KR970077490A - Manufacturing method of trench isolation film - Google Patents

Manufacturing method of trench isolation film Download PDF

Info

Publication number
KR970077490A
KR970077490A KR1019960017364A KR19960017364A KR970077490A KR 970077490 A KR970077490 A KR 970077490A KR 1019960017364 A KR1019960017364 A KR 1019960017364A KR 19960017364 A KR19960017364 A KR 19960017364A KR 970077490 A KR970077490 A KR 970077490A
Authority
KR
South Korea
Prior art keywords
trench
oxide film
semiconductor substrate
thickness
nitride
Prior art date
Application number
KR1019960017364A
Other languages
Korean (ko)
Inventor
피숭호
조병진
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960017364A priority Critical patent/KR970077490A/en
Publication of KR970077490A publication Critical patent/KR970077490A/en

Links

Abstract

본 발명은 반도체소자의 트렌치 소자분리막 제조방법에 관한 것으로 트렌치 소자분리막과 인접된 반도체기판의 상측 모서리부에서 게이트 산화막이 얇아지거나 집중되는 전기장에 게이트 산화막의 특성이 저하되는 것을 방지하기 위하여 트렌치를 형성하기전에 버즈 빅이 발생되는 필드산화막을 얇은 두께로 형성한 다음, 트렌치를 형성함으로써 트렌치와 인접된 반도체기판의 상측 모서리가 라운드 되도록 트렌치 소자분리막을 형성하는 방법이다.The present invention relates to a method of manufacturing a trench isolation film of a semiconductor device, which comprises forming a trench in an electric field in which an oxide film is thinned or concentrated at an upper corner of a semiconductor substrate adjacent to the trench isolation film, A trench is formed to form a field oxide film in which a burzz is formed before the trench is formed, and then the trench is rounded so that the upper edge of the semiconductor substrate adjacent to the trench is rounded.

Description

트랜치 소자분리막 제조방법Manufacturing method of trench isolation film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도 내지 제8도는 본 발명의 실시예에 의해 트렌치 소자분리막을 형성하는 단계를 도시한 단면도.FIGS. 3 to 8 are cross-sectional views showing steps of forming a trench isolation film according to an embodiment of the present invention.

Claims (6)

반도체기판 상부에 패드 산화막과 질화막을 적층하는 단계와, 트렌치 마스크를 이용하여 트렌치가 형성될 부분에 있는 상기 질화막과 패드 산화막을 식각하여 질화막패턴과 패드 산화막 패턴을 형성하는 단계와, 상기질화막패턴을 마스크로 이용하여 노출되는 반도체기판을 산화시켜 버즈 빅이 발생되는 얇은 두께의 필드 산화막을 형성하는 단계와, 상기 질화막패턴을 하드 마스크로 이용하여 상기 필드산화막과 그 하부의 반도체기판을 식각하여 트렌치를 형성하는 단계와, 전체적으로 산화막을 증착하여 상기 트랜치에 채우는 단계와, 상기 산화막, 질화막패턴과 패드 산화막패턴을 반도체 기판의 상부면까지 제거하여 상기 트렌치에만 산화막이 남은 트렌치 소자분리막을 제조하는 단계를 포함하는 트랜치 소자분리막 제조방법.Depositing a pad oxide film and a nitride film on a semiconductor substrate; etching the nitride film and the pad oxide film in a portion where the trench is to be formed by using a trench mask to form a nitride film pattern and a pad oxide film pattern; Forming a field oxide film having a small thickness in which burrs are generated by oxidizing the exposed semiconductor substrate by using the nitride film pattern as a mask; etching the field oxide film and the semiconductor substrate below the nitride film pattern as a hard mask to form a trench Depositing an oxide film as a whole on the trench and filling the trench; and removing the oxide film, the nitride film pattern and the pad oxide film pattern to an upper surface of the semiconductor substrate, thereby manufacturing a trench isolation film in which an oxide film remains only in the trench Wherein the trenches are formed in a trench. 제1항에 있어서, 반도체기판 상부에 형성하는 패드 산화막의 두께는 70∼300A인 것을 특징으로 하는 트랜치 소자분리막 제조방법.The method according to claim 1, wherein the thickness of the pad oxide film formed on the semiconductor substrate is 70 to 300A. 제1항에 있어서, 상기 질화막의 두께는 1000∼3000A인 것을 특징으로 하는 트랜치 소자분리막 제조방법.The method according to claim 1, wherein the thickness of the nitride layer is 1000 to 3000A. 제1항에 있어서, 상기 필드 산화막은 300∼2000A의 두께로 형성하는 것을 특징으로 하는 트랜치 소자분리막 제조방법.The method as claimed in claim 1, wherein the field oxide film is formed to a thickness of 300 to 2000 A. 제1항에 있어서, 상기 트랜치는 1000∼3000A의 깊이로 형성하는 것을 특징으로 하는 트랜치 소자분리막 제조 방법.The method according to claim 1, wherein the trench is formed at a depth of 1000 to 3000A. 제1항에 있어서, 상기 트렌치를 형성한다음, 식각공정에서 생기는 결함을 제거하기 위해트랜치의 측벽을 70∼300A 두께를 산화시켜 산화막을 형성하는 것을 특징으로 하는 트랜치 소자분리막 제조방법.The method as claimed in claim 1, wherein the trench is formed and then oxidized by oxidizing a sidewall of the trench to a thickness of 70 to 300 A in order to remove defects generated in the etching process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017364A 1996-05-22 1996-05-22 Manufacturing method of trench isolation film KR970077490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017364A KR970077490A (en) 1996-05-22 1996-05-22 Manufacturing method of trench isolation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017364A KR970077490A (en) 1996-05-22 1996-05-22 Manufacturing method of trench isolation film

