KR980002291A - 플라즈마 cvd에 의한 박막형성방법 - Google Patents

플라즈마 cvd에 의한 박막형성방법 Download PDF

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KR980002291A
KR980002291A KR1019970014668A KR19970014668A KR980002291A KR 980002291 A KR980002291 A KR 980002291A KR 1019970014668 A KR1019970014668 A KR 1019970014668A KR 19970014668 A KR19970014668 A KR 19970014668A KR 980002291 A KR980002291 A KR 980002291A
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plasma
tic1
substrate
generated
gas
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시게루 미즈노
마나부 다가미
신야 하세가와
요이치로 누마자와
마사히토 이시하라
기요시 나시모토
노부유키 다카하시
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니시하라 순지
아네루바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 플라즈마 CVD법에 의한 Ti 막등에 형성에 TiC14를 사용할때, Ti 막등에 잔류하는 염소량을 적제하여 하지층의 침식이 없게 하고 막표면을 평활하게 하여 단차피복성을 높이고, 생산 효율을 향상시켜 소자의 신뢰성을 높게 하는 것을 과제로 한다.
플라즈마 CVD법을 이용한 Ti막 또는 TiN 막의 성막에서, 반응용기내에 H2또는 H2와N2를 도입하여 기판의 전면 공간에 플라즈마를 생성하고, 다음에 반응용기내에 TiC14와 실린계가스(SinH2n+2: n은 자연수)와 H2또는 H2와 N2를 함유하는 반응 가스를 도입한다. 플라즈마중에서 생성되는 실란계가스의 라디칼에 의하여 TiC14또는 TiC14가 분해하여 생성되는 전구체가 환원되어, 기판 위에 Si를 함유하는 Ti막 또는 TiN막이 형성된다.

Description

플라즈마 CVD에 의한 박막형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 박막형성방법을 실시하기 위한 플라즈마 CVD장치의 반응용기내의 구조와 해당 반응용기에 관련한 구성을 도시한 일부 단면 구성도이다.

Claims (8)

  1. 기판을 수용하는 용기내에 H2(수소)를 도입하여 상기 기판의 전면 공간에 풀라즈마를 생성하고, 상기 용기내에 TiCl4(사염화티탄)와 실란계가스(SinH2n+2: n은 자연수)와 H2를 함유하는 반응가스를 도입하고, 상기 플라즈마중에서 생성되는 상기 실란계가스의 라디칼에 의해서 상기 TiCl4또는 TiCl4가 분해하여 생성되는 전구체를 환원시커, 상기 기판 위에 Si(규소)를 함유하는 Ti(티탄)막을 형성하는 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  2. 제1항에 있어서, 상기 플라즈마는 H2로 생성되고, 상기 반응가스는 TiC14와 SiH4와 H2를 함유하는 가스이고, 상기 SiH4와 상기 TiC14와의 유량비(몰비 : [SiH4]/[TiC14]; 기호[]는 가스유량을 나타낸다)가 0.5 이하의 값(0을 제외한다)인 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  3. 제1항에 있어서 상기 Si를 함유하는 상기 Ti 막의 Si 함유율은 49몰% 이하의 값(0을 제외한다)인 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  4. 기판을 수용하는 용기내에 H2(수소) 및 N2(질소)를 도입하여 상기 기판의 전면 공간에 플라즈마를 생성하고, 상기 용기내에 TiCl4(사염화티탄)와 실란계가스(SinH2n+2: n은 자연수)와 H2및 N2를 함유하는 반응가스를 도입하고, 상기 플라즈마중에서 생성되는 상기 실란계가스의 라디칼에 의해서 상기 TiCl4또는 TiCl4가 분해하여 생성되는 전구체를 환원시커, 상기 기판 위에 Si(규소)를 함유하는 TiN(질화티탄)막을 형성하는 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  5. 제4항에 있어서, 상기 플라즈마는 H2 및 N2로 생성되고, 상기 반응가스는 TiC14와 SiH4와 H2및 N2를 함유하는 가스이고, 상기 SiH4와 상기 TiC14와의 유량비(몰비 : [SiH4]/[TiC14]; 기호[]는 가스유량을 나타낸다)가 0.5 이하의 값(0을 제외한다)인 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  6. 제4항에 있어서 상기 Si를 함유하는 상기 TiN 막의 Si 함유율은 20몰% 이하의 값(0을 제외한다)인 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  7. 제1항 또는 제4항에 있어서, 상기 플라즈마는 13.56MHz보다도 높은 주파수의 전력을 사용하여 생성되는 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
  8. 제7항에 있어서,상기 전력의 주파수는 30∼200MHz인 것을 특징으로 하는 플라즈마 CVD에 의한 박막형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970014668A 1996-06-08 1997-04-21 플라즈마 cvd에 의한 박막형성방법 KR100247515B1 (ko)

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JP16818096A JP3851686B2 (ja) 1996-06-08 1996-06-08 プラズマｃｖｄによる薄膜形成方法

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KR100697669B1 (ko) * 2005-12-21 2007-03-20 성균관대학교산학협력단 저유전 플라스마 중합체 박막의 제조 방법 및 이로부터제조된 저유전 박막

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KR100574483B1 (ko) * 1999-12-23 2006-04-27 주식회사 하이닉스반도체 Ｃｖｄ방법에 의한 타이타늄실리나이트라이드막 제조방법
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KR100601024B1 (ko) * 2004-10-13 2006-07-18 주식회사 아이피에스 ＴｉＮ 확산방지막 형성방법
JP5047466B2 (ja) * 2005-03-14 2012-10-10 Ｊｆｅスチール株式会社 被膜密着性に優れた超低鉄損方向性電磁鋼板
JP4640281B2 (ja) * 2006-07-18 2011-03-02 東京エレクトロン株式会社 バリヤメタル層及びその形成方法
JP5872904B2 (ja) * 2012-01-05 2016-03-01 東京エレクトロン株式会社 ＴｉＮ膜の成膜方法および記憶媒体
US9904059B2 (en) 2016-07-08 2018-02-27 Shirley Vetrone Reading aid

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KR940010158B1 (ko) * 1991-07-09 1994-10-22 한국과학기술연구원 플라즈마 화학증착법에 의한 텅스텐 박막 증착방법
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100697669B1 (ko) * 2005-12-21 2007-03-20 성균관대학교산학협력단 저유전 플라스마 중합체 박막의 제조 방법 및 이로부터제조된 저유전 박막

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KR100247515B1 (ko) 2000-04-01
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US5956616A (en) 1999-09-21
JP3851686B2 (ja) 2006-11-29

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