MX161722A - Mejoras en un aparato para depositar revestimientos de varias capas sobre un substrato - Google Patents

Mejoras en un aparato para depositar revestimientos de varias capas sobre un substrato

Info

Publication number
MX161722A
MX161722A MX203596A MX20359684A MX161722A MX 161722 A MX161722 A MX 161722A MX 203596 A MX203596 A MX 203596A MX 20359684 A MX20359684 A MX 20359684A MX 161722 A MX161722 A MX 161722A
Authority
MX
Mexico
Prior art keywords
substrate
multiple layers
deposit multiple
layers coatings
coatings
Prior art date
Application number
MX203596A
Other languages
English (en)
Inventor
Jose Manuel Gallego
Original Assignee
Pilkington Brothers Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pilkington Brothers Plc filed Critical Pilkington Brothers Plc
Publication of MX161722A publication Critical patent/MX161722A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
MX203596A 1983-12-05 1984-12-05 Mejoras en un aparato para depositar revestimientos de varias capas sobre un substrato MX161722A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838332394A GB8332394D0 (en) 1983-12-05 1983-12-05 Coating apparatus

Publications (1)

Publication Number Publication Date
MX161722A true MX161722A (es) 1990-12-19

Family

ID=10552832

Family Applications (1)

Application Number Title Priority Date Filing Date
MX203596A MX161722A (es) 1983-12-05 1984-12-05 Mejoras en un aparato para depositar revestimientos de varias capas sobre un substrato

Country Status (9)

Country Link
US (1) US4592306A (es)
EP (1) EP0144229A3 (es)
JP (1) JPS60167420A (es)
AU (1) AU575095B2 (es)
ES (1) ES8606816A1 (es)
GB (2) GB8332394D0 (es)
IN (1) IN163503B (es)
MX (1) MX161722A (es)
ZA (1) ZA849316B (es)