Publications (1)

Publication Number Publication Date
KR970077490A true KR970077490A (en) 1997-12-12

Family

ID=66219685

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017364A KR970077490A (en) 1996-05-22 1996-05-22 Manufacturing method of trench isolation film

Country Status (1)

Country Link
KR (1) KR970077490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100924194B1 (en) * 2007-09-17 2009-10-29 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100924194B1 (en) * 2007-09-17 2009-10-29 주식회사 하이닉스반도체 Semiconductor device and method for fabricating the same
US8012833B2 (en) 2007-09-17 2011-09-06 Hynix Semiconductor Inc. Semiconductor device and method of fabricating the same

Similar Documents

Publication Publication Date Title
KR960036914A (en) Method for forming a trench isolation structure in an integrated circuit
KR970060447A (en) Isolation method of semiconductor device
KR970030640A (en) Method of forming device isolation film in semiconductor device
KR930022491A (en) How to form recessed oxide insulation
KR950010018A (en) A method for manufacturing a semiconductor device including a semiconductor body having a field insulating area formed by a groove filled with an insulating material
KR970077486A (en) Trench device isolation method of semiconductor device
KR970077490A (en) Manufacturing method of trench isolation film
KR970072304A (en) Device isolation film of semiconductor device and manufacturing method thereof
JPS61201444A (en) Manufacture of semiconductor device
KR980006066A (en) Method of forming an element isolation film of a semiconductor device
KR100237013B1 (en) Method of forming an element field oxide film in a semiconductor device
KR970077773A (en) Trench device isolation method of semiconductor device
KR100396792B1 (en) Method for chemical mechanical polishing isolation region of semiconductor device
KR960026727A (en) Manufacturing method of high frequency semiconductor device
KR980006072A (en) Method for forming an element isolation film of a semiconductor element
KR980006094A (en) Device isolation method of semiconductor device
KR960019654A (en) Field oxide film formation method of semiconductor device
KR970077495A (en) Method of forming field oxide film using trench etching process
KR20040070648A (en) Method for manufacturing sti gap fill margin
KR970060450A (en) Method of separating semiconductor device using trench
KR950021396A (en) Field oxide film manufacturing method
KR980005619A (en) Method of forming a contact hole in a semiconductor device
KR970053428A (en) Device Separation Method of Semiconductor Device
KR970072472A (en) Method for manufacturing semiconductor device
KR980005585A (en) Method for forming a metal layer of a semiconductor

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination