KR980006094A - Device isolation method of semiconductor device - Google Patents
Device isolation method of semiconductor device Download PDFInfo
- Publication number
- KR980006094A KR980006094A KR1019960025772A KR19960025772A KR980006094A KR 980006094 A KR980006094 A KR 980006094A KR 1019960025772 A KR1019960025772 A KR 1019960025772A KR 19960025772 A KR19960025772 A KR 19960025772A KR 980006094 A KR980006094 A KR 980006094A
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- KR
- South Korea
- Prior art keywords
- nitride film
- oxide
- oxide film
- film
- forming
- Prior art date
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Abstract
본 발명은 반도체소자의 소자분리 방법에 관한 것으로서, 질화막 패턴을 식각마스크로하여 다양한 크기의 폭과 간격을 갖는 트랜치들을 형성하고, 상기 트랜치를 메우는 평탄화되지 않은 산화막을 상기 구조의 전표면에 도포한후, 상기 산화막에 비해 CMP 속도가 느린 산화질화막을 상기 산화막 상에 도포하고, 상기 산화질화막과 산화막을 순차적으로 CMP 방법으로 연마하면 상기 산화질화막이 디슁이나 라운딩을 방지하여 평탄화된 표면을 갖는 소자분리영역을 형성하였으므로, 디슁이나 라운딩이 방지되어 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.The present invention relates to a device isolation method for a semiconductor device, in which trenches having widths and spaces of various sizes are formed using a nitride film pattern as an etching mask, and an un-planarized oxide film covering the trenches is applied to the entire surface of the structure Then, an oxide nitride film having a CMP rate slower than that of the oxide film is applied on the oxide film, and the oxide nitride film and the oxide film are sequentially polished by the CMP method to prevent the oxide nitride film from dishing or rounding, It is possible to prevent dishing or rounding, thereby improving process yield and reliability of device operation.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2a도 내지 제2f도는 본발명에 따른 반도체소자의 소자분리 공정도.Figs. 2a to 2f are diagrams showing a device isolation process of a semiconductor device according to the present invention. Fig.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960025772A KR980006094A (en) | 1996-06-29 | 1996-06-29 | Device isolation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960025772A KR980006094A (en) | 1996-06-29 | 1996-06-29 | Device isolation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR980006094A true KR980006094A (en) | 1998-03-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960025772A KR980006094A (en) | 1996-06-29 | 1996-06-29 | Device isolation method of semiconductor device |
Country Status (1)
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KR (1) | KR980006094A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100475138B1 (en) * | 2002-06-29 | 2005-03-10 | 매그나칩 반도체 유한회사 | Method for Forming Semiconductor Device |
-
1996
- 1996-06-29 KR KR1019960025772A patent/KR980006094A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100475138B1 (en) * | 2002-06-29 | 2005-03-10 | 매그나칩 반도체 유한회사 | Method for Forming Semiconductor Device |
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