Families Citing this family (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
KR900001666B1 (ko) * 1985-07-19 1990-03-17 후지쓰가부시끼가이샤 화합물 반도체의 에피택셜층 성장용의 화학적 유기 금속 기상 성장장치
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
EP0228910B1 (en) * 1985-12-28 1991-07-31 Canon Kabushiki Kaisha Apparatus for forming deposited film
FR2594102B1 (fr) * 1986-02-12 1991-04-19 Stein Heurtey Installation flexible automatisee de traitement thermochimique rapide
US5102495A (en) * 1986-04-18 1992-04-07 General Signal Corporation Method providing multiple-processing of substrates
US4715921A (en) * 1986-10-24 1987-12-29 General Signal Corporation Quad processor
EP0246453A3 (en) * 1986-04-18 1989-09-06 General Signal Corporation Novel multiple-processing and contamination-free plasma etching system
US5013385A (en) * 1986-04-18 1991-05-07 General Signal Corporation Quad processor
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US6214119B1 (en) 1986-04-18 2001-04-10 Applied Materials, Inc. Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber
DE3783440T2 (de) * 1986-04-28 1993-08-12 Varian Associates Modulare foerder- und beabeitungsanlage fuer halbleiterwafer.
US4917556A (en) * 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4724874A (en) * 1986-05-01 1988-02-16 Asyst Technologies Sealable transportable container having a particle filtering system
US4722298A (en) * 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4852516A (en) * 1986-05-19 1989-08-01 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US5327624A (en) * 1986-07-16 1994-07-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin film on a semiconductor device using an apparatus having a load lock
US4676884A (en) * 1986-07-23 1987-06-30 The Boc Group, Inc. Wafer processing machine with evacuated wafer transporting and storage system
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
ATE102397T1 (de) * 1986-12-19 1994-03-15 Applied Materials Inc Integriertes bearbeitungssystem mit vielfachkammer.
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4763602A (en) * 1987-02-25 1988-08-16 Glasstech Solar, Inc. Thin film deposition apparatus including a vacuum transport mechanism
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
US5435682A (en) * 1987-10-15 1995-07-25 Advanced Semiconductor Materials America, Inc. Chemical vapor desposition system
US5020475A (en) * 1987-10-15 1991-06-04 Epsilon Technology, Inc. Substrate handling and transporting apparatus
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
KR970003907B1 (ko) * 1988-02-12 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 기판처리 장치 및 기판처리 방법
GB8806800D0 (en) * 1988-03-22 1988-04-20 British Telecomm Etching methods
US5016562A (en) * 1988-04-27 1991-05-21 Glasstech Solar, Inc. Modular continuous vapor deposition system
EP0343530B1 (de) * 1988-05-24 2001-11-14 Unaxis Balzers Aktiengesellschaft Vakuumanlage
US4988642A (en) * 1988-05-25 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
US6406544B1 (en) * 1988-06-23 2002-06-18 Jeffrey Stewart Parylene deposition chamber and method of use
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
IT1231664B (it) * 1989-07-26 1991-12-18 Consorzio Ce Te V Impianto da vuoto a doppia camera per processi di deposizione di strati sottili
US5240505A (en) * 1989-08-03 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method of an apparatus for forming thin film for semiconductor device
US5254170A (en) * 1989-08-07 1993-10-19 Asm Vt, Inc. Enhanced vertical thermal reactor system
US4981408A (en) * 1989-12-18 1991-01-01 Varian Associates, Inc. Dual track handling and processing system
US5310410A (en) * 1990-04-06 1994-05-10 Sputtered Films, Inc. Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus
US5186594A (en) * 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
FR2678775B1 (fr) * 1991-07-05 1997-02-28 Thomson Csf Procede de realisation d'un dispositif optoelectronique
JP3238432B2 (ja) * 1991-08-27 2001-12-17 東芝機械株式会社 マルチチャンバ型枚葉処理装置
US5766344A (en) 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP3221025B2 (ja) * 1991-12-19 2001-10-22 ソニー株式会社 プラズマプロセス装置
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer
US5264039A (en) * 1992-02-24 1993-11-23 Union Carbide Chemicals & Plastics Technology Corporation Vapor deposition apparatus
US5766360A (en) * 1992-03-27 1998-06-16 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
EP1179611B1 (de) * 1992-10-06 2004-09-15 Unaxis Balzers Aktiengesellschaft Kammer für den Transport von Werkstücken
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
ES2090893T3 (es) * 1993-01-28 1996-10-16 Applied Materials Inc Aparato de tratamiento en vacio que tiene una capacidad de produccion mejorada.
KR0171441B1 (ko) * 1993-02-05 1999-02-18 사또우 후미오 진공성막방법 및 그 장치
TW276353B (es) * 1993-07-15 1996-05-21 Hitachi Seisakusyo Kk
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
US5312489A (en) * 1993-09-30 1994-05-17 Union Carbide Chemicals & Plastics Technology Corporation Rotary fixture for vapor deposition coating apparatus
