LU65183A1 - - Google Patents

Info

Publication number
LU65183A1
LU65183A1 LU65183DA LU65183A1 LU 65183 A1 LU65183 A1 LU 65183A1 LU 65183D A LU65183D A LU 65183DA LU 65183 A1 LU65183 A1 LU 65183A1
Authority
LU
Luxembourg
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712119059 external-priority patent/DE2119059C3/de
Application filed filed Critical
Publication of LU65183A1 publication Critical patent/LU65183A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
LU65183D 1971-04-20 1972-04-18 LU65183A1 (cs)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19712119059 DE2119059C3 (de) 1971-04-20 Speicher mit aus M OS-Feldeffekttransistoren aufgebauten Speicherzellen
US00359573A US3848236A (en) 1971-04-20 1973-05-11 Threshold circuit

Publications (1)

Publication Number Publication Date
LU65183A1 true LU65183A1 (cs) 1972-12-11

Family

ID=25760988

Family Applications (1)

Application Number Title Priority Date Filing Date
LU65183D LU65183A1 (cs) 1971-04-20 1972-04-18

Country Status (5)

Country Link
US (2) US3765002A (cs)
FR (1) FR2133892B1 (cs)
GB (1) GB1388601A (cs)
LU (1) LU65183A1 (cs)
NL (1) NL7205270A (cs)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
FR2258783B1 (cs) * 1974-01-25 1977-09-16 Valentin Camille
US3946368A (en) * 1974-12-27 1976-03-23 Intel Corporation System for compensating voltage for a CCD sensing circuit
US3965460A (en) * 1975-01-02 1976-06-22 Motorola, Inc. MOS speed-up circuit
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory
US4150308A (en) * 1977-10-25 1979-04-17 Motorola, Inc. CMOS level shifter
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
DE3072118D1 (en) 1979-12-26 1988-09-22 Toshiba Kk A driver circuit for charge coupled device
US4291392A (en) * 1980-02-06 1981-09-22 Mostek Corporation Timing of active pullup for dynamic semiconductor memory
JPS5837636B2 (ja) * 1980-07-31 1983-08-17 富士通株式会社 半導体記憶装置
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置
JPH0831278B2 (ja) * 1981-03-09 1996-03-27 富士通株式会社 メモリ回路
US4389705A (en) * 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
US4477885A (en) * 1982-01-18 1984-10-16 Fairchild Camera & Instrument Corporation Current dump circuit for bipolar random access memories
JPS5916195A (ja) * 1982-07-19 1984-01-27 Toshiba Corp 半導体記憶装置
JPS59151400A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
JPS6134619A (ja) * 1984-07-26 1986-02-18 Mitsubishi Electric Corp Ｍｏｓトランジスタ回路
US4675846A (en) * 1984-12-17 1987-06-23 International Business Machines Corporation Random access memory
JP2504743B2 (ja) * 1985-03-18 1996-06-05 日本電気株式会社 半導体記憶装置
EP0257912A3 (en) * 1986-08-29 1989-08-23 Kabushiki Kaisha Toshiba Static semiconductor memory device
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
JP2621176B2 (ja) * 1987-05-14 1997-06-18 ソニー株式会社 ワンチツプマイクロコンピユータ
JPH01140496A (ja) * 1987-11-27 1989-06-01 Nec Corp 半導体記憶装置
FR2659165A1 (fr) * 1990-03-05 1991-09-06 Sgs Thomson Microelectronics Memoire ultra-rapide comportant un limiteur de la tension de drain des cellules.
JPH04238197A (ja) * 1991-01-22 1992-08-26 Nec Corp センスアンプ回路
US5412606A (en) * 1994-03-29 1995-05-02 At&T Corp. Memory precharge technique
EP0756285B1 (en) * 1995-07-28 2000-07-05 STMicroelectronics S.r.l. Modulated slope signal generation circuit, particularly for latch data sensing arrangements
DE69531823T2 (de) * 1995-07-28 2004-07-01 Stmicroelectronics S.R.L., Agrate Brianza Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung
TW297126B (en) * 1995-09-13 1997-02-01 Siemens Ag Arrangement of memory cells arranged in the form of a matrix
US6654301B2 (en) 2001-09-27 2003-11-25 Sun Microsystems, Inc. Multiple discharge capable bit line
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase
US7480183B2 (en) * 2006-07-05 2009-01-20 Panasonic Corporation Semiconductor memory device, and read method and read circuit for the same
US7808827B2 (en) * 2007-11-06 2010-10-05 Spansion Llc Controlled bit line discharge for channel erases in nonvolatile memory
US9715345B2 (en) * 2014-04-25 2017-07-25 Micron Technology, Inc. Apparatuses and methods for memory management

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3440444A (en) * 1965-12-30 1969-04-22 Rca Corp Driver-sense circuit arrangement
US3467952A (en) * 1966-02-09 1969-09-16 Nippon Electric Co Field effect transistor information storage circuit
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory

Also Published As

Publication number Publication date
DE2119059A1 (de) 1972-10-26
FR2133892A1 (cs) 1972-12-01
DE2119059B2 (de) 1976-09-23
FR2133892B1 (cs) 1976-10-29
NL7205270A (cs) 1972-10-24
US3848236A (en) 1974-11-12
US3765002A (en) 1973-10-09
GB1388601A (en) 1975-03-26

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