KR980005936A - 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법 - Google Patents
반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법 Download PDFInfo
- Publication number
- KR980005936A KR980005936A KR1019960026091A KR19960026091A KR980005936A KR 980005936 A KR980005936 A KR 980005936A KR 1019960026091 A KR1019960026091 A KR 1019960026091A KR 19960026091 A KR19960026091 A KR 19960026091A KR 980005936 A KR980005936 A KR 980005936A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive bond
- screening member
- lead frame
- coating method
- chip
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract 6
- 238000000034 method Methods 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000012216 screening Methods 0.000 claims abstract 11
- 238000003825 pressing Methods 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
본 발명은 반도체 제조를 위한 칩 본딩 공정시 전도성 본드가 칩에 균일하게 도포되는 한편, 리드프레임에 본딩되는 칩의 부착강도가 향상될 수 있도록 한 것이다. 이를 위해, 본 발명은 스크리닝 부재(1)에 도포된 전도성 본드(2)가 리드프레임(3)의 칩 부착면(4)에 일치하도록 스크리닝 부재(1)를 리드프레임(3) 상면에 미착시킨 상태에서 가압수단이 스크리닝 부재(1)를 가압함에 따라 스크리닝 부재(1)에 도포된 전도성 본드(2)가 리드 프레임(3)의 칩 부착면(4)으로 옮겨져 코팅되도록 한 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 5 도의 (a) 내지 (d)는 본 발명에 따른 칩 본딩 공정 순서를 나타낸 종단면도.
Claims (5)
- 스크리닝 부재에 도포된 전도성 리드프레임의 칩 부착면에 일치하도록 스크리닝 부재를 리드프레임 상면에 밀착시킨 상태에서 가압수단이 스크리닝 부재를 가압함에 따라 스크리닝 부재에 도포된 전도성 본드가 리드프레임의 칩 부착면으로 옮겨져 코팅 되도록 한 것을 특징으로 하는 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법.
- 제 1 항에 있어서, 상기 스크리닝 부재로서는 실크 스크린 또는 메탈 스크린이 사용되는 것을 특징으로 하는 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법.
- 제 1 항에 있어서, 상기 가압수단으로서는 가압 롤러가 설치되는 것을 특징으로 하는 반도체 제조시의 칩본딩 공정용 전도성 본드 코팅 방법.
- 제 1 항에 있어서, 상기 스크리닝 부재에 도포되는 전도성 본드의 면적이 칩의 면적과 동일한 크기로 형성되는 것을 특징으로 하는 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법.
- 제 1 항에 있어서, 상기 리드 프레임에 코팅되는 전도성 본드의 두께가 스크리닝 부재의 두께에 비례하는 한편 스크리닝 부재의 메시수에 반비례하여 형성되는 것을 특징으로 하는 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026091A KR100198661B1 (ko) | 1996-06-29 | 1996-06-29 | 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026091A KR100198661B1 (ko) | 1996-06-29 | 1996-06-29 | 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR980005936A true KR980005936A (ko) | 1998-03-30 |
KR100198661B1 KR100198661B1 (ko) | 1999-06-15 |
Family
ID=19464907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960026091A KR100198661B1 (ko) | 1996-06-29 | 1996-06-29 | 반도체 제조시의 칩 본딩 공정용 전도성 본드 코팅방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100198661B1 (ko) |
-
1996
- 1996-06-29 KR KR1019960026091A patent/KR100198661B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100198661B1 (ko) | 1999-06-15 |
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