JP2627861B2 (ja) * 1993-10-22 1997-07-09 アネルバ株式会社 Ｔｉ−ＴｉＮ積層膜の成膜方法および装置
KR100291971B1 (ko) * 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US5488833A (en) * 1994-09-26 1996-02-06 Stewart; Jeffrey Tangential flow cold trap
JP3165348B2 (ja) * 1995-05-18 2001-05-14 ワイエイシイ株式会社 プラズマ処理装置およびその運転方法
US5705044A (en) 1995-08-07 1998-01-06 Akashic Memories Corporation Modular sputtering machine having batch processing and serial thin film sputtering
US5773088A (en) * 1995-12-05 1998-06-30 Materials Research Group, Inc. Treatment system including vacuum isolated sources and method
US5795356A (en) * 1996-05-31 1998-08-18 Slsp Partners, Inc. Microelectronic component fabrication facility, and process for making and using the facility
KR0183912B1 (ko) * 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US6152070A (en) * 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
JP3215643B2 (ja) * 1997-01-31 2001-10-09 ワイエイシイ株式会社 プラズマ処理装置
KR100353774B1 (ko) * 1997-05-08 2002-09-27 마츠시타 덴끼 산교 가부시키가이샤 광기록매체의 제조장치 및 제조방법
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
BE1011252A3 (nl) * 1997-07-04 1999-06-01 Burcht Tandtech Lab Bvba Werkwijze en inrichting voor het aanbrengen van een bekleding op voorwerpen.
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
JPH11121754A (ja) * 1997-10-14 1999-04-30 Sanyo Electric Co Ltd 薄膜トランジスタの製造装置及び製造方法
JP4947834B2 (ja) * 1997-11-26 2012-06-06 アプライド マテリアルズ インコーポレイテッド ダメージフリー被覆刻設堆積法
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6110232A (en) * 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US6277199B1 (en) * 1999-01-19 2001-08-21 Applied Materials, Inc. Chamber design for modular manufacturing and flexible onsite servicing
US6086678A (en) * 1999-03-04 2000-07-11 Memc Electronic Materials, Inc. Pressure equalization system for chemical vapor deposition reactors
WO2000057456A1 (en) * 1999-03-19 2000-09-28 Electron Vision Corporation Cluster tool for wafer processing having an electron beam exposure module
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
KR20010019206A (ko) * 1999-08-25 2001-03-15 윤종용 반도체 제조공정에 사용되는 웨이퍼 운송장치
CA2387373A1 (en) * 1999-11-02 2001-06-28 Tokyo Electron Limited Method and apparatus for supercritical processing of a workpiece
US6748960B1 (en) * 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6558509B2 (en) * 1999-11-30 2003-05-06 Applied Materials, Inc. Dual wafer load lock
TW490714B (en) * 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
EP1277233A2 (en) * 2000-04-25 2003-01-22 Tokyo Electron Corporation Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
WO2002009147A2 (en) * 2000-07-26 2002-01-31 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
TW511126B (en) * 2000-09-29 2002-11-21 Applied Materials Inc Apparatus for reducing particle residues in a semiconductor processing chamber
EP1573779A4 (en) * 2001-04-10 2006-11-15 Tokyo Electron Ltd HIGH PRESSURE PROCESSING CHAMBER FOR A SEMICONDUCTOR SUBSTRATE WITH FLOW IMPROVEMENT FEATURES
US6737224B2 (en) 2001-04-17 2004-05-18 Jeffrey Stewart Method of preparing thin supported films by vacuum deposition
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
AU2003215238A1 (en) * 2002-02-15 2003-09-09 Supercritical Systems Inc. Pressure enchanced diaphragm valve
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7309269B2 (en) * 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US20030221620A1 (en) * 2002-06-03 2003-12-04 Semiconductor Energy Laboratory Co., Ltd. Vapor deposition device
US6943066B2 (en) * 2002-06-05 2005-09-13 Advantech Global, Ltd Active matrix backplane for controlling controlled elements and method of manufacture thereof
US20040007325A1 (en) * 2002-06-11 2004-01-15 Applied Materials, Inc. Integrated equipment set for forming a low K dielectric interconnect on a substrate
KR101006938B1 (ko) * 2002-09-20 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조 시스템 및 발광장치 제작방법
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US7021635B2 (en) * 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US7077917B2 (en) * 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7225820B2 (en) * 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7163380B2 (en) * 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US20050034660A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Alignment means for chamber closure to reduce wear on surfaces
US20050035514A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Vacuum chuck apparatus and method for holding a wafer during high pressure processing
US20050067002A1 (en) * 2003-09-25 2005-03-31 Supercritical Systems, Inc. Processing chamber including a circulation loop integrally formed in a chamber housing
US7186093B2 (en) * 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US20060065189A1 (en) * 2004-09-30 2006-03-30 Darko Babic Method and system for homogenization of supercritical fluid in a high pressure processing system
