KR980005759A - 반도체 소자의 cmp 후 세정방법 - Google Patents

반도체 소자의 cmp 후 세정방법 Download PDF

Info

Publication number
KR980005759A
KR980005759A KR1019960025230A KR19960025230A KR980005759A KR 980005759 A KR980005759 A KR 980005759A KR 1019960025230 A KR1019960025230 A KR 1019960025230A KR 19960025230 A KR19960025230 A KR 19960025230A KR 980005759 A KR980005759 A KR 980005759A
Authority
KR
South Korea
Prior art keywords
cmp
scrubbing
cleaning
cleaning method
solution
Prior art date
Application number
KR1019960025230A
Other languages
English (en)
Other versions
KR100190054B1 (ko
Inventor
조용준
송재인
박흥수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960025230A priority Critical patent/KR100190054B1/ko
Publication of KR980005759A publication Critical patent/KR980005759A/ko
Application granted granted Critical
Publication of KR100190054B1 publication Critical patent/KR100190054B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

CMP 공정후 인 서튜된 스크러빙 세정 장치에서 HBF4용액을 노즐(nozzle)을 통해 분사시키는 화합적 처리(Chemical Treatment)와 스크러빙(Scrubbing)을 이용한 기계적 처리(Mechanical Treatment)를 병행함으로써, 종래 HF용액에 비해 산화막 식각율이 작아 소비량에 대한 시간조절(time Control)을 효과적으로 할 수 있고, 식각 유니포미티(Etching Uniformity) 및 재현상 측면에서 우수한 효과를 얻을 수 있다.

Description

반도체 소자의 CMP 후 세정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 설명하기 위해 CMP설비와 스크러빙 세정설비에서의 공정순서를 나타낸 단면도.

Claims (1)

  1. 반도체 기판상에 평탄화막을 증착하고 CMP(Chemical Mechanical Polishing;화학기계적 연마)공정으로 평탄화한후 세정방법에 있어서, 상기 반도체 기판을 인시튜(In-situ)로 시트러빙 세정(Scrubbing Cleaning)장치에 로드(Load)하는 단계; 및 상시 스크러빙 세정 장치에 로드된 상기 방도체 기판에 HBF4(Hydroflulboric)용액을 분사하면서 스크러빙 세정하는 단계를 포함하는 것을 특징으로 하는 반도체 소저의 CMP 후 세정(Post CMP Cleaning)방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960025230A 1996-06-28 1996-06-28 반도체 소자의 cmp후 세정방법 KR100190054B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025230A KR100190054B1 (ko) 1996-06-28 1996-06-28 반도체 소자의 cmp후 세정방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025230A KR100190054B1 (ko) 1996-06-28 1996-06-28 반도체 소자의 cmp후 세정방법

Publications (2)

Publication Number Publication Date
KR980005759A true KR980005759A (ko) 1998-03-30
KR100190054B1 KR100190054B1 (ko) 1999-06-01

Family

ID=19464371

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960025230A KR100190054B1 (ko) 1996-06-28 1996-06-28 반도체 소자의 cmp후 세정방법

Country Status (1)

Country Link
KR (1) KR100190054B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196011B2 (en) 2004-01-12 2007-03-27 Samsung Electronics Co., Ltd. Apparatus and method for treating substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196011B2 (en) 2004-01-12 2007-03-27 Samsung Electronics Co., Ltd. Apparatus and method for treating substrates

Also Published As

Publication number Publication date
KR100190054B1 (ko) 1999-06-01

Similar Documents

Publication Publication Date Title
US6423146B1 (en) Method for cleaning a semiconductor substrate
US6324715B1 (en) Apparatus for cleaning semiconductor substrates
US6123865A (en) Method for improving etch uniformity during a wet etching process
US6503333B2 (en) Method for cleaning semiconductor wafers with ozone-containing solvent
DE60043686D1 (de) Verfahren zur Reinigung von Substratoberflächen nach einer Ätzstufe
US6921494B2 (en) Backside etching in a scrubber
US6100198A (en) Post-planarization, pre-oxide removal ozone treatment
KR100207469B1 (ko) 반도체기판의 세정액 및 이를 사용하는 세정방법
US5882425A (en) Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching
JP4220675B2 (ja) Ｈｆ−ｈｆクリーニングのための方法および装置
KR980005759A (ko) 반도체 소자의 cmp 후 세정방법
WO2001024234A3 (en) A method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
JPH0590239A (ja) 洗浄方法及び洗浄装置
JP2000353680A (ja) 半導体ウェーハにインレイドキャパシタを形成する方法および装置
JPH11176791A (ja) 半導体装置の製造方法及び半導体装置の製造装置
JPH09171989A (ja) 半導体基板のウエットエッチング方法
KR100713345B1 (ko) 반도체 소자의 샐로우 트렌치 분리 구조 제조방법
JPS63110639A (ja) 集積回路装置の製造方法
US20020096494A1 (en) Post-cleaning method of a via etching process
KR100199373B1 (ko) 웨이퍼 세정방법
KR19980050047U (ko) 웨이퍼 세척 장치
KR20020053942A (ko) 질산암모늄 용액 버퍼링을 이용한 세정 공정
KR19980075145A (ko) 포스트 cmp 세정장치 및 이를 이용한 세정방법
JPH07122530A (ja) 半導体装置の製造方法
JPH07201791A (ja) ポリッシング後のウェーハ表面洗浄方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20061221

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee