LT2427937T - Didelio našumo paskirstytojo grįžtamojo ryšio (dfb) lazerio diodas su šonine jungtimi - Google Patents

Didelio našumo paskirstytojo grįžtamojo ryšio (dfb) lazerio diodas su šonine jungtimi

Info

Publication number
LT2427937T
LT2427937T LTEP10715901.4T LT10715901T LT2427937T LT 2427937 T LT2427937 T LT 2427937T LT 10715901 T LT10715901 T LT 10715901T LT 2427937 T LT2427937 T LT 2427937T
Authority
LT
Lithuania
Prior art keywords
laserdiode
high output
lateral coupling
output dfb
dfb
Prior art date
Application number
LTEP10715901.4T
Other languages
English (en)
Inventor
Johannes Koeth
Wolfgang Zeller
Original Assignee
Nanoplus Nanosystems And Technologies Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoplus Nanosystems And Technologies Gmbh filed Critical Nanoplus Nanosystems And Technologies Gmbh
Publication of LT2427937T publication Critical patent/LT2427937T/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
LTEP10715901.4T 2009-05-05 2010-05-05 Didelio našumo paskirstytojo grįžtamojo ryšio (dfb) lazerio diodas su šonine jungtimi LT2427937T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009019996A DE102009019996B4 (de) 2009-05-05 2009-05-05 DFB Laserdiode mit lateraler Kopplung für große Ausgangsleistungen
PCT/EP2010/056096 WO2010128077A1 (de) 2009-05-05 2010-05-05 Dfb laserdiode mit lateraler kopplung für grosse ausgangsleistungen

Publications (1)

Publication Number Publication Date
LT2427937T true LT2427937T (lt) 2019-01-10

Family

ID=42235159

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP10715901.4T LT2427937T (lt) 2009-05-05 2010-05-05 Didelio našumo paskirstytojo grįžtamojo ryšio (dfb) lazerio diodas su šonine jungtimi

Country Status (7)

Country Link
US (1) US8855156B2 (lt)
EP (1) EP2427937B1 (lt)
JP (1) JP5717726B2 (lt)
DE (1) DE102009019996B4 (lt)
LT (1) LT2427937T (lt)
PL (1) PL2427937T3 (lt)
WO (1) WO2010128077A1 (lt)

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DE102011002923A1 (de) * 2011-01-20 2012-07-26 Forschungsverbund Berlin E.V. Diodenlaser mit hoher Effizienz
DE102012207339B4 (de) 2012-03-30 2018-08-30 Trumpf Laser Gmbh Pumpstrahlungsanordnung und Verfahren zum Pumpen eines laseraktiven Mediums
EP2815470A1 (en) * 2012-05-30 2014-12-24 EUPhoenix B.V. Tunable semiconductor device and method for making tunable semiconductor device
US9034734B2 (en) * 2013-02-04 2015-05-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies
CN103326243A (zh) * 2013-03-29 2013-09-25 中国科学院半导体研究所 基横模低水平发散角一维啁啾光子晶体边发射激光器阵列
DE102014106209B3 (de) 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement
JP6654468B2 (ja) * 2016-02-29 2020-02-26 日本ルメンタム株式会社 光送信モジュール
JP6581024B2 (ja) * 2016-03-15 2019-09-25 株式会社東芝 分布帰還型半導体レーザ
CN107306011B (zh) * 2016-04-21 2020-02-18 中国科学院半导体研究所 激光器的侧边耦合光栅及其制备方法、包含其的激光器
CN105720479B (zh) * 2016-04-26 2019-03-22 中国科学院半导体研究所 一种具有光束扩散结构的高速半导体激光器
FR3054734B1 (fr) * 2016-07-27 2018-09-07 Universite Paris Sud Diode laser a retroaction repartie
WO2019232261A1 (en) * 2018-05-30 2019-12-05 Nlight, Inc. Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis
CN108919414A (zh) * 2018-07-02 2018-11-30 中国科学院半导体研究所 一种soi平面波导布拉格光栅及制作方法
CN111755949B (zh) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法
JP2021012990A (ja) * 2019-07-09 2021-02-04 住友電気工業株式会社 量子カスケードレーザ
EP3832817A1 (de) * 2019-12-03 2021-06-09 nanoplus Nanosystems and Technologies GmbH Halbleiterlaser sowie verfahren zur herstellung eines halbleiterlasers
CN111370995B (zh) * 2020-03-12 2021-05-18 中国科学院半导体研究所 表面光栅半导体激光器及其制作方法

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CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
JPH1098235A (ja) 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
JPH10144991A (ja) 1996-11-08 1998-05-29 Sony Corp 半導体レーザー
JP3682367B2 (ja) 1998-01-28 2005-08-10 パイオニア株式会社 分布帰還型半導体レーザ
US6795622B2 (en) * 1998-06-24 2004-09-21 The Trustess Of Princeton University Photonic integrated circuits
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
EP0984535B1 (de) 1998-08-31 2005-08-17 Alfred Prof. Dr. Forchel Halbleiterlaser mit Gitterstruktur
JP2001024275A (ja) 1999-07-05 2001-01-26 Hitachi Ltd 光伝送装置
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EP1245971B1 (en) * 2001-03-29 2003-12-17 Interuniversitair Microelektronica Centrum Vzw Waveguide taper with lateral rib confinement waveguides
KR20020077567A (ko) * 2001-04-02 2002-10-12 한국전자통신연구원 광모드 크기 변환기가 결합된 레이저 및 그 제조 방법
JP2003152273A (ja) * 2001-11-08 2003-05-23 Furukawa Electric Co Ltd:The 半導体レーザ素子
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JP4721924B2 (ja) 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP4817255B2 (ja) * 2006-12-14 2011-11-16 富士通株式会社 光半導体素子及びその製造方法

Also Published As

Publication number Publication date
JP5717726B2 (ja) 2015-05-13
WO2010128077A1 (de) 2010-11-11
DE102009019996B4 (de) 2011-09-15
US20120093187A1 (en) 2012-04-19
PL2427937T3 (pl) 2019-03-29
US8855156B2 (en) 2014-10-07
JP2012526375A (ja) 2012-10-25
DE102009019996A1 (de) 2010-12-16
EP2427937A1 (de) 2012-03-14
EP2427937B1 (de) 2018-09-26

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