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20070134821A1 (en) * 2004-11-22 2007-06-14 Randhir Thakur Cluster tool for advanced front-end processing
US20070196011A1 (en) * 2004-11-22 2007-08-23 Cox Damon K Integrated vacuum metrology for cluster tool
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US20060134332A1 (en) * 2004-12-22 2006-06-22 Darko Babic Precompressed coating of internal members in a supercritical fluid processing system
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7380984B2 (en) * 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7767145B2 (en) * 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US20060225772A1 (en) * 2005-03-29 2006-10-12 Jones William D Controlled pressure differential in a high-pressure processing chamber
US7494107B2 (en) * 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US7271111B2 (en) * 2005-06-08 2007-09-18 Advantech Global, Ltd Shadow mask deposition of materials using reconfigurable shadow masks
US20070281090A1 (en) * 2006-04-11 2007-12-06 Shinichi Kurita System architecture and method for solar panel formation
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US20080041314A1 (en) * 2006-08-18 2008-02-21 Robert William Bruce Vaccum coater device and mechanism for transporting workpieces in same
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
JP2010538476A (ja) * 2007-08-31 2010-12-09 アプライド マテリアルズ インコーポレイテッド 光電池製造ライン
US20100047954A1 (en) * 2007-08-31 2010-02-25 Su Tzay-Fa Jeff Photovoltaic production line
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090139657A1 (en) * 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US8022372B2 (en) 2008-02-15 2011-09-20 Veeco Instruments Inc. Apparatus and method for batch non-contact material characterization
US20090208668A1 (en) * 2008-02-19 2009-08-20 Soo Young Choi Formation of clean interfacial thin film solar cells
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
TW201039381A (en) * 2009-04-29 2010-11-01 Applied Materials Inc Method of forming in-situ pre-GaN deposition layer in HVPE
WO2011017222A2 (en) * 2009-08-04 2011-02-10 Applied Materials, Inc. Method and apparatus for dry cleaning a cooled showerhead
WO2011031521A2 (en) * 2009-08-27 2011-03-17 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110081771A1 (en) * 2009-10-07 2011-04-07 Applied Materials, Inc. Multichamber split processes for led manufacturing
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
EP2453472A1 (en) * 2010-11-16 2012-05-16 Applied Materials, Inc. Pallet For High Temperature Processing
US9653340B2 (en) 2011-05-31 2017-05-16 Veeco Instruments Inc. Heated wafer carrier profiling
DE102012103295A1 (de) 2012-01-09 2013-07-11 Aixtron Se Räumlich optimierte Anordnung zum Bearbeiten von Halbleitersubstraten
US20160299262A1 (en) * 2013-11-14 2016-10-13 Oerlikon Advanced Technologies Ag Apparatus and process for annealing of anti-fingerprint coatings
CN104073764B (zh) * 2014-06-17 2016-05-18 京东方科技集团股份有限公司 一种用于oled蒸镀的旋转蒸发源装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404661A (en) * 1965-08-26 1968-10-08 Sperry Rand Corp Evaporation system
US3675563A (en) * 1970-01-15 1972-07-11 Ibm Semiconductor processing apparatus
US3829373A (en) * 1973-01-12 1974-08-13 Coulter Information Systems Thin film deposition apparatus using segmented target means
US3884787A (en) * 1973-01-12 1975-05-20 Coulter Information Systems Sputtering method for thin film deposition on a substrate
JPS5315466B2 (es) * 1973-04-28 1978-05-25
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4201152A (en) * 1978-02-27 1980-05-06 Varian Associates, Inc. Transfer and temperature monitoring apparatus
DE2847620C2 (de) * 1978-11-02 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Herstellung von elektrischen Bauelementen, insbesondere Schichtkondensatoren
DE2848480C2 (de) * 1978-11-08 1984-11-08 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Aufbringen von Schichten auf Träger unter Vakuum
FR2498813A1 (fr) * 1981-01-27 1982-07-30 Instruments Sa Installation de traitement de materiaux pour la production de semi-conducteurs
US4433951A (en) * 1981-02-13 1984-02-28 Lam Research Corporation Modular loadlock
JPS58180227A (ja) * 1982-04-17 1983-10-21 Samuko Internatl Kenkyusho:Kk 複数の反応室を備えた能率的プラズマ処理装置
JPS58197262A (ja) * 1982-05-13 1983-11-16 Canon Inc 量産型真空成膜装置及び真空成膜法
JPS605509A (ja) * 1983-06-24 1985-01-12 Hitachi Ltd 分子線エピタキシ装置
US4500407A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Disk or wafer handling and coating system
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron

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AU3629084A (en) 1985-06-13
US4592306A (en) 1986-06-03
ZA849316B (en) 1986-07-30
JPS60167420A (ja) 1985-08-30
ES538257A0 (es) 1985-11-01
GB2150600B (en) 1987-08-12
AU575095B2 (en) 1988-07-21
GB8332394D0 (en) 1984-01-11
EP0144229A3 (en) 1988-07-27
IN163503B (es) 1988-10-01
ES8606816A1 (es) 1985-11-01
GB2150600A (en) 1985-07-03
GB8430313D0 (en) 1985-01-09

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