS-based resonant tunneling devices and arrays of such devices for electric field sensing |
US8368380B2 (en) | 2010-03-31 | 2013-02-05 | General Electric Company | Devices and methods for electric field sensing |
CN102062826A (zh) * | 2010-11-24 | 2011-05-18 | 中国科学院半导体研究所 | 基于差分方法的mems器件信号检测电路 |
US9354257B2 (en) | 2011-11-04 | 2016-05-31 | General Electric Company | Systems and methods for use in measuring current through a conductor |
CN103048013B (zh) * | 2012-12-25 | 2015-05-06 | 中北大学 | 可变环境下微纳传感器的自动加载平台 |
KR102052967B1 (ko) * | 2013-09-12 | 2019-12-09 | 엘지이노텍 주식회사 | 멤스 전류 센서 |
US10145739B2 (en) | 2014-04-03 | 2018-12-04 | Oto Photonics Inc. | Waveguide sheet, fabrication method thereof and spectrometer using the same |
CN106595897B (zh) * | 2016-11-15 | 2018-11-16 | 湖南理工学院 | 隧道效应超灵敏度电磁控制恒温系统 |
US10566971B2 (en) * | 2017-08-23 | 2020-02-18 | Honeywell International Inc. | Adaptive proximity sensor |
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US20070120553A1 (en) | 2007-05-31 |
MX2007015879A (es) | 2009-02-23 |
EP1942348A1 (en) | 2008-07-09 |
US7378837B2 (en) | 2008-05-27 |
KR101442248B1 (ko) | 2014-09-23 |
CN101216539A (zh) | 2008-07-09 |
CN101216539B (zh) | 2013-09-18 |
JP2008164611A (ja) | 2008-07-17 |
KR20080064084A (ko) | 2008-07-08 |
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