KR970077490A - Manufacturing method of trench isolation film - Google Patents
Manufacturing method of trench isolation film Download PDFInfo
- Publication number
- KR970077490A KR970077490A KR1019960017364A KR19960017364A KR970077490A KR 970077490 A KR970077490 A KR 970077490A KR 1019960017364 A KR1019960017364 A KR 1019960017364A KR 19960017364 A KR19960017364 A KR 19960017364A KR 970077490 A KR970077490 A KR 970077490A
- Authority
- KR
- South Korea
- Prior art keywords
- trench
- oxide film
- semiconductor substrate
- thickness
- nitride
- Prior art date
Links
Abstract
본 발명은 반도체소자의 트렌치 소자분리막 제조방법에 관한 것으로 트렌치 소자분리막과 인접된 반도체기판의 상측 모서리부에서 게이트 산화막이 얇아지거나 집중되는 전기장에 게이트 산화막의 특성이 저하되는 것을 방지하기 위하여 트렌치를 형성하기전에 버즈 빅이 발생되는 필드산화막을 얇은 두께로 형성한 다음, 트렌치를 형성함으로써 트렌치와 인접된 반도체기판의 상측 모서리가 라운드 되도록 트렌치 소자분리막을 형성하는 방법이다.The present invention relates to a method of manufacturing a trench isolation film of a semiconductor device, which comprises forming a trench in an electric field in which an oxide film is thinned or concentrated at an upper corner of a semiconductor substrate adjacent to the trench isolation film, A trench is formed to form a field oxide film in which a burzz is formed before the trench is formed, and then the trench is rounded so that the upper edge of the semiconductor substrate adjacent to the trench is rounded.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도 내지 제8도는 본 발명의 실시예에 의해 트렌치 소자분리막을 형성하는 단계를 도시한 단면도.FIGS. 3 to 8 are cross-sectional views showing steps of forming a trench isolation film according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017364A KR970077490A (en) | 1996-05-22 | 1996-05-22 | Manufacturing method of trench isolation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017364A KR970077490A (en) | 1996-05-22 | 1996-05-22 | Manufacturing method of trench isolation film |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077490A true KR970077490A (en) | 1997-12-12 |
Family
ID=66219685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017364A KR970077490A (en) | 1996-05-22 | 1996-05-22 | Manufacturing method of trench isolation film |
Country Status (1)
Country | Link |
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KR (1) | KR970077490A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100924194B1 (en) * | 2007-09-17 | 2009-10-29 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
-
1996
- 1996-05-22 KR KR1019960017364A patent/KR970077490A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100924194B1 (en) * | 2007-09-17 | 2009-10-29 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
US8012833B2 (en) | 2007-09-17 | 2011-09-06 | Hynix Semiconductor Inc. | Semiconductor device and method of fabricating the same